CTLDM7181-M832D surface mount n-channel and p-channel enhancement-mode complementary silicon mosfets description: the central semiconductor CTLDM7181-M832D is a dual complementary n-channel and p-channel enhancement-mode mosfet, designed for high speed pulsed amplifier and driver applications. these mosfets offer low r ds(on) and low threshold voltages. marking code: cfk features: ? dual complementary mosfets ? low r ds(on) ? high current ? logic level compatibility applications: ? switching circuits ? dc - dc converters ? battery powered portable devices notes: (1) fr-4 epoxy pcb with copper mounting pad area of 54mm 2 . maximum ratings: (t a =25c) symbol n-ch (q1) p-ch (q2) units drain-source voltage v ds 20 20 v gate-source voltage v gs 8.0 8.0 v continuous drain current (steady state) i d 1.0 0.86 a continuous drain current, t<5.0s i d - 0.95 a continuous source current (body diode) i s - 0.36 a maximum pulsed drain current, tp=10s i dm 4.0 4.0 a maximum pulsed source current, tp=10s i sm - 4.0 a power dissipation (note 1) p d 1.65 w operating and storage junction temperature t j, t stg -65 to +150 c thermal resistance (note 1) ja 76 c/w electrical characteristics: (t a =25c) n-ch (q1) p-ch (q2) symbol test conditions min typ max min typ max units i gssf , i gssr v gs =8.0v, v ds =0 - - 10 - .001 .05 a i dss v ds =20v, v gs =0 - - 10 - .005 0.5 a bv dss v gs =0, i d =250a 20 - - 20 24 - v v gs(th) v ds =10v, i d =1.0ma 0.5 - 1.2 - - - v v gs(th) v ds =v gs, i d =250a - - - 0.45 0.76 1.0 v v sd v gs =0, i s =1.0a - - 1.1 - - - v v sd v gs =0, i s =360ma - - - - - 0.9 v r ds(on) v gs =4.5v, i d =0.5a - .075 0.10 - - - r ds(on) v gs =4.5v, i d =0.95a - - - - .085 0.15 r ds(on) v gs =2.5v, i d =0.5a - 0.10 0.14 - - - r ds(on) v gs =4.5v, i d =0.77a - - - - .085 0.142 r ds(on) v gs =1.5v, i d =0.1a - 0.17 0.25 - - - r ds(on) v gs =2.5v, i d =0.67a - - - - 0.13 0.20 r ds(on) v gs =1.8v, i d =0.2a - - - - 0.19 0.24 q g(tot) v ds =10v, v gs =4.5v, i d =1.0a - 2.4 - - 3.56 - nc q gs v ds =10v, v gs =4.5v, i d =1.0a - 0.25 - - 0.36 - nc q gd v ds =10v, v gs =4.5v, i d =1.0a - 0.65 - - 1.52 - nc tlm832d case r2 (2-august 2011) www.centralsemi.com ? device is halogen free by design
CTLDM7181-M832D surface mount n-channel and p-channel enhancement-mode complementary silicon mosfets lead code: 1) gate q1 2) source q1 3) gate q2 4) source q2 5) drain q2 6) drain q2 7) drain q1 8) drain q1 marking code: cfk pin configuration electrical characteristics - continued: n-ch (q1) p-ch (q2) symbol test conditions typ min typ units g fs v ds =10v, i d =0.5a 4.2 - - s g fs v ds =10v, i d =810ma - 2.0 - s c rss v ds =10v, v gs =0, f=1.0mhz 45 - - pf c rss v ds =16v, v gs =0, f=1.0mhz - - 80 pf c iss v ds =10v, v gs =0, f=1.0mhz 220 - - pf c iss v ds =16v, v gs =0, f=1.0mhz - - 200 pf c oss v ds =10v, v gs =0, f=1.0mhz 120 - - pf c oss v ds =16v, v gs =0, f=1.0mhz - - 60 pf t on v dd =10v, v gs =5.0v, i d =0.5a 25 - - ns t on v dd =10v, v gs =4.5v, i d =950ma, r g =6.0 - - 20 ns t off v dd =10v, v gs =5.0v, i d =0.5a 140 - - ns t off v dd =10v, v gs =4.5v, i d =950ma, r g =6.0 - - 25 ns tlm832d case - mechanical outline www.centralsemi.com r2 (2-august 2011)
|
