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c opyright ruichips semiconductor co . , ltd rev. a C j an ., 2010 www. ruichips .com ru 61 99 n - channel advanced power mosfet features pin description absolute maximum ratings 6 0 v/ 20 0 a r ds ( on ) = 2.8 m w ( typ.) @ v gs = 10 v avalanche rated reliable and rugge d lead free and green devices available applications automotive applications and a wide variety of other applications high efficiency synchronous in smps high speed power switching symbol parameter rating unit common ratings ( t a =25c unless otherwise noted) v dss drain - source voltage 60 v gss gate - source voltage 25 v t j maximum junction temperature 175 c t stg storage temperature range - 55 to 175 c i s diode continuous forward current t c =25c 200 a mounted on large heat sink i dp 300 m s pulsed drain current tested t c = 25 c 80 0 t c =25c 200 i d continue drain current t c = 100 c 140 a t c =25c 380 p d maximum power dissipation t c = 100 c 220 w r q jc thermal resistance - junction to case 0.45 r q j a thermal resistance - junction to ambient 62.5 c/w drain - source aval anche ratings storage temperature range - 55 to 150 e as avalanche energy , single pulsed 1500 mj to - 220 to - 220f to - 263 to - 247 n - channel mosfe t
c opyright ruichips semiconductor co . , ltd rev. a C j an ., 2010 2 www. ruichips .com ru61 99 electrical characteristics ( t a =25 c unless otherwise noted) ru 61 99 symbol parameter test condition min. typ. max. unit static characteristics bv dss drain - source breakdown voltage v gs =0v, i ds = 250 m a 6 0 v v ds = 60 v, v gs =0v 1 i dss zero gate voltage drain current t j =85 c 30 m a v gs ( th) gate threshold voltage v ds =v gs , i ds = 250 m a 2 3 4 v i gss gate leakage current v gs = 25 v, v ds =0v 10 0 n a r ds ( on ) drain - source on - state resistance v gs = 10 v, i ds = 4 0 a 2.8 3.5 m w notes : pulse width limited by safe operating area. current limited by package( limitation current is 75a ) pulse test ; p ulse width 3 00 m s, duty cycle 2% . guaranteed by design, not subject to producti on testing . d iode characteristics v sd diode forward voltage i sd = 40 a, v gs =0v 0.8 1.3 v t rr reverse recovery time 75 ns q rr reverse recovery charge i sd = 40 a, dl sd /dt=100a/ m s 15 0 nc dynamic characteristics r g gate resistance v gs = 0 v,v ds =0v ,f=1mhz 1.4 w c iss input capacitance 58 00 c oss output capacitance 15 00 c rss reverse transfer capacitance v gs =0v, v ds = 30 v, frequency=1.0mhz 490 pf t d ( on ) turn - on delay time 22 41 t r turn - on rise time 38 70 t d ( off ) turn - off delay time 75 140 t f turn - off fall time v dd = 35 v, r l = 3 5 w , i ds = 1a, v gen = 10v, r g =6 w 120 210 ns gate charge characteristics q g total gate charge 15 5 2 20 q gs gate - source charge 45 q gd gate - drain charge v ds = 30 v, v gs = 10v, i ds = 40 a 48 nc
c opyright ruichips semiconductor co . , ltd rev. a C j an ., 2010 3 www. ruichips .com ru61 99 typical characteristics power dissipation drain current ptot - power (w) i d - drain current (a) tj - junction temperature (c) t j - junction temperature ( c) safe operation area thermal transient impedance i d - drain current (a) normalized effective transient v ds - drain - source voltage (v) square wave pulse duration ( sec)
c opyright ruichips semiconductor co . , ltd rev. a C j an ., 2010 4 www. ruichips .com ru61 99 typical characteristics output characteristics drain - source on resista nce i d - drain current (a) r ds(on) - on resistance ( m ) v ds - drain - source voltage (v) i d - drain current (a) drain - source on resistance gate threshold voltage rds(on) - on - resistance ( m r ) normalize d threshold vlotage vgs - gate - source voltage (v) tj - junction temperature (c)
c opyright ruichips semiconductor co . , ltd rev. a C j an ., 2010 5 www. ruichips .com ru61 99 typical characteristics drain - source on resistance source - drain diode forward normalized on resistance i s - source cu rrent (a) t j - junction temperature (c) v sd - source - drain voltage (v) capacitance gate charge c - capacitance ( pf ) v gs - gate - source voltage (v) v ds - drain - source voltage (v) q g - gate charge (nc) r on @t=25 o c: 2.8 m
c opyright ruichips semiconductor co . , ltd rev. a C j an ., 2010 6 www. ruichips .com ru61 99 avalanche test circuit and waveforms switching time test circuit and waveforms
c opyright ruichips semiconductor co . , ltd rev. a C j an ., 2010 7 www. ruichips .com ru61 99 ordering and marking information ru 6199 package (available) q:to - 247 ; r: t o - 220 ; s: to - 263 ; p: to - 220f operating temperature range c : - 55 to 175 oc assembly material g : green & lead free device packaging t : tube tr : tape & reel
c opyright ruichips semiconductor co . , ltd rev. a C j an ., 2010 8 www. ruichips .com ru61 99 package information to - 220fb - 3l all dimensions refer to jedec standard do not include mold flash or protrusions mm inch mm inch symbol min nom max min nom max symbol min nom max min nom max a 4.40 4.57 4.70 0.173 0.180 0.185 ?p1 1.40 1.50 1.60 0.055 0.059 0.063 a1 1.27 1.30 1.33 0.050 0.051 0.052 e 2.54bsc 0.1bsc a2 2.35 2.40 2.50 0.093 0.094 0.098 e1 5.08bsc 0.2bsc b 0.77 - 0.90 0.030 - 0.035 h1 6.40 6.50 6.60 0.252 0.256 0.260 b2 1.23 - 1.36 0.048 - 0.054 l 12.75 - 13.17 0.502 - 0.519 c 0.48 0.50 0.52 0.019 0.020 0.021 l1 - - 3.95 - - 0.156 d 15.40 15.60 15.80 0.606 0.614 0.622 l2 2.50ref . 0.098ref . d1 9.00 9.10 9.20 0.354 0.358 0.362 ?p 3.57 3.60 3.63 0.141 0.142 0.143 dep 0.05 0.10 0.20 0.002 0.004 0.008 q 2.73 2.80 2.87 0.107 0.110 0.113 e 9.70 9.90 10.10 0.382 0.389 0.398 1 5 7 9 5 7 9 e 1 - 8.70 - - 0.343 - 2 1 3 5 1 3 5 e 2 9.80 10.00 10.20 0.386 0.394 0.401
c opyright ruichips semiconductor co . , ltd rev. a C j an ., 2010 9 www. ruichips .com ru61 99 to - 263 - 2l all dimensions refer to jedec standard do not include mold flash or protrusions mm inch mm inch symbol min nom max min nom max symbol min nom max min nom max a 4.40 4.57 4.70 0.173 0.180 0.185 l 2.00 2.30 2.60 0.079 0.090 0.102 a1 0 0.10 0.25 0 0.004 0.010 l3 1.17 1.27 1.40 0.046 0.050 0.055 a2 2.59 2.69 2.79 0.102 0.106 0.110 l1 - - 1.70 - - 0.067 b 0.77 - 0.90 0.030 - 0.035 l4 0.25bsc 0.01bsc b1 1.23 - 1.36 0.048 - 0.052 l 2 2.50ref. 0.098ref. c 0.34 - 0. 47 0.013 - 0.019 0 - 8 0 - 8 c1 1.22 - 1.32 0.048 - 0.052 1 5 7 9 5 7 9 d 8.60 8.70 8.80 0.338 0.343 0.346 2 1 3 5 1 3 5 e 10.00 10.16 10.26 0.394 0.4 0.404 dep 0.05 0.10 0.20 0.002 0.004 0.008 e 2.54bsc 0.1bsc ?p1 1.40 1.50 1.60 0. 055 0.059 0.063 h 14.70 15.10 15.50 0.579 0.594 0.610
c opyright ruichips semiconductor co . , ltd rev. a C j an ., 2010 10 www. ruichips .com ru61 99 to - 220f - 3l all dimensions refer to jedec standard do not include mold flash o r protrusions mm inch mm inch symbol min nom max min nom max symbol min nom max min nom max e 9.96 10. 16 10.36 0.392 0.400 0.408 ?p 3 - 3.450 - - 0.136 - a 4.50 4.70 4.90 0.177 0.185 0.193 1 5 7 9 5 7 9 a 1 2.34 2.54 2.74 0.092 0.100 0.108 2 - 45 - - 45 - a2 0.95 1.05 1.15 0.037 0.041 0.045 dep 0.05 0.10 0.15 0.002 0.004 0.006 a3 0.42 0.52 0.62 0.017 0.020 0.024 f1 1.90 2.00 2.10 0.075 0.079 0.083 a4 2.65 2.75 2.85 0.104 0.108 0 .112 f2 13.61 13.81 14.01 0.536 0.544 0.552 c - 0.50 - - 0.020 - f3 3.20 3.30 3.40 0.126 0.130 0.134 d 15.67 15.87 16.07 0.617 0.625 0.633 g 3.25 3.45 3.65 0.128 0.136 0.144 q 8.80 9.00 9.20 0.346 0.354 0.362 g1 5.90 6.00 6.10 0.232 0.236 0.240 h 1 6.48 6.68 6.88 0.255 0.263 0.271 g2 6.90 7.00 7.10 0.272 0.276 0.280 e 2.54bsc 0.1bsc b1 1.17 1.20 1.24 0.046 0.047 0.048 ?p - 3.183 - - 0.125 - b2 0.77 0.8 0.85 0.030 0.031 0.033 l 12.78 12.98 13.18 0.503 0.511 0.519 b3 1.10 1.30 1.50 0.043 0.051 0.059 d1 8.99 9.19 9.39 0.354 0.362 0.370 e1 9.8 10.00 10.20 0.386 0.394 0.412 ?p1 1.40 1.50 1.60 0.055 0.059 0.063 k1 0.75 0.8 0.85 0.030 0.031 0.033 ?p 2 1.15 1.20 1.25 0.045 0.047 0.049
c opyright ruichips semiconductor co . , ltd rev. a C j an ., 2010 11 www. ruichips .com ru61 99 to - 247 all dimensions refer to jedec standard do not include mold flash or protrusions mm inch mm inch symbol min max min max symbol min max min max a 4.850 5.150 0,191 0.200 e 2 3.600 ref 0.142 ref a1 2.200 2.600 0.087 0.102 l 40.900 41.300 1.610 1.626 b 1.000 1.400 0.039 0.055 l1 24.800 25.100 0.976 0.988 b1 2.800 3.200 0.110 0.126 l2 20.300 20.600 0.799 0.811 b2 1.800 2.200 0.071 0.087 7.100 7.300 0.280 0.287 c 0.500 0.700 0.020 0.028 e 5.450 typ 0.215 typ c 1 1.900 2.100 0.075 0.083 h 5.980 ref. 0.235 ref. d 15.450 15.750 0.608 0.620 h 0.000 0.300 0. 000 0.012 e1 3.500 ref. 0.138 ref.
c opyright ruichips semiconductor co . , ltd rev. a C j an ., 2010 12 www. ruichips .com ru61 99 customer service worldwide sales and service : sales@ru i chips.com technical s upport : technical@ruichips.com inves tor relations contacts : investor@ruichips.com marcom contact: marcom@ruichips.com editorial contact : editorial@ruichips.com hr conta c t: hr@ruichips. com legal contact: legal@ruichips.com shen zhen ruichips semiconductor co., ltd room 501, the 5floor an tong industrial bui l ding, n o.207 mei hua road fu tian area shen zhen city , chi na tel: ( 86 - 755) 8311 - 5334 f ax : (86 - 755) 8311 - 4278 e - mail: sales - sz@ruichips.com

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