document number: 88637 for technical ques tions within your region, please cont act one of the following: www.vishay.com revision: 20-jan-11 diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com 1 glass passivated junction rectifier gp10a thru gp10y vishay general semiconductor features ? superectifier structure for high reliability application ? cavity-free glass- passivated junction ? low forward voltage drop ? low leakage current ? high forward surge capability ? meets environmental standard mil-s-19500 ? solder dip 275 c max. 10 s, per jesd 22-b106 ? aec-q101 qualified ? compliant to rohs directive 2002/95/ec and in accordance to weee 2002/96/ec typical applications for use in general purpose rect ification of power supplies, inverters, converters and freewheeling diodes for both consumer and automotive applications. mechanical data case: do-204al, molded epoxy over glass body molding compound meets ul 94 v-0 flammabi lity rating base p/n-e3 - rohs compliant, commercial grade base p/nhe3 - rohs compli ant, aec-q101 qualified terminals: matte tin plated leads, solderable per j-std-002 and jesd 22-b102 e3 suffix meets jesd 201 cla ss 1a whisker test, he3 suffix meets jesd 201 class 2 whisker test polarity: color band denotes cathode end primary characteristics i f(av) 1.0 a v rrm 50 v to 1600 v i fsm 30 a, 25 a i r 5.0 a v f 1.1 v, 1.2 v, 1.3 v t j max. 175 c do-204al (do-41) maximum ratings (t a = 25 c unless otherwise noted) parameter symbol a b d g j k m n q t v w y unit maximum repetitive pe ak reverse voltage v rrm 50 to 1600 (fig. 5) v maximum average forward rectified current 0.375" (9.5 mm) lead length (fig. 1) i f(av) 1.0 a peak forward surge current 8.3 ms single half sine-wave superimposed on rated load i fsm 30 25 a maximum full load reverse current, full cycle average, 0.375" (9.5 mm) lead length at t a = 75 c i r(av) 30 a operating junction and storage temperature range t j , t stg - 65 to + 175 - 65 to + 150 c
www.vishay.com for technical qu estions within your region, please contact one of the fo llowing: document number: 88637 2 diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com revision: 20-jan-11 gp10a thru gp10y vishay general semiconductor note (1) thermal resistance from junction to ambient at 0.375" (9.5 mm) lead length, p.c.b. mounted note (1) aec-q101 qualified ratings and characteristics curves (t a = 25 c unless otherwise noted) fig. 1 - forward current derating curve fig. 2 - maximum non-repetitive pe ak forward surge current electrical characteristics (t a = 25 c unless otherwise noted) parameter test conditions symbol a b d g j k m n q t v w y unit maximum instantaneous forward voltage 1.0 a v f 1.1 1.2 1.3 v maximum dc reverse current at rated dc blocking voltage t a = 25 c i r 5.0 a t a = 125 c 50 typical reverse recovery time i f = 0.5 a, i r = 1.0 a, i rr = 0.25 a t rr 3.0 s typical junction capacitance 4.0 v, 1 mhz c j 8.0 7.0 5.0 pf thermal characteristics (t a = 25 c unless otherwise noted) parameter symbol a b d g j k m n q t v w y unit typical thermal resistance r ? ja (1) 55 c/w ordering information (example) preferred p/n unit weight (g) preferred package code base quantity delivery mode gp10j-e3/54 0.335 54 5500 13" diam eter paper tape and reel gp10j-e3/73 0.335 73 3000 am mo pack packaging gp10jhe3/54 (1) 0.335 54 5500 13" diameter paper tape and reel gp10jhe3/73 (1) 0.335 73 3000 ammo pack packaging 20 40 60 80 100 120 140 160 180 0 0.2 0.4 0.6 0.8 1.0 ambient temperature (c) average forwar d rectied current (a) g p10a thru g p10m g p10n thru g p10y 60 hz re s i s tive or inductive load 0.375 " (9.5 mm) lead length 1 10 100 10 5 15 20 25 30 number of cycle s at 60 hz peak forwar d s urge current (a) t j = t j max. 8.3 m s s ingle half s ine-wave g p10a thru g p10m g p10n thru g p10y
document number: 88637 for technical ques tions within your region, please cont act one of the following: www.vishay.com revision: 20-jan-11 diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com 3 gp10a thru gp10y vishay general semiconductor fig. 3 - typical instantaneous forward characteristics fig. 4 - typical reverse characteristics fig. 5 - maximum repetitive peak reverse voltage, v rrm fig. 6 - typical j unction capacitance package outline dimensions in inches (millimeters) 0.6 0.8 1.0 1.2 1.4 1.6 10 100 1 0.1 0.01 in s tantaneou s forward voltage (v) in s tantaneou s forward current (a) g p10a thru g p10j g p10k thru g p10 q g p10t thru g p10y t j = 25 c pul s e width = 300 s 1 % duty cycle 0 20 40 60 80 100 0.01 0.001 0.1 1 10 percent of rated peak rever s e voltage (%) in s tantaneou s rever s e current (a) t j = 125 c t j = 25 c t j = 75 c g p10a................. 50 v g p10b............... 100 v g p10d.............. 200 v g p10 g .............. 400 v g p10j............... 600 v g p10k............... 800 v g p10m.............1000 v g p10n............. 1100 v g p10 q ............. 1200 v g p10t..............1300 v g p10v............. 1400 v g p10w............ 1500 v g p10y............. 1600 v 1 0.1 10 100 10 1 100 rever s e voltage (v) junction capacit ance (pf) t j = 25 c f = 1.0 mhz v s ig = 50 mv p-p g p10a thru g p10j g p10k thru g p10 q g p10t thru g p10y do-204al (do-41) 1.0 (25.4) min. 1.0 (25.4) min. 0.205 (5.2) 0.160 (4.1) 0.107 (2.7) 0.080 (2.0) dia. 0.034 (0.86) 0.028 (0.71) dia. ? lead diameter i s for s ufx e part number s 0.026 (0.66) 0.023 (0.58) note
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