2007. 7. 27 1/2 semiconductor technical data kdz6.8cf revision no : 2 zener diode silicon epitaxial planar diode tfsc dim millimeters a b c d e 1.00 0.05 0.80+0.10/-0.05 0.60 0.05 0.30 0.05 0.40 max cathode mark c d b 1 2 a e f 0.13 0.05 f + _ + _ + _ + _ 1. anode 2. cathode characteristic symbol rating unit power dissipation p d * 100 mw junction temperature t j 150 storage temperature range t stg -55 150 type name marking z * mounted on a glass epoxy circuit board of 20 20 , pad dimension of 4 4 . characteristic symbol test condition min. typ. max. unit zener voltage v z i z =5ma 6.650 - 6.930 v dynamic impedance z z i z =5ma - - 40 knee dynamic impedance z zk i z =0.5ma - - 60 reverse current i r v r =3.5v - - 0.5 a total capacitance c t v r =0.5v, f=1mhz - - 17 pf v r =2.5v, f=1mhz - - 13 electrical characteristics (ta=25 ) constant voltage regulation application and esd protection. features small package : tfsc high reliability. transient protection for high-speed data line to iec61000-4-2(esd) 15kv(aiv), 8kv (contact). low capacitance. low leakage current. zener voltage tolerance : 2% applications constant voltage regulation. esd protection. suitable for portable instruments. high-speed data lines. maximum rating (ta=25 )
2007. 7. 27 2/2 kdz6.8cf revision no : 2 reverse currnet i r (na) i r - v r 0 0.00001 0.0001 1234 0.001 0.01 0.1 1 10 100 zener current i z (ma) 0.01 7 6 5 zener voltage v z (v) reverse voltage (v) v z - i z 8910 0.1 1 10 power dissipation p d (mw) p d - ta 0 0 50 100 150 200 50 100 150 200 ambient temperature ta ( c) * mounted on a glass epoxy circuit board of 20 x 20mm pad dimension of 4 x 4mm capacitance c t (pf) 2 1 0 reverse voltage v r (v) c t - v r 345 5 10 20 15 ta=150 c 75 c 25 c -25 c 150 c 75 c 25 c ta= -25 c
|
