abb switzerland ltd, semiconductors reserves the right to change specifications without notice. v ce = 4500 v i c = 1200 a doc. no. 5sya 1401-01 mar 09 ultra low-loss, rugged spt + chip-set smooth switching spt + chip-set for good emc industry standard package high power density alsic base-plate for high power cycling capability aln substrate for low thermal resistance maximum rated values 1) parameter symbol conditions min max unit collector-emitter voltage v ces v ge = 0 v 4500 v dc collector current i c t c = 85 c 1200 a peak collector current i cm t p = 1 ms, t c = 85 c 2400 a gate-emitter voltage v ges -20 20 v total power dissipation p tot t c = 25 c, per switch (igbt) 10500 w dc forward current i f 1200 a peak forward current i frm 2400 a surge current i fsm v r = 0 v, t vj = 125 c, t p = 10 ms, half-sinewave 9000 a igbt short circuit soa t psc v cc = 3400 v, v cem chip 4500 v v ge 15 v, t vj 125 c 10 s isolation voltage v isol 1 min, f = 50 hz 7400 v junction temperature t vj 125 c junction operating temperature t vj(op) -40 125 c case temperature t c -40 125 c storage temperature t stg -40 125 c m s base-heatsink, m6 screws 4 6 m t1 main terminals, m8 screws 8 10 mounting torques 2) m t2 auxiliary terminals, m4 screws 2 3 nm 1) maximum rated values indicate limits beyond which damage to the device may occur per iec 60747 2) for detailed mounting instructions refer to abb document no. 5sya2039 abb hipak tm igbt module 5sna 1200g450300
5sna 1200g450300 abb switzerland ltd, semiconductors reserves the right to change specifications without notice. doc. no. 5sya 1401-01 mar 09 page 2 of 9 igbt characteristic values 3) parameter symbol conditions min typ max unit collector (-emitter) breakdown voltage v (br)ces v ge = 0 v, i c = 10 ma, t vj = 25 c 4500 v t vj = 25 c 2.6 v collector-emitter 4) saturation voltage v ce sat i c = 1200 a, v ge = 15 v t vj = 125 c 3.55 v t vj = 25 c 12 ma collector cut-off current i ces v ce = 4500 v, v ge = 0 v t vj = 125 c 120 ma gate leakage current i ges v ce = 0 v, v ge = 20 v, t vj = 125 c -500 500 na gate-emitter threshold voltage v ge(to) i c = 240 ma, v ce = v ge , t vj = 25 c 4.5 6.5 v gate charge q ge i c = 1200 a, v ce = 2800 v, v ge = -15 v .. 15 v 8.86 c input capacitance c ies 120 output capacitance c oes 6.02 reverse transfer capacitance c res v ce = 25 v, v ge = 0 v, f = 1 mhz, t vj = 25 c 2.58 nf t vj = 25 c 740 turn-on delay time t d(on) t vj = 125 c 750 ns t vj = 25 c 210 rise time t r v cc = 2800 v, i c = 1200 a, r g = 1.5 w , c ge = 220 nf, v ge = 15 v, l s = 150 nh, inductive load t vj = 125 c 230 ns t vj = 25 c 2280 turn-off delay time t d(off) t vj = 125 c 2470 ns t vj = 25 c 600 fall time t f v cc = 2800 v, i c = 1200 a, r g = 1.5 w , c ge = 220 nf, v ge = 15 v, l s = 150 nh, inductive load t vj = 125 c 660 ns t vj = 25 c 3080 turn-on switching energy e on v cc = 2800 v, i c = 1200 a, r g = 1.5 w , c ge = 220 nf, v ge = 15 v, l s = 150 nh, inductive load t vj = 125 c 4350 mj t vj = 25 c 4960 turn-off switching energy e off v cc = 2800 v, i c = 1200 a, r g = 1.5 w , c ge = 220 nf, v ge = 15 v, l s = 150 nh, inductive load t vj = 125 c 6000 mj short circuit current i sc t psc 10 s, v ge = 15 v, t vj = 125 c, v cc = 3400 v, v cem chip 4500 v 5200 a module stray inductance l s ce 18 nh t c = 25 c 0.07 resistance, terminal-chip r cc?+ee? t c = 125 c 0.1 m ? 3) characteristic values according to iec 60747 ? 9 4) collector-emitter saturation voltage is given at chip level
5sna 1200g450300 abb switzerland ltd, semiconductors reserves the right to change specifications without notice. doc. no. 5sya 1401-01 mar 09 page 3 of 9 diode characteristic values 5) parameter symbol conditions min typ max unit t vj = 25 c 3.2 forward voltage 6) v f i f = 1200 a t vj = 125 c 3.5 v t vj = 25 c 1460 reverse recovery current i rr t vj = 125 c 1600 a t vj = 25 c 1030 recovered charge q rr t vj = 125 c 1660 c t vj = 25 c 1270 reverse recovery time t rr t vj = 125 c 1860 ns t vj = 25 c 1630 reverse recovery energy e rec v cc = 2800 v, i f = 1200 a, v ge = 15 v, r g = 1.5 w , c ge = 220 nf, l s = 150 nh inductive load t vj = 125 c 2730 mj 5) characteristic values according to iec 60747 ? 2 6) forward voltage is given at chip level package properties 7) parameter symbol conditions min typ max unit igbt thermal resistance junction to case r th(j-c)igbt 0.0095 k/w diode thermal resistance junction to case r th(j-c)diode 0.019 k/w igbt thermal resistance 2) case to heatsink r th(c-s)igbt igbt per switch, l grease = 1w/m x k 0.009 k/w diode thermal resistance 7) case to heatsink r th(c-s)diode diode per switch, l grease = 1w/m x k 0.018 k/w partial discharge extinction voltage v e f = 50 hz, q pd 10pc (acc. to iec 61287) 3500 v comparative tracking index cti 3 600 2) for detailed mounting instructions refer to abb document no. 5sya2039 mechanical properties 7) parameter symbol conditions min typ max unit dimensions l x w x h typical , see outline drawing 190 x 140 x 48 mm term. to base: 40 clearance distance in air d a according to iec 60664-1 and en 50124-1 term. to term: 26 mm term. to base: 64 surface creepage distance d s according to iec 60664-1 and en 50124-1 term. to term: 56 mm mass m 1760 g 7) package and mechanical properties according to iec 60747 ? 15
5sna 1200g450300 abb switzerland ltd, semiconductors reserves the right to change specifications without notice. doc. no. 5sya 1401-01 mar 09 page 4 of 9 electrical configuration 5 7 9 4 6 8 2 1 3 outline drawing 2) note: all dimensions are shown in mm 2) for detailed mounting instructions refer to abb document no. 5sya2039 this is an electrostatic sensitive device, please observe the international standard iec 60747-1, chap. ix. this product has been designed and qualified for industrial level.
5sna 1200g450300 abb switzerland ltd, semiconductors reserves the right to change specifications without notice. doc. no. 5sya 1401-01 mar 09 page 5 of 9 0 400 800 1200 1600 2000 2400 0 1 2 3 4 5 6 v ce [v] i c [ a ] 125 c 25 c v ge = 15v 0 400 800 1200 1600 2000 2400 0 1 2 3 4 5 6 7 8 9 10111213 v ge [v] i c [ a ] v ce = 20 v 125 c 25 c fig. 1 typical on-state characteristics, chip level fig. 2 typical transfer characteristics, chip level 0 400 800 1200 1600 2000 2400 0 1 2 3 4 5 v cesat [v] i c [ a ] 9 v 11 v 13 v 15 v 17 v t vj = 25 c 0 400 800 1200 1600 2000 2400 0 1 2 3 4 5 6 v cesat [v] i c [ a ] 9 v 11 v 13 v 15 v 17 v t vj = 125 c fig. 3 typical output characteristics, chip level fig. 4 typical output characteristics, chip level
5sna 1200g450300 abb switzerland ltd, semiconductors reserves the right to change specifications without notice. doc. no. 5sya 1401-01 mar 09 page 6 of 9 0 1 2 3 4 5 6 7 8 9 10 11 12 0 400 800 1200 1600 2000 2400 i c [a] e o n , e o f f [ j ] v cc = 2800 v v ge = 15 v r g = 1.5 ohm c ge = 220 nf t vj = 125 c l s = 150 nh e on e off e sw [j] = 1.2 x 10 -6 x i c 2 + 6.1 x10 -3 x i c + 1.08 0 2 4 6 8 10 12 14 16 0 1 2 3 4 5 6 7 8 9 10 11 r g [ohm] e o n , e o f f [ j ] v cc = 2800 v i c = 1200 a v ge = 15 v c ge = 220 nf t vj = 125 c l s = 150 nh e on e off fig. 5 typical switching energies per pulse vs collector current fig. 6 typical switching energies per pulse vs gate resistor 0.01 0.1 1 10 0 400 800 1200 1600 2000 2400 i c [a] t d ( o n ) , t r , t d ( o f f ) , t f [ s ] v cc = 2800 v v ge = 15 v r g = 1.5 ohm c ge = 220 nf t vj = 125 c l s = 150 nh t d(on) t d(off) t r t f 0.01 0.1 1 10 0 1 2 3 4 5 6 7 8 9 10 11 r g [ohm] t d ( o n ) , t r , t d ( o f f ) , t f [ s ] v cc = 2800 v i c = 1200 a v ge = 15 v c ge = 220 nf t vj = 125 c l s = 150 nh t d(on) t d(off) t f t r fig. 7 typical switching times vs collector current fig. 8 typical switching times vs gate resistor
5sna 1200g450300 abb switzerland ltd, semiconductors reserves the right to change specifications without notice. doc. no. 5sya 1401-01 mar 09 page 7 of 9 1 10 100 1000 0 5 10 15 20 25 30 35 v ce [v] c [ n f ] c ies c oes c res v ge = 0 v f osc = 1 mhz v osc = 50 mv 0 5 10 15 20 0 1 2 3 4 5 6 7 8 q g [c] v g e [ v ] i c = 1200 a t vj = 25 c v cc = 3600 v v cc = 2800 v fig. 9 typical capacitances vs collector-emitter voltage fig. 10 typical gate charge characteristics 0 0.5 1 1.5 2 2.5 0 1000 2000 3000 4000 5000 v ce [v] i c p u l s e / i c chip module v cc 3400 v, t vj = 125 c, v ge = 15 v r g = 1.5 ohm, c ge = 220 nf, l s 150 nh fig. 11 turn-off safe operating area (rbsoa)
5sna 1200g450300 abb switzerland ltd, semiconductors reserves the right to change specifications without notice. doc. no. 5sya 1401-01 mar 09 page 8 of 9 0 500 1000 1500 2000 2500 3000 3500 4000 0 400 800 1200 1600 2000 2400 i f [a] e r e c [ m j ] , i r r [ a ] , q r r [ c ] v cc = 2800 v v ge = 15 v r g = 1.5 ohm c ge = 220 nf t vj = 125 c l s = 150 nh e rec i rr q rr e rec [mj] = -5.25 x 10 -4 x i f 2 + 2.61 x i f + 375 0 500 1000 1500 2000 2500 3000 3500 0 1 2 3 4 5 6 7 di/dt [ka/s] e r e c [ m j ] , q r r [ c ] , i r r [ a ] v cc = 2800 v i f = 1200 a v ge = 15 v c ge = 220 nf t vj = 125 c l s = 150 nh r g = 6 . 8 o h m r g = 4 . 7 o h m r g = 3 . 3 o h m r g = 2 . 2 o h m r g = 1 . 5 o h m r g = 1 o h m e rec q rr i rr fig. 12 typical reverse recovery characteristics vs forward current fig. 13 typical reverse recovery characteristics vs di/dt 0 400 800 1200 1600 2000 2400 0 1 2 3 4 5 v f [v] i f [ a ] 125 c 25 c 0 400 800 1200 1600 2000 2400 0 1000 2000 3000 4000 5000 v r [v] i r [ a ] v cc 3400 v di/dt 6500 a/s t vj = 125 c l s 150 nh fig. 14 typical diode forward characteristics, chip level fig. 15 safe operating area diode (soa)
5sna 1200g450300 abb switzerland ltd, semiconductors reserves the right to change specifications without notice. abb switzerland ltd doc. no. 5sya 1401-01 mar 09 semiconductors fabrikstrasse 3 ch-5600 lenzburg, switzerland telephone +41 (0)58 586 1419 fax +41 (0)58 586 1306 email abbsem@ch.abb.com internet www.abb.com/semiconductors analytical function for transient thermal impedance: ) e - (1 r = (t) z n 1 i t/ - i c) - (j th ? = i t i 1 2 3 4 5 r i (k/kw) 6.36 2.11 1.04 i g b t t i (ms) 193 21.4 2.78 r i (k/kw) 12.5 4.37 2.16 d i o d e t i (ms) 192 22.6 3.1 0.0001 0.001 0.01 0.1 0.001 0.01 0.1 1 10 t [s] z t h ( j - c ) [ k / w ] i g b t , d i o d e z th(j-c) igbt z th(j-c) diode fig. 16 thermal impedance vs time for detailed information refer to: 5sya 2042 failure rates of hipak modules due to cosmic rays 5sya 2043 load ? cycle capability of hipaks 5sya 2045 thermal runaway during blocking 5sya 2053 applying igbt 5szk 9120 specification of environmental class for hipak
|
