savantic semiconductor product specification silicon npn power transistors MJE16004 description with to-220 package high voltage ,high speed applications switching regulators high resolution deflection circuits inverters motor drives pinning pin description 1 base 2 collector 3 emitter absolute maximum ratings(t c =25 ) symbol parameter conditions value unit v cbo collector-base voltage open emitter 850 v v ceo collector-emitter voltage open base 450 v v ebo emitter-base voltage open collector 6 v i c collector current (dc) 5 a i cm collector current-peak 10 a i b base current 4 a i bm base current-peak 8 a p d total power dissipation t c =25 80 w t j junction temperature 150 t stg storage temperature -65~150 thermal characteristics symbol parameter max unit r th j-c thermal resistance junction to case 1.56 /w
savantic semiconductor product specification 2 silicon npn power transistors MJE16004 characteristics tj=25 unless otherwise specified symbol parameter conditions min typ. max unit v ceo(sus) collector-emitter sustaining voltage i c =100ma; i b =0 450 v v ce (sat) -1 collector-emitter saturation voltage i c =1.5a ;i b =0.15a 1.0 v v ce (sat) -2 collector-emitter saturation voltage i c =3a ;i b =0.3a t c =100 2.5 2.5 v v be (sat) base-emitter saturation voltage i c =3a ;i b =0.3a t c =100 1.5 1.5 v i cev collector cut-off current v cev =850v; v be =1.5v t c =100 0.25 1.5 ma i ebo emitter cut-off current v eb =6v; i c =0 1.0 ma h fe dc current gain i c =5a ; v ce =5v 7 c ob collector outoput capacitance i e =0 ; v cb =10v;f=1.0khz 200 pf switching times resistive load,duty cycle @ 2.0%,pulse width=30s t d delay time 0.1 s t r rise time 0.3 s t s storage time 2.7 s t f fall time v cc =250v ,i c =3a i b1 =0.3a; i b2 =0.6a 0.35 s
savantic semiconductor product specification 3 silicon npn power transistors MJE16004 package outline fig.2 outline dimensions (unindicated tolerance: 0.10mm)
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