bym07-50 thru bym07-4 00, egl34a thru egl34g document number 88580 10-aug-05 vishay general semiconductor www.vishay.com 1 do-213aa (gl34) *glass-plastic encapsulation is covered by patent no. 3,996,602, brazed-lead assembly to patent no. 3,930,306 p a t e n t e d * ? surface mount glass passivat ed ultrafast rectifier major ratings and characteristics i f(av) 0.5 a v rrm 50 v to 400 v i fsm 10 a t rr 50 ns v f 1.25 v, 1.35 v t j max. 175 c features ? cavity-free glass-passivated junction ? ideal for automated placement ? ultrafast reverse recovery time ? low switching losse s, high efficiency ? meets environmental standard mil-s-19500 ? meets msl level 1, per j-std-020c ? solder dip 260 c, 40 seconds typical applications for use in high frequency rectification and freewheel- ing application in switch ing mode converters and inverters for consumer, computer, automotive and telecommunication mechanical data case: do-213aa, molded epoxy over glass body epoxy meets ul-94v-0 flammability rating terminals: matte tin plated leads, solderable per j-std-002b and jesd22-b102d e3 suffix for commercial grade, he3 suffix for high reliability grade (aec q101 qualified) polarity: two bands indicate cathode end - 1st band denotes device type and 2nd band denotes repetitive peak reverse voltage rating maximum ratings t a = 25 c unless otherwise specified parameter symbol bym07-50 bym07-100 bym07-150 bym07-200 bym07-300 bym07-400 unit fast efficient device: 1st band is green egl34a egl34b egl34c egl34d egl34f egl34g polarity color bands (2nd band) gray red pink orange brown yellow maximum repetitive peak reverse voltage v rrm 50 100 150 200 300 400 v maximum rms voltage v rms 35 70 105 140 210 280 v maximum dc blocking voltage v dc 50 100 150 200 300 400 v maximum average forward rectified current at t t = 75 c i f(av) 0.5 a peak forward surge current 8.3 ms single half sine-wave superimposed on rated load i fsm 10 a maximum full load reverse current, full cycle average at t a = 55 c i r(av) 50 a operating junction and storage temperature range t j ,t stg - 65 to + 175 c
www.vishay.com 2 document number 88580 10-aug-05 bym07-50 thru bym07-400 , egl34a thru egl34g vishay general semiconductor electrical characteristics t a = 25 c unless otherwise specified notes: (1) pulse test: 300 s pulse width, 1 % duty cycle thermal characteristics t a = 25 c unless otherwise specified notes: (1) thermal resistance from junction to ambient, 0. 24 x 0.24" (6.0 x 6.0 mm) copper pads to each terminal (2) thermal resistance from juncti on to terminal, 0.24 x 0.24" (6.0 x 6.0 mm) copper pads to each terminal ratings and characteristics curves (t a = 25 c unless otherwise specified) parameter te s t c o n d i t i o n symbol bym07-50 bym07-100 bym07-150 bym07-200 bym07-300 bym07-400 unit egl34a egl34b egl34c egl34d egl34f egl34g maximum dc reverse current at rated dc blocking voltage (1) t a = 25 c t a = 125 c i r 5.0 50 a maximum instantaneous forward voltage (1) at 0.5 a v f 1.25 1.35 v max. reverse recovery time at i f = 0.5 a, i r = 1.0 a, i rr = 0.25 a t rr 50 ns typical junction capacitance at 4.0 v, 1 mhz c j 7.0 pf parameter symbol bym07-50 bym07-100 bym07-150 bym07-200 bym07-300 bym07-400 unit egl34a egl34b egl34c egl34d egl34f egl34g maximum thermal resistance (1, 2) r ja r jt 150 70 c/w figure 1. forward current derating curve 0 0 25 50 75 100 125 150 175 a v erage for w ard rectified c u rrent (a) terminal temperat u re (c) 0.3 0.5 0.4 0.2 0.1 resisti v eo r ind u cti v e load figure 2. maximum non-repetitive peak forward surge current 0 2 4 6 8 10 12 1 100 10 peak for w ard s u rge c u rrent (a) t j = t j max. 8 .3 ms single half sine- w a v e nu m b er of cycles at 60 hz
bym07-50 thru bym07-4 00, egl34a thru egl34g document number 88580 10-aug-05 vishay general semiconductor www.vishay.com 3 package outline dimensions in inches (millimeters) figure 3. typical instantaneous forward characteristics figure 4. typical reve rse characteristics instantaneo u sfor w ard v oltage ( v ) instantaneo u sfor w ard c u rrent (a) 0.2 0.4 0.6 0. 8 1.0 1.2 1.4 1.6 1. 8 2.0 50 10 1 0.1 0.01 egl34a ? egl34d egl34f & egl34g t j = 150 c t j = 25 c p u lse w idth = 300 s 1 % d u ty cycle percent of rated peak re v erse v oltage ( % ) 0 20 40 60 8 0 100 0.001 0.01 0.1 1 10 100 t j = 150 c t j = 125 c t j = 25 c t j = 75 c i ns t an t aneo u s r e v erse l ea k age c u rrent ( a) figure 5. typical junction capacitance figure 6. typical trans ient thermal impedance re v erse v oltage ( v ) j u nction capacitance (pf) 0.1 1 10 0 5 10 15 20 25 30 35 100 t j = 25 c f = 1.0 mhz v sig = 50m v p-p t, p u lse d u ration (sec.) transient thermal impedance (c/ w ) 0.01 0.1 1 10 100 100 10 1 0.1 solderable ends 1st band 2nd band 0.022 (0.559) 0.016 (0.406) 0.145 (3.683) 0.131(3.327) d1= 0.066 0.060 (1.676) (1.524) d2=d1 +0 - 0.008 (0.20) 1st band denotes type and polarity 2nd band denotes voltage type d2 do-213aa (gl34)
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