SIDC59D170H edite d by infineon technologies ai dp ps d cls , l 4481a , edition 2, 2. 11 .200 4 fast switching diode chip in emcon 3 - technology this chip is used for: eupec power modules features: 1700v emcon 3 technology 200 m chip soft, fast switching low reverse recovery charge small temperature coefficient applications: resonant applications, drives a c chip type v r i f die size package ordering code SIDC59D170H 1700v 100a 7.7 x 7.7 mm 2 sawn on foil q67050 - a4176 - a001 mechanical parameter: raster size 7.7 x 7.7 area total / active 59.29 / 45.35 anode pad size 5.68 x 5.68 mm 2 thickness 200 m wafer size 150 mm flat position 180 deg max. possible chips per wafer 238 pcs passivation frontside photoimide anode metallization 3200 nm al si cu cathode metallization ni ag ? system suitable for epoxy and soft solder die bonding die bond electrically conductive glue or solder wire bond al, 500m reject ink dot size ? 0.65mm; max 1.2mm recommended storage environment store in original container, in dry nitrogen, < 6 month at an ambient temperature of 23c
SIDC59D170H edite d by infineon technologies ai dp ps d cls , l 4481a , edition 2, 2. 11 .200 4 maximum ratings parameter symbol condition value unit repetitive peak reverse voltage v rrm 1700 v continuous forward current limited by t jmax i f 100 single pulse forward current (depending on wire bond configuration) i fsm t p = 10 m s sinusoidal 540 maximum repetitive forward current limited by t jmax i frm 200 a operating junction and storage temperature t j , t stg - 55...+150 c static electrical characteristics (tested on chip), t j =25 c, unless otherwise s pecified value parameter symbol conditions min. typ. max. unit reverse leakage current i r v r =1700v t j =25 c 2 7 a cathode - anode breakdown voltage v br i r =0.25ma t j =25c 1700 v forward voltage drop v f i f =100a t j =25 c 1.8 v dynamic elect rical characteristics , at t j = 25 c, unless otherwise specified, tested at component value parameter symbol conditions min. typ. max. unit i rrm1 t j = 25 c 123 peak recovery current i rrm2 i f =100a di/dt=1170 a/ m s v r =900 v t j = 125 c 133 a q rr1 t j =25 c 26.7 reverse recovery charge q rr2 i f =100a di/dt=1170 a/ m s v r =900 v t j =125 c 43.3 c e rec 1 t j = 25 c 13.3 peak recovery energy e rec2 i f =100a di/dt=1170 a/ m s v r =900 v t j =125 c 23.3 mj
SIDC59D170H edite d by infineon technologies ai dp ps d cls , l 4481a , edition 2, 2. 11 .200 4 chip drawing:
SIDC59D170H edite d by infineon technologies ai dp ps d cls , l 4481a , edition 2, 2. 11 .200 4 further electrical characteristics: this chip data sheet refers to the device data sheet infineon technologies / eupec tbd description: aql 0,65 for visual inspection according to failure catalog ele ctrostatic discharge sensitive device according to mil - std 883 test - normen villach/prffeld published by infineon technologies ag bereich kommunikation st. - martin - strasse 53 d - 81541 mnchen ? infineon technologies ag 2000 all rights reserved. att ention please! the information herein is given to describe certain components and shall not be considered as warranted characteristics. terms of delivery and rights to technical change reserved. we hereby disclaim any and all warranties, including but not limited to warranties of non - infringement, regarding circuits, descriptions and charts stated herein. infineon technologies is an approved cecc manufacturer. information for further information on technology, delivery terms and conditions and prices pleas e contact your nearest infineon technologies office in germany or our infineon technologies representatives world - wide (see address list). warnings due to technical requirements components may contain dangerous substances. for information on the types in q uestion please contact your nearest infineon technologies office. infineon technologies components may only be used in life - support devices or systems with the express written approval of infineon technologies, if a failure of such components can reasonabl y be expected to cause the failure of that life - support device or system, or to affect the safety or effectiveness of that device or system. life support devices or systems are intended to be implanted in the human body, or to support and / or maintain and sustain and / or protect human life. if they fail, it is reasonable to assume that the health of the user or other persons may be endangered.
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