rev.2.00 aug 10, 2005 page 1 of 7 2sc5543 silicon npn epitaxial vhf / uhf wide band amplifier rej03g0745-0200 (previous ade-208-690) rev.2.00 aug.10.2005 features ? super compact package; (1.4 0.8 0.59mm) ? capable low voltage operation ; (v ce = 1v) outline renesas package code: pusf0003za-a (package name: mfpak r ) 1. emitter 2. base 3. collecto r 1 3 2 note: marking is ?ya-?. *mfpak is a trademark of renesas technology corp. absolute maximum ratings (ta = 25c) item symbol ratings unit collector to base voltage v cbo 15 v collector to emitter voltage v ceo 8 v emitter to base voltage v ebo 1.5 v collector current i c 20 ma collector power dissipation pc 80 mw junction temperature tj 150 c storage temperature tstg ?55 to +150 c
2sc5543 rev.2.00 aug 10, 2005 page 2 of 7 electrical characteristics (ta = 25c) item symbol min typ max unit test conditions collector cutoff current i cbo ? ? 10 a v cb = 15v , i e = 0 collector cutoff current i ceo ? ? 1 ma v ce = 8v , r be = emitter cutoff current i ebo ? ? 10 a v eb = 1.5v , i c = 0 dc current transfer ratio h fe 85 ? 170 v ce = 1v , i c = 5ma collector output capacitance cob ? 0.51 0.9 pf v cb = 1v , i e = 0 f = 1mhz gain bandwidth product f t 5.5 8.5 ? ghz v ce = 1v , i c = 5ma power gain pg 11 13.7 ? db v ce = 1v, i c = 5ma f = 900mhz noise figure nf ? 1.1 2.5 db v ce = 1v, i c = 5ma f = 900mhz
2sc5543 rev.2.00 aug 10, 2005 page 3 of 7 main characteristics 160 120 80 40 0 50 100 150 200 10 0.1 1 10 12 5 10 20 50 100 0 2 4 6 8 10 100 200 0 1 20 100 collector power dissipation p c (mw) ambient temperature ta ( c) maximum collector dissipation curve collector to base voltage v cb (v) collector output capacitance c ob (pf) collector output capacitance vs. collector to base voltage collector current i c (ma) dc current transfer ratio h fe dc current transfer ratio vs. collector current collector current i c (ma) gain bandwidth product f t (ghz) gain bandwidth product vs. collector current 25 50 v = 1 v ce 0.2 0.4 0.6 0.8 1.0 0 0.2 0.5 2 5 i = 0 f = 1mhz e v ce = 1 v 1 5 10 50 100 10 3 5 0 1 20 100 power gain pg (db) power gain vs. collector current collector current i c (ma) noise figure nf (db) noise figure vs. collector current 25 50 0 4 8 12 16 20 collector current i c (ma) 2 20 v = 1 v ce f = 900mhz 4 2 1 v = 1 v ce f = 900mhz
2sc5543 rev.2.00 aug 10, 2005 page 4 of 7 110100 s 21 parameter |s 21 | 2 (db) 4 8 12 16 20 0 25 20 50 s 21 parameter vs. collector current v = 1 v ce f = 1ghz collector current i c (ma)
2sc5543 rev.2.00 aug 10, 2005 page 5 of 7 10 5 4 3 2 1.5 1 .8 ?2 ?3 ?4 ?5 ?10 .6 .4 .2 0 ?.2 ?.4 ?.6 ?.8 ?1 ?1.5 .2 .4 .6 .8 1 2 3 4 5 1.5 10 scale: 4 / div. 60 90 120 150 180 ?150 ?90 ?60 ?30 30 0 ?120 scale: 0.04 / div. 0 30 60 90 120 150 180 ?150 ?90 ?60 ?30 ?120 10 5 4 3 2 1.5 1 .8 ?2 ?3 ?4 ?5 ?10 .6 .4 .2 0 ?.2 ?.4 ?.6 ?.8 ?1 ?1.5 .2 .4 .6 .8 1 2 3 4 5 1.5 10 condition : 100 to 2000 mhz (100 mhz step) c ce v = 1 v , i = 5ma condition : 100 to 2000 mhz (100 mhz step) condition : 100 to 2000 mhz (100 mhz step) condition : 100 to 2000 mhz (100 mhz step) s11 parameter vs. frequency s21 paraameter vs. frequency s12 parameter vs. frequency s22 parameter vs. frequency ce v = 1 v , i = 5ma ce v = 1 v , i = 5ma ce v = 1 v , i = 5ma c c c
2sc5543 rev.2.00 aug 10, 2005 page 6 of 7 sparameter (v ce = 1v, i c = 5ma, zo = 50 ? ) s11 s21 s12 s22 f (mhz) mag ang mag ang mag ang mag ang 100 0.836 ?20.7 13.66 162.9 0.0249 77.4 0.948 ?14.2 200 0.757 ?41.1 12.22 146.9 0.0472 68.0 0.846 ?26.9 300 0.649 ?58.5 10.57 134.1 0.0637 60.8 0.727 ?36.2 400 0.564 ?73.2 9.14 124.5 0.0750 56.9 0.623 ?42.5 500 0.496 ?85.2 7.90 116.8 0.0840 54.2 0.538 ?46.2 600 0.436 ?97.1 6.91 111.2 0.0916 53.4 0.469 ?48.8 700 0.396 ?106.2 6.12 105.9 0.0985 53.0 0.413 ?50.4 800 0.364 ?114.9 5.49 102. 0 0.105 53.2 0.368 ?51.1 900 0.338 ?123.9 4.96 98. 3 0.111 53.6 0.327 ?51.1 1000 0.316 ?130.6 4.52 95. 3 0.118 54.1 0.297 ?51.2 1100 0.305 ?140.0 4.16 92. 3 0.124 54.7 0.270 ?50.7 1200 0.296 ?146.5 3.86 89. 8 0.130 55.3 0.246 ?49.7 1300 0.293 ?153.0 3.59 87. 5 0.137 56.1 0.229 ?48.7 1400 0.286 ?159.5 3.36 85. 4 0.143 56.6 0.209 ?47.9 1500 0.287 ?166.0 3.17 83. 2 0.150 57.2 0.195 ?46.3 1600 0.285 ?170.7 3.00 81. 4 0.157 57.7 0.180 ?45.0 1700 0.289 ?175.8 2.83 79. 8 0.164 58.2 0.167 ?43.8 1800 0.294 178.7 2.71 77. 9 0.171 58.8 0.154 ?42.4 1900 0.302 175.4 2.59 75. 9 0.178 59.0 0.144 ?40.2 2000 0.308 171.1 2.47 74. 5 0.185 59.2 0.133 ?38.6
2sc5543 rev.2.00 aug 10, 2005 page 7 of 7 package dimensions a d e l h e l p a 2 a 1 a c a a b xsa m s e e b 2 i 1 e 1 pattern of terminal position areas a a 1 a 2 b b 1 c c 1 d e e h e l l p x b 2 e 1 i 1 0.55 0 0.55 0.15 0.1 1.35 0.7 1.15 0.1 0.15 min nom dimension in millimeters reference symbol max 0.22 0.2 0.13 0.11 1.4 0.8 0.45 1.2 0.2 0.75 0.6 0.01 0.59 0.3 0.15 1.45 0.9 1.25 0.3 0.45 0.05 0.35 0.5 sc-89 modified 0.0016g mass[typ.] mfpak / mfpakv pusf0003za-a renesas code jeita package code package name b a-a section b 1 c 1 c ordering information part name quantity shipping container 2SC5543YA-TR-E 9000 178 mm reel, 8 mm emboss taping note: for some grades, production may be terminated. please contact the renesas sales office to check the state of production before ordering the product.
keep safety first in your circuit designs! 1. renesas technology corp. puts the maximum effort into making semiconductor products better and more reliable, but there is a lways the possibility that trouble may occur with them. trouble with semiconductors may lead to personal injury, fire or property damage. remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placeme nt of substitutive, auxiliary circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap. notes regarding these materials 1. these materials are intended as a reference to assist our customers in the selection of the renesas technology corp. product best suited to the customer's application; they do not convey any license under any intellectual property rights, or any other rights, belonging to renesas t echnology corp. or a third party. 2. renesas technology corp. assumes no responsibility for any damage, or infringement of any third-party's rights, originating in the use of any product data, diagrams, charts, programs, algorithms, or circuit application examples contained in these materials. 3. all information contained in these materials, including product data, diagrams, charts, programs and algorithms represents i nformation on products at the time of publication of these materials, and are subject to change by renesas technology corp. without notice due to product improvement s or other reasons. it is therefore recommended that customers contact renesas technology corp. or an authorized renesas technology corp. product distrib utor for the latest product information before purchasing a product listed herein. the information described here may contain technical inaccuracies or typographical errors. renesas technology corp. assumes no responsibility for any damage, liability, or other loss rising from these inaccuracies o r errors. please also pay attention to information published by renesas technology corp. by various means, including the renesas techn ology corp. semiconductor home page (http://www.renesas.com). 4. when using any or all of the information contained in these materials, including product data, diagrams, charts, programs, a nd algorithms, please be sure to evaluate all information as a total system before making a final decision on the applicability of the information and products. renesas technology corp. assumes no responsibility for any damage, liability or other loss resulting from the information contained herein. 5. renesas technology corp. semiconductors are not designed or manufactured for use in a device or system that is used under ci rcumstances in which human life is potentially at stake. please contact renesas technology corp. or an authorized renesas technology corp. product distributor when considering the use of a product contained herein for any specific purposes, such as apparatus or systems for transportation, vehicular, medical, aerosp 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renesas technology europe limited dukes meadow, millboard road, bourne end, buckinghamshire, sl8 5fh, u.k. tel: <44> (1628) 585-100, fax: <44> (1628) 585-900 renesas technology hong kong ltd. 7th floor, north tower, world finance centre, harbour city, 1 canton road, tsimshatsui, kowloon, hong kong tel: <852> 2265-6688, fax: <852> 2730-6071 renesas technology taiwan co., ltd. 10th floor, no.99, fushing north road, taipei, taiwan tel: <886> (2) 2715-2888, fax: <886> (2) 2713-2999 renesas technology (shanghai) co., ltd. unit2607 ruijing building, no.205 maoming road (s), shanghai 200020, china tel: <86> (21) 6472-1001, fax: <86> (21) 6415-2952 renesas technology singapore pte. ltd. 1 harbour front avenue, #06-10, keppel bay tower, singapore 098632 tel: <65> 6213-0200, fax: <65> 6278-8001 renesas technology korea co., ltd. kukje center bldg. 18th fl., 191, 2-ka, hangang-ro, yongsan-ku, seoul 140-702, korea tel: <82> 2-796-3115, fax: <82> 2-796-2145 renesas technology malaysia sdn. bhd. unit 906, block b, menara amcorp, amcorp trade centre, no.18, jalan persiaran barat, 46050 petaling jaya, selangor darul ehsan, malaysia tel: <603> 7955-9390, fax: <603> 7955-9510 renesas sales offices ? 200 5. re nesas technology corp ., all rights reser v ed. printed in ja pan. colophon .3.0
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