1 MRF5P21180R6 motorola rf device data the rf sub - micron mosfet line rf power field effect transistor n - channel enhancement - mode lateral mosfet designed for w - cdma base station applications with frequencies from 2110 to 2170 mhz. suitable for tdma, cdma and multicarrier amplifier applications. to be used in class ab for pcn - pcs/cellular radio and wll applications. ? typical 2 - carrier w - cdma performance for v dd = 28 volts, i dq = 2 x 800 ma, f1 = 2135 mhz, f2 = 2145 mhz, channel bandwidth = 3.84 mhz, adjacent channels measured over 3.84 mhz bw @ f1 - 5 mhz and f2 + 5 mhz. distortion products measured over a 3.84 mhz bw @ f1 - 10 mhz and f2 + 10 mhz, each carrier peak/avg. = 8.5 db @ 0.01% probability on ccdf. output power ? 38 watts avg. power gain ? 14 db efficiency ? 25.5% im3 ? - 37.5 dbc acpr ? - 41 dbc ? internally matched, controlled q, for ease of use ? high gain, high efficiency and high linearity ? integrated esd protection ? designed for maximum gain and insertion phase flatness ? capable of handling 10:1 vswr, @ 28 vdc, 2140 mhz, 180 watts cw output power ? excellent thermal stability ? characterized with series equivalent large - signal impedance parameters ? qualified up to a maximum of 32 v dd operation ? in tape and reel. r6 suffix = 150 units per 56 mm, 13 inch reel. maximum ratings rating symbol value unit drain - source voltage v dss 65 vdc gate - source voltage v gs - 0.5, +15 vdc total device dissipation @ t c = 25 c derate above 25 c p d 437.5 2.5 watts w/ c storage temperature range t stg - 65 to +150 c operating junction temperature t j 200 c thermal characteristics characteristic symbol value unit thermal resistance, junction to case case temperature 80 c, 180 w cw case temperature 80 c, 38 w cw r jc 0.43 0.47 c/w note - caution - mos devices are susceptible to damage from electrostatic charge. reasonable precautions in handling and packaging mos devices should be observed. order this document by mrf5p21180/d motorola semiconductor technical data MRF5P21180R6 2170 mhz, 38 w avg., 2 x w - cdma, 28 v lateral n - channel rf power mosfet case 375d - 05, style 1 ni - 1230 ? motorola, inc. 2004 rev 4 f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
MRF5P21180R6 2 motorola rf device data esd protection characteristics test conditions class human body model 2 (minimum) machine model m3 (minimum) charge device model c7 (minimum) electrical characteristics (t c = 25 c unless otherwise noted) characteristic symbol min typ max unit off characteristics (1) zero gate voltage drain leakage current (v ds = 65 vdc, v gs = 0 vdc) i dss ? ? 10 adc zero gate voltage drain leakage current (v ds = 28 vdc, v gs = 0) i dss ? ? 1 adc gate - source leakage current (v gs = 5 vdc, v ds = 0 vdc) i gss ? ? 1 adc on characteristics (1) gate threshold voltage (v ds = 10 vdc, i d = 200 adc) v gs(th) 2.5 2.8 3.5 vdc gate quiescent voltage (v ds = 28 vdc, i d = 800 madc) v gs(q) ? 3.6 ? vdc drain - source on - voltage (v gs = 10 vdc, i d = 2 adc) v ds(on) ? 0.26 0.3 vdc forward transconductance (v ds = 10 vdc, i d = 2 adc) g fs ? 5 ? s dynamic characteristics (1) reverse transfer capacitance (v ds = 28 vdc 30 mv(rms)ac @ 1 mhz, v gs = 0 vdc) c rss ? 1.7 ? pf functional tests (in motorola test fixture, 50 ohm system) (2) 2 - carrier w - cdma, 3.84 mhz channel bandwidth carriers, acpr and im3 measured in 3.84 mhz bandwidth. peak/avg. = 8.5 db @ 0.01% probability on ccdf. common - source amplifier power gain (v dd = 28 vdc, p out = 38 w avg., i dq = 2 x 800 ma, f1 = 2112.5 mhz, f2 = 2122.5 mhz and f1 = 2157.5 mhz, f2 = 2167.5 mhz) g ps 12.5 14 ? db drain efficiency (v dd = 28 vdc, p out = 38 w avg., i dq = 2 x 800 ma, f1 = 2112.5 mhz, f2 = 2122.5 mhz and f1 = 2157.5 mhz, f2 = 2167.5 mhz) 23 25.5 ? % third order intermodulation distortion (v dd = 28 vdc, p out = 38 w avg., i dq = 2 x 800 ma, f1 = 2112.5 mhz, f2 = 2122.5 mhz and f1 = 2157.5 mhz, f2 = 2167.5 mhz; im3 measured over 3.84 mhz bw @ f1 - 10 mhz and f2 +10 mhz referenced to carrier channel power.) im3 ? - 37.5 -35 dbc adjacent channel power ratio (v dd = 28 vdc, p out = 38 w avg., i dq = 2 x 800 ma, f1 = 2112.5 mhz, f2 = 2122.5 mhz and f1 = 2157.5 mhz, f2 = 2167.5 mhz; acpr measured over 3.84 mhz bw @ f1 - 5 mhz and f2 +5 mhz.) acpr ? -41 -38 dbc input return loss (v dd = 28 vdc, p out = 38 w avg., i dq = 2 x 800 ma, f1 = 2112.5 mhz, f2 = 2122.5 mhz and f1 = 2157.5 mhz, f2 = 2167.5 mhz) irl ? -14 -9 db (1) each side of device measured separately. part is internally matched both on input and output. (2) measurements made with device in push - pull configuration. f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
3 MRF5P21180R6 motorola rf device data figure 1. MRF5P21180R6 test circuit schematic z1, z22 1.000 x 0.066 microstrip z2, z21 0.760 x 0.113 microstrip z3, z20 0.068 x 0.066 microstrip z4, z19 1.672 x 0.066 microstrip z5, z6 0.318 x 0.066 microstrip z7, z8 0.284 x 0.180 microstrip z9, z10 0.094 x 0.650 microstrip r1 r2 c23 + c13 c11 c5 z11 z1 z2 rf input c1 z3 z5 z7 z9 c2 z4 z6 z8 z10 z12 r3 c24 + c14 c12 c6 r4 r5 z15 z16 c8 + c9 c19 + c20 c16 + c18 + v supply c7 + c10 c21 + c22 c15 + c17 + c4 z13 z17 z19 c3 z23 z18 z20 z21 z22 rf output dut z11, z12 1.030 x 0.035 microstrip z13, z14 0.083 x 0.650 microstrip z15, z16 0.550 x 0.058 microstrip z17, z18 0.353 x 0.066 microstrip z23, z24 0.417 x 0.650 microstrip z25, z26 0.161 x 0.650 microstrip pcb taconic rf - 35, 0.030 , r = 3.5 v bias z25 z24 z26 z14 v bias v supply r6 table 1. MRF5P21180R6 test circuit component designations and values part description value, p/n or dwg manufacturer c1, c2, c3, c4 30 pf chip capacitors 100b300jca500x atc c5, c6, c7, c8 5.6 pf chip capacitors 100b5r6jca500x atc c9, c10 10 f tantalum capacitors t495x106k035as4394 kemet c11, c12 1000 pf chip capacitors 100b102jca500x atc c13, c14, c15, c16 0.1 f chip capacitors cdr33bx104akws kemet c17, c18, c19, c20, c21, c22 22 f tantalum capacitors t491x226k035as4394 kemet c23, c24 1.0 f tantalum capacitors t491c105m050 kemet r1, r2, r3, r4 10 , 1/8 w chip resistors r5, r6 1.0 k , 1/8 w chip resistor f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
MRF5P21180R6 4 motorola rf device data figure 2. MRF5P21180R6 test circuit component layout c1 r1 r2 c2 c3 c4 c5 c6 c7 c8 c9 c10 c11 c12 c13 c14 c15 c16 c17 c18 c19 c20 cut out area c21 c22 c24 c23 r3 r4 r5 v gg v dd mrf5p21180 rev 5 r6 v gg v dd f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
5 MRF5P21180R6 motorola rf device data typical characteristics 2200 5 15 2080 ?45 40 irl g ps acpr im3 f, frequency (mhz) figure 3. 2 - carrier w - cdma broadband performance g ps , power gain (db) v dd = 28 vdc, p out = 38 w (avg.), i dq = 1600 ma 2?carrier w?cdma, 10 mhz carrier spacing 3.84 mhz channel bandwidth peak/avg. = 8.5 db @ 0.01% probability (ccdf) im3 (dbc), acpr (dbc) , drain ?30 ?10 ?15 ?20 ?25 input return loss (db) irl, efficiency (%) ?35 14 35 13 30 12 25 11 20 10 ?20 9 ?25 8 ?30 7 ?35 6 ?40 2100 2120 2140 2160 2180 300 12.5 15 20 i dq = 2400 ma 2000 ma p out , output power (watts) pep figure 4. two - tone power gain versus output power g ps , power gain (db) v dd = 28 vdc f1 = 2135 mhz, f2 = 2145 mhz two?tone measurement, 10 mhz tone spacing 800 ma 1600 ma 1200 ma 14.5 14 13.5 13 40 60 80 100 200 300 ?50 ?20 20 i dq = 800 ma 2400 ma p out , output power (watts) pep figure 5. third order intermodulation distortion versus output power im3, third order intermodulation distortion (dbc) v dd = 28 vdc f1 = 2135 mhz, f2 = 2145 mhz two?tone measurement, 10 mhz tone spacing ?25 ?30 ?35 ?40 ?45 40 60 80 100 200 2000 ma 1200 ma 1600 ma 30 ?60 ?20 0.1 7th order two?tone spacing (mhz) figure 6. intermodulation distortion products versus tone spacing intermodulation distortion (dbc) imd, v dd = 28 vdc, p out = 170 w (pep), i dq = 1600 ma two?tone measurements, center frequency = 2140 mhz ?25 ?30 ?35 ?40 ?45 ?50 ?55 11020 5th order 3rd order 42 58 30 actual p3db = 53.72 dbm (236 w) p in , input power (dbm) figure 7. pulse cw output power versus input power p out , output power (dbm) v dd = 28 vdc, i dq = 1600 ma pulsed cw, 5 sec (on), 1 msec (off) center frequency = 2140 mhz ideal p1db = 52.99 dbm (199 w) 56 54 52 50 48 46 44 32 34 36 38 40 42 f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
MRF5P21180R6 6 motorola rf device data 0 40 4 ?55 ?15 g ps acpr im3 p out , output power (watts) w?cdma figure 8. 2 - carrier w - cdma acpr, im3, power gain and drain efficiency versus output power , drain efficiency (%), g ps , power gain (db) im3 (dbc), acpr (dbc) v dd = 28 vdc, i dq = 1600 ma f1 = 2135 mhz, f2 = 2145 mhz 2 x w?cdma, 10 mhz @ 3.84 mhz bandwidth peak/avg. = 8.5 db @ 0.01% probability (ccdf) 35 ?20 30 ?25 25 ?30 20 ?35 15 ?40 10 ?45 5 ?50 6 8 10 30 50 figure 9. 2-carrier w-cdma spectrum f, frequency (mhz) ?110 ?120 ?70 ?20 ?80 ?60 ?50 (db) ?90 ?100 ?40 ?30 3.84 mhz channel bw ?im3 @ 3.84 mhz bw +im3 @ 3.84 mhz bw ?acpr @ 3.84 mhz bw +acpr @ 3.84 mhz bw 20 515 10 0 ?5 ?10 ?15 ?20 ?25 25 10 0.0001 100 0 peak?to?average (db) figure 10. ccdf w - cdma 3gpp, test model 1, 64 dpch, 67% clipping, single carrier test signal probability (%) 10 1 0.1 0.01 0.001 24 68 t j , junction temperature ( c) figure 11. mttf factor versus junction temperature this above graph displays calculated mttf in hours x ampere 2 drain current. life tests at elevated temperatures have correlated to better than 10% of the theoretical prediction for metal failure. divide mttf factor by i d 2 for mttf in a particular application. 220 100 120 140 160 180 200 10 7 10 10 10 9 10 8 mttf factor (hours x amps ) 2 f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
7 MRF5P21180R6 motorola rf device data z o = 25 ? z load * f = 2170 mhz f = 2110 mhz z source f = 2170 mhz f = 2110 mhz figure 12. series equivalent source and load impedance f mhz z source ? z load ? 2110 2140 2170 5.39 - j13.89 5.53 - j14.51 5.66 - j13.99 3.69 - j10.51 3.81 - j10.66 3.79 - j11.05 z source = test circuit impedance as measured from gate to gate, balanced configuration. z load = test circuit impedance as measured from drain to drain, balanced configuration. v dd = 28 v, i dq = 2 x 800 ma, p out = 38 w avg. z source z load input matching network device under test output matching network ? ?+ + f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
MRF5P21180R6 8 motorola rf device data package dimensions case 375d - 05 issue d notes: 1. interpret dimensions and tolerances per asme y14.5m?1994. 2. controlling dimension: inch. 3. dimension h is measured 0.030 (0.762) away from package body. 4. recommended bolt center dimension of 1.52 (38.61) based on m3 screw. style 1: pin 1. drain 2. drain 3. gate 4. gate 5. source dim min max min max millimeters inches a 1.615 1.625 41.02 41.28 b 0.395 0.405 10.03 10.29 c 0.150 0.200 3.81 5.08 d 0.455 0.465 11.56 11.81 e 0.062 0.066 1.57 1.68 f 0.004 0.007 0.10 0.18 g 1.400 bsc 35.56 bsc h 0.082 0.090 2.08 2.29 k 0.117 0.137 2.97 3.48 l 0.540 bsc 13.72 bsc n 1.218 1.242 30.94 31.55 q 0.120 0.130 3.05 3.30 r 0.355 0.365 9.01 9.27 a g l d k 4x q 2x 12 4 3 m 1.219 1.241 30.96 31.52 s 0.365 0.375 9.27 9.53 aaa 0.013 ref 0.33 ref bbb 0.010 ref 0.25 ref ccc 0.020 ref 0.51 ref seating plane n c e m m a m aaa b m t b b (flange) h f m a m ccc b m t r (lid) s (insulator) m a m bbb b m t 4x a t m a m bbb b m t (insulator) m a m ccc b m t (lid) pin 5 m a m bbb b m t 4 ni - 1230 information in this document is provided solely to enable system and software implementers to use motorola products. there are no express or i mplied copyright licenses granted hereunder to design or fabricate any integrated circuits or integrated circuits based on the information in th is document. motorola reserves the right to make changes without further notice to any products herein. motorola makes no warranty, represen tation or guarantee regarding the suitability of its products for any particular purpose, nor does motorola assume any liability arising out of the applicati on or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. ?t ypical? parameters that may be provided in motorola data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. all oper ating parameters, including ?typicals?, must be validated for each customer application by customer?s technical experts. motorola does not convey any license under its patent rights nor the rights of others. motorola products are not designed, intended, or authorized for use as components in systems intended for surgical impl ant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the motorola product could create a s ituation where personal injury or death may occur. should buyer purchase or use motorola products for any such unintended or unauthorized application, buyer s hall indemnify and hold motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expens es, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized u se, even if such claim alleges that motorola was negligent regarding the design or manufacture of the part. motorola and the stylized m logo are registered in the us patent and t rademark office. all other product or service names are the proper ty of their respective owners. motorola, inc. is an equal opportunity/affirmative action employer. motorola inc. 2004 how to reach us: usa / europe / locations not listed : japan : motorola japan ltd.; sps, technical information center, motorola literature distribution 3 - 20 - 1, minami - azabu, minato - ku, tokyo 106 - 8573, japan p.o. box 5405, denver, colorado 80217 81-3- 3440 - 3569 1 - 800 - 521 - 6274 or 480 - 768 - 2130 asia / pacific : motorola semiconductors h.k. ltd.; silicon harbour centre, 2 dai king street, tai po industria l estate, tai po, n.t., hong kong 852 - 26668334 home page : http://motorola.com/semiconductors mrf5p21180/d ? f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
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