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1. general description the 74HC2G34; 74hct2g34 is a high-speed si-gate cmos device. the 74HC2G34; 74hct2g34 provides two buffers. 2. features n wide supply voltage range from 2.0 v to 6.0 v n complies with jedec standard no. 7a n high noise immunity n esd protection: u hbm jesd22-a114-d exceeds 2000 v u mm jesd22-a115-a exceeds 200 v n low power dissipation n balanced propagation delays n unlimited input rise and fall times n multiple package options n speci?ed from - 40 cto+85 c and - 40 c to +125 c 3. ordering information 4. marking 74HC2G34; 74hct2g34 dual buffer gate rev. 01 6 october 2006 product data sheet table 1. ordering information type number package temperature range name description version 74HC2G34gw - 40 c to +125 c sc-88 plastic surface-mounted package; 6 leads sot363 74HC2G34gv - 40 c to +125 c sc-74 plastic surface-mounted package (tsop6); 6 leads sot457 74hct2g34gw - 40 c to +125 c sc-88 plastic surface-mounted package; 6 leads sot363 74hct2g34gv - 40 c to +125 c sc-74 plastic surface-mounted package (tsop6); 6 leads sot457 table 2. marking type number marking code 74HC2G34gw pa 74HC2G34gv p34 74hct2g34gw ua 74hct2g34gv u34
74hc_hct2g34_1 ? nxp b.v. 2006. all rights reserved. product data sheet rev. 01 6 october 2006 2 of 14 nxp semiconductors 74HC2G34; 74hct2g34 dual buffer gate 5. functional diagram 6. pinning information 6.1 pinning 6.2 pin description fig 1. logic symbol fig 2. iec logic symbol fig 3. logic diagram (one gate) mnb063 1a 1y 16 2a 2y 34 1 1 6 mnb064 3 1 4 001aac536 y a fig 4. pin con?guration 74HC2G34 74hct2g34 1a 1y gnd 2a 2y 001aaf303 1 2 3 6 v cc 5 4 table 3. pin description symbol pin description 1a 1 data input gnd 2 ground (0 v) 2a 3 data input 2y 4 data output v cc 5 supply voltage 1y 6 data output
74hc_hct2g34_1 ? nxp b.v. 2006. all rights reserved. product data sheet rev. 01 6 october 2006 3 of 14 nxp semiconductors 74HC2G34; 74hct2g34 dual buffer gate 7. functional description [1] h = high voltage level; l = low voltage level. 8. limiting values [1] the minimum input and output voltage ratings may be exceeded if the input and output current ratings are observed. [2] for sc-88 and sc-74 packages: above 87.5 c the value of p tot derates linearly with 4.0 mw/k. 9. recommended operating conditions table 4. function table [1] input output na ny ll hh table 5. limiting values in accordance with the absolute maximum rating system (iec 60134). voltages are referenced to gnd (ground = 0 v). symbol parameter conditions min max unit v cc supply voltage - 0.5 +7.0 v i ik input clamping current v i < - 0.5 v or v i >v cc + 0.5 v [1] - 20 ma i ok output clamping current v o < - 0.5 v or v o >v cc + 0.5 v [1] - 20 ma i o output current v o = - 0.5 v to v cc + 0.5 v [1] - 25 ma i cc supply current [1] - +50 ma i gnd ground current [1] - - 50 ma t stg storage temperature - 65 +150 c p tot total power dissipation [2] - 250 mw table 6. recommended operating conditions symbol parameter conditions min typ max unit type 74HC2G34 v cc supply voltage 2.0 5.0 6.0 v v i input voltage 0 - v cc v v o output voltage 0 - v cc v t amb ambient temperature - 40 +25 +125 c t r rise time except for schmitt trigger inputs v cc = 2.0 v - - 1000 ns v cc = 4.5 v - - 500 ns v cc = 6.0 v - - 400 ns t f fall time except for schmitt trigger inputs v cc = 2.0 v - - 1000 ns v cc = 4.5 v - - 500 ns v cc = 6.0 v - - 400 ns
74hc_hct2g34_1 ? nxp b.v. 2006. all rights reserved. product data sheet rev. 01 6 october 2006 4 of 14 nxp semiconductors 74HC2G34; 74hct2g34 dual buffer gate 10. static characteristics type 74hct2g34 v cc supply voltage 4.5 5.0 5.5 v v i input voltage 0 - v cc v v o output voltage 0 - v cc v t amb ambient temperature - 40 +25 +125 c t r rise time except for schmitt trigger inputs v cc = 4.5 v - - 500 ns t f fall time except for schmitt trigger inputs v cc = 4.5 v - - 500 ns table 6. recommended operating conditions continued symbol parameter conditions min typ max unit table 7. static characteristics for 74HC2G34 at recommended operating conditions; voltages are referenced to gnd (ground = 0 v). symbol parameter conditions min typ max unit t amb = 25 c v ih high-level input voltage v cc = 2.0 v 1.5 1.2 - v v cc = 4.5 v 3.15 2.4 - v v cc = 6.0 v 4.2 3.2 - v v il low-level input voltage v cc = 2.0 v - 0.8 0.5 v v cc = 4.5 v - 2.1 1.35 v v cc = 6.0 v - 2.8 1.8 v v oh high-level output voltage v i = v ih or v il i o = - 20 m a; v cc = 2.0 v 1.9 2.0 - v i o = - 20 m a; v cc = 4.5 v 4.4 4.5 - v i o = - 20 m a; v cc = 6.0 v 5.9 6.0 - v i o = - 4.0 ma; v cc = 4.5 v 4.18 4.32 - v i o = - 5.2 ma; v cc = 6.0 v 5.68 5.81 - v v ol low-level output voltage v i = v ih or v il i o = 20 m a; v cc = 2.0 v - 0 0.1 v i o = 20 m a; v cc = 4.5 v - 0 0.1 v i o = 20 m a; v cc = 6.0 v - 0 0.1 v i o = 4.0 ma; v cc = 4.5 v - 0.15 0.26 v i o = 5.2 ma; v cc = 6.0 v - 0.16 0.26 v i i input leakage current v i = gnd or v cc ; v cc = 6.0 v - - 0.1 m a i cc supply current v i = gnd or v cc ; i o = 0 a; v cc = 6.0 v - - 1.0 m a c i input capacitance - 1.5 - pf
74hc_hct2g34_1 ? nxp b.v. 2006. all rights reserved. product data sheet rev. 01 6 october 2006 5 of 14 nxp semiconductors 74HC2G34; 74hct2g34 dual buffer gate t amb = - 40 c to +85 c v ih high-level input voltage v cc = 2.0 v 1.5 - - v v cc = 4.5 v 3.15 - - v v cc = 6.0 v 4.2 - - v v il low-level input voltage v cc = 2.0 v - - 0.5 v v cc = 4.5 v - - 1.35 v v cc = 6.0 v - - 1.8 v v oh high-level output voltage v i = v ih or v il i o = - 20 m a; v cc = 2.0 v 1.9 - - v i o = - 20 m a; v cc = 4.5 v 4.4 - - v i o = - 20 m a; v cc = 6.0 v 5.9 - - v i o = - 4.0 ma; v cc = 4.5 v 4.13 - - v i o = - 5.2 ma; v cc = 6.0 v 5.63 - - v v ol low-level output voltage v i = v ih or v il i o = 20 m a; v cc = 2.0 v - - 0.1 v i o = 20 m a; v cc = 4.5 v - - 0.1 v i o = 20 m a; v cc = 6.0 v - - 0.1 v i o = 4.0 ma; v cc = 4.5 v - - 0.33 v i o = 5.2 ma; v cc = 6.0 v - - 0.33 v i i input leakage current v i = gnd or v cc ; v cc = 6.0 v - - 1.0 m a i cc supply current v i = gnd or v cc ; i o = 0 a; v cc = 6.0 v - - 10.0 m a t amb = - 40 c to +125 c v ih high-level input voltage v cc = 2.0 v 1.5 - - v v cc = 4.5 v 3.15 - - v v cc = 6.0 v 4.2 - - v v il low-level input voltage v cc = 2.0 v - - 0.5 v v cc = 4.5 v - - 1.35 v v cc = 6.0 v - - 1.8 v v oh high-level output voltage v i = v ih or v il i o = - 20 m a; v cc = 2.0 v 1.9 - - v i o = - 20 m a; v cc = 4.5 v 4.4 - - v i o = - 20 m a; v cc = 6.0 v 5.9 - - v i o = - 4.0 ma; v cc = 4.5 v 3.7 - - v i o = - 5.2 ma; v cc = 6.0 v 5.2 - - v table 7. static characteristics for 74HC2G34 continued at recommended operating conditions; voltages are referenced to gnd (ground = 0 v). symbol parameter conditions min typ max unit
74hc_hct2g34_1 ? nxp b.v. 2006. all rights reserved. product data sheet rev. 01 6 october 2006 6 of 14 nxp semiconductors 74HC2G34; 74hct2g34 dual buffer gate v ol low-level output voltage v i = v ih or v il i o = 20 m a; v cc = 2.0 v - - 0.1 v i o = 20 m a; v cc = 4.5 v - - 0.1 v i o = 20 m a; v cc = 6.0 v - - 0.1 v i o = 4.0 ma; v cc = 4.5 v - - 0.4 v i o = 5.2 ma; v cc = 6.0 v - - 0.4 v i i input leakage current v i = gnd or v cc ; v cc = 6.0 v - - 1.0 m a i cc supply current v i = gnd or v cc ; i o = 0 a; v cc = 6.0 v - - 20.0 m a table 7. static characteristics for 74HC2G34 continued at recommended operating conditions; voltages are referenced to gnd (ground = 0 v). symbol parameter conditions min typ max unit table 8. static characteristics for 74hct2g34 at recommended operating conditions; voltages are referenced to gnd (ground = 0 v). symbol parameter conditions min typ max unit t amb = 25 c v ih high-level input voltage v cc = 4.5 v to 5.5 v 2.0 1.6 - v v il low-level input voltage v cc = 4.5 v to 5.5 v - 1.2 0.8 v v oh high-level output voltage v i = v ih or v il i o = - 20 m a; v cc = 4.5 v 4.4 4.5 - v i o = - 4.0 ma; v cc = 4.5 v 4.18 4.32 - v v ol low-level output voltage v i = v ih or v il i o = 20 m a; v cc = 4.5 v - 0 0.1 v i o = 4.0 ma; v cc = 4.5 v - 0.15 0.26 v i i input leakage current v i = gnd or v cc ; v cc = 5.5 v - - 0.1 m a i cc supply current v i = gnd or v cc ; i o = 0 a; v cc = 5.5 v - - 1.0 m a d i cc additional supply current v i = v cc - 2.1 v; v cc = 4.5 v to 5.5 v; i o = 0 a - - 300 m a c i input capacitance - 1.5 - pf t amb = - 40 c to +85 c v ih high-level input voltage v cc = 4.5 v to 5.5 v 2.0 - - v v il low-level input voltage v cc = 4.5 v to 5.5 v - - 0.8 v v oh high-level output voltage v i = v ih or v il i o = - 20 m a; v cc = 4.5 v 4.4 - - v i o = - 4.0 ma; v cc = 4.5 v 4.13 - - v v ol low-level output voltage v i = v ih or v il i o = 20 m a; v cc = 4.5 v - - 0.1 v i o = 4.0 ma; v cc = 4.5 v - - 0.33 v i i input leakage current v i = gnd or v cc ; v cc = 5.5 v - - 1.0 m a i cc supply current v i = gnd or v cc ; i o = 0 a; v cc = 5.5 v - - 10.0 m a d i cc additional supply current v i = v cc - 2.1 v; v cc = 4.5 v to 5.5 v; i o = 0 a - - 375 m a
74hc_hct2g34_1 ? nxp b.v. 2006. all rights reserved. product data sheet rev. 01 6 october 2006 7 of 14 nxp semiconductors 74HC2G34; 74hct2g34 dual buffer gate 11. dynamic characteristics t amb = - 40 c to +125 c v ih high-level input voltage v cc = 4.5 v to 5.5 v 2.0 - - v v il low-level input voltage v cc = 4.5 v to 5.5 v - - 0.8 v v oh high-level output voltage v i = v ih or v il i o = - 20 m a; v cc = 4.5 v 4.4 - - v i o = - 4.0 ma; v cc = 4.5 v 3.7 - - v v ol low-level output voltage v i = v ih or v il i o = 20 m a; v cc = 4.5 v - - 0.1 v i o = 4.0 ma; v cc = 4.5 v - - 0.4 v i i input leakage current v i = gnd or v cc ; v cc = 5.5 v - - 1.0 m a i cc supply current v i = gnd or v cc ; i o = 0 a; v cc = 5.5 v - - 20.0 m a d i cc additional supply current v i = v cc - 2.1 v; v cc = 4.5 v to 5.5 v; i o = 0 a - - 410 m a table 8. static characteristics for 74hct2g34 continued at recommended operating conditions; voltages are referenced to gnd (ground = 0 v). symbol parameter conditions min typ max unit table 9. dynamic characteristics voltages are referenced to gnd (groun d = 0 v); for test circuit see figure 6 . symbol parameter conditions 25 c - 40 c to +125 c unit min typ max min max (85 c) max (125 c) 74HC2G34 t pd propagation delay na to ny; see figure 5 [1] v cc = 2.0 v; c l = 50 pf - 29 75 - 95 125 ns v cc = 4.5 v; c l = 50 pf - 9 15 - 19 25 ns v cc = 6.0 v; c l = 50 pf - 8 13 - 16 20 ns t t transition time ny; see figure 5 [2] v cc = 2.0 v; c l = 50 pf - 18 75 - 95 125 ns v cc = 4.5 v; c l = 50 pf - 6 15 - 19 25 ns v cc = 6.0 v; c l = 50 pf - 5 13 - 16 20 ns c pd power dissipation capacitance v i = gnd to v cc [3] -10- - - -pf
74hc_hct2g34_1 ? nxp b.v. 2006. all rights reserved. product data sheet rev. 01 6 october 2006 8 of 14 nxp semiconductors 74HC2G34; 74hct2g34 dual buffer gate [1] t pd is the same as t plh and t phl [2] t t is the same as t tlh and t thl [3] c pd is used to determine the dynamic power dissipation (p d in m w). p d =c pd v cc 2 f i n+ s (c l v cc 2 f o ) where: f i = input frequency in mhz; f o = output frequency in mhz; c l = output load capacitance in pf; v cc = supply voltage in v; n = number of inputs switching; s (c l v cc 2 f o ) = sum of the outputs. 12. waveforms 74hct2g34 t pd propagation delay na to ny; see figure 5 [1] v cc = 4.5 v; c l = 50 pf - 10 18 - 23 29 ns t t transition time ny; see figure 5 [2] v cc = 4.5 v; c l = 50 pf - 6 15 - 19 25 ns c pd power dissipation capacitance v i = gnd to v cc - 1.5 v [3] -9- - - -pf table 9. dynamic characteristics continued voltages are referenced to gnd (groun d = 0 v); for test circuit see figure 6 . symbol parameter conditions 25 c - 40 c to +125 c unit min typ max min max (85 c) max (125 c) measurement points are given in t ab le 10 . v ol and v oh are typical voltage output drop that occur with the output load. fig 5. the data input (na) to output (ny) propagation delays and output transition times 001aaf302 v i na input t plh v m 90 % 90 % 10 % 10 % v m t phl t tlh t thl gnd v oh ny output v ol table 10. measurement points type input output v m v i t r = t f v m 74HC2G34 0.5v cc gnd to v cc 6.0 ns 0.5v cc 74hct2g34 1.3 v gnd to 3.0 v 6.0 ns 1.3 v
74hc_hct2g34_1 ? nxp b.v. 2006. all rights reserved. product data sheet rev. 01 6 october 2006 9 of 14 nxp semiconductors 74HC2G34; 74hct2g34 dual buffer gate test data is given in t ab le 11 . de?nitions test circuit: r l = load resistance. c l = load capacitance including jig and probe capacitance. r t = termination resistance should be equal to output impedance z o of the pulse generator. fig 6. load circuitry for switching times mgk563 d.u.t v cc v cc v i v o r t r l = 1 k w c l 50 pf open pulse generator table 11. test data type input test v i t r , t f t phl , t plh 74HC2G34 gnd to v cc 6 ns open 74hct2g34 gnd to 3.0 v 6 ns open
74hc_hct2g34_1 ? nxp b.v. 2006. all rights reserved. product data sheet rev. 01 6 october 2006 10 of 14 nxp semiconductors 74HC2G34; 74hct2g34 dual buffer gate 13. package outline fig 7. package outline sot363 (sc-88) references outline version european projection issue date iec jedec jeita sot363 sc-88 wb m b p d e 1 e pin 1 index a a 1 l p q detail x h e e v m a a b y 0 1 2 mm scale c x 13 2 4 5 6 plastic surface-mounted package; 6 leads sot363 unit a 1 max b p cd e e 1 h e l p qy w v mm 0.1 0.30 0.20 2.2 1.8 0.25 0.10 1.35 1.15 0.65 e 1.3 2.2 2.0 0.2 0.1 0.2 dimensions (mm are the original dimensions) 0.45 0.15 0.25 0.15 a 1.1 0.8 04-11-08 06-03-16
74hc_hct2g34_1 ? nxp b.v. 2006. all rights reserved. product data sheet rev. 01 6 october 2006 11 of 14 nxp semiconductors 74HC2G34; 74hct2g34 dual buffer gate fig 8. package outline sot457 (sc-74) references outline version european projection issue date iec jedec jeita sot457 sc-74 wb m b p d e pin 1 index a a 1 l p q detail x h e e v m a a b y scale c x 13 2 4 5 6 0 1 2 mm plastic surface-mounted package (tsop6); 6 leads sot457 unit a 1 b p cd e h e l p qy w v mm 0.1 0.013 0.40 0.25 3.1 2.7 0.26 0.10 1.7 1.3 e 0.95 3.0 2.5 0.2 0.1 0.2 dimensions (mm are the original dimensions) 0.6 0.2 0.33 0.23 a 1.1 0.9 05-11-07 06-03-16
74hc_hct2g34_1 ? nxp b.v. 2006. all rights reserved. product data sheet rev. 01 6 october 2006 12 of 14 nxp semiconductors 74HC2G34; 74hct2g34 dual buffer gate 14. abbreviations 15. revision history table 12. abbreviations acronym description cmos complementary metal oxide semiconductor esd electrostatic discharge hbm human body model mm machine model dut device under test table 13. revision history document id release date data sheet status change notice supersedes 74hc_hct2g34_1 20061006 product data sheet - -
74hc_hct2g34_1 ? nxp b.v. 2006. all rights reserved. product data sheet rev. 01 6 october 2006 13 of 14 nxp semiconductors 74HC2G34; 74hct2g34 dual buffer gate 16. legal information 16.1 data sheet status [1] please consult the most recently issued document before initiating or completing a design. [2] the term short data sheet is explained in section de?nitions. [3] the product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple dev ices. the latest product status information is available on the internet at url http://www .nxp .com . 16.2 de?nitions draft the document is a draft version only. the content is still under internal review and subject to formal approval, which may result in modi?cations or additions. nxp semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. short data sheet a short data sheet is an extract from a full data sheet with the same product type number(s) and title. a short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. for detailed and full information see the relevant full data sheet, which is available on request via the local nxp semiconductors sales of?ce. in case of any inconsistency or con?ict with the short data sheet, the full data sheet shall prevail. 16.3 disclaimers general information in this document is believed to be accurate and reliable. however, nxp semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. right to make changes nxp semiconductors reserves the right to make changes to information published in this document, including without limitation speci?cations and product descriptions, at any time and without notice. this document supersedes and replaces all information supplied prior to the publication hereof. suitability for use nxp semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of a nxp semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. nxp semiconductors accepts no liability for inclusion and/or use of nxp semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customers own risk. applications applications that are described herein for any of these products are for illustrative purposes only. nxp semiconductors makes no representation or warranty that such applications will be suitable for the speci?ed use without further testing or modi?cation. limiting values stress above one or more limiting values (as de?ned in the absolute maximum ratings system of iec 60134) may cause permanent damage to the device. limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the characteristics sections of this document is not implied. exposure to limiting values for extended periods may affect device reliability. terms and conditions of sale nxp semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www .nxp .com/pro? le/ter ms , including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by nxp semiconductors. in case of any inconsistency or con?ict between information in this document and such terms and conditions, the latter will prevail. no offer to sell or license nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. 16.4 trademarks notice: all referenced brands, product names, service names and trademarks are the property of their respective owners. 17. contact information for additional information, please visit: http://www .nxp.com for sales of?ce addresses, send an email to: salesad dresses@nxp.com document status [1] [2] product status [3] de?nition objective [short] data sheet development this document contains data from the objective speci?cation for product development. preliminary [short] data sheet quali?cation this document contains data from the preliminary speci?cation. product [short] data sheet production this document contains the product speci?cation.
nxp semiconductors 74HC2G34; 74hct2g34 dual buffer gate ? nxp b.v. 2006. all rights reserved. for more information, please visit: http://www.nxp.com for sales office addresses, please send an email to: salesaddresses@nxp.com date of release: 6 october 2006 document identifier: 74hc_hct2g34_1 please be aware that important notices concerning this document and the product(s) described herein, have been included in section legal information. 18. contents 1 general description . . . . . . . . . . . . . . . . . . . . . . 1 2 features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 3 ordering information . . . . . . . . . . . . . . . . . . . . . 1 4 marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 5 functional diagram . . . . . . . . . . . . . . . . . . . . . . 2 6 pinning information . . . . . . . . . . . . . . . . . . . . . . 2 6.1 pinning . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 6.2 pin description . . . . . . . . . . . . . . . . . . . . . . . . . 2 7 functional description . . . . . . . . . . . . . . . . . . . 3 8 limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3 9 recommended operating conditions. . . . . . . . 3 10 static characteristics. . . . . . . . . . . . . . . . . . . . . 4 11 dynamic characteristics . . . . . . . . . . . . . . . . . . 7 12 waveforms . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 13 package outline . . . . . . . . . . . . . . . . . . . . . . . . 10 14 abbreviations . . . . . . . . . . . . . . . . . . . . . . . . . . 12 15 revision history . . . . . . . . . . . . . . . . . . . . . . . . 12 16 legal information. . . . . . . . . . . . . . . . . . . . . . . 13 16.1 data sheet status . . . . . . . . . . . . . . . . . . . . . . 13 16.2 de?nitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 16.3 disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 16.4 trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 17 contact information. . . . . . . . . . . . . . . . . . . . . 13 18 contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14

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