the information in this document is subject to change without notice. before using this document, please confirm that this is the latest version. not all products and/or types are available in every country. please check with an nec electronics sales representative for availability and additional information. mos field effect transistor n0300p p-channel mos field effect transistor for switching data sheet document no. d19782ej1v0ds00 (1st edition) date published april 2009 ns printed in japan 2009 description the n0300p is a switching device which can be driven directly by a 4.5 v power source. the device features a low on-st ate resistance and excellent switching characteristics, and is suitable for applications such as power switch of portable machine and so on. features ? 4.5 v drive available ? low on-state resistance r ds(on)1 = 72 m max. (v gs = ? 10 v, i d = ? 2.0 a) r ds(on)2 = 105 m max. (v gs = ? 4.5 v, i d = ? 2.0 a) ? built-in gate protection diode ordering information part number package N0300P-T1B-AT note sc-96 (mini mold thin type) note pb-free (this product does not contain pb in the external electrode and other parts.) marking: xz absolute maximum ratings (t a = 25 c) drain to source voltage (v gs = 0 v) v dss ? 30 v gate to source voltage (v ds = 0 v) v gss m 20 v drain current (dc) i d(dc) m 4.5 a drain current (pulse) note1 i d(pulse) m 18 a total power dissipation p t1 0.2 w total power dissipation note2 p t2 1.25 w channel temperature t ch 150 c storage temperature t stg ? 55 to + 150 c notes 1. pw 10 s, duty cycle 1% 2. mounted on fr-4 board of 50 mm x 50 mm x 1.6 mmt, t 5 sec remark the diode connected between the gate and source of the transistor serves as a protector against esd. when this device actually used, an additional pr otection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device. package drawing (unit: mm) 0.65 0.9 to 1.1 0 to 0.1 0.16 +0.1 ?0.06 0.4 +0.1 ?0.05 2.8 0.2 1.5 0.95 1.9 2.9 0.2 0.95 0.65 +0.1 ?0.15 1. gate 2. source 3. drain 2 1 3 equivalent circuit source body diode gate protection diode gate drain
data sheet d19782ej1v0ds 2 n0300p electrical characteristics (t a = 25 c) characteristics symbol test cond itions min. typ. max. unit zero gate voltage drain current i dss v ds = ? 30 v, v gs = 0 v ? 1 a gate leakage current i gss v gs = m 16 v, v ds = 0 v m 10 a gate to source cut-off voltage v gs(off) v ds = ? 10 v, i d = ? 1.0 ma ? 1.0 ? 2.5 v forward transfer admittance note | y fs | v ds = ? 10 v, i d = ? 1.5 a 1.0 s r ds(on)1 v gs = ? 10 v, i d = ? 2.0 a 56 72 m drain to source on-state resistance note r ds(on)2 v gs = ? 4.5 v, i d = ? 2.0 a 75 105 m input capacitance c iss v ds = ? 10 v, 345 pf output capacitance c oss v gs = 0 v, 78 pf reverse transfer capacitance c rss f = 1.0 mhz 65 pf turn-on delay time t d(on) v dd = ? 15 v, i d = ? 2.0 a, 6.5 ns rise time t r v gs = ? 10 v, 4.0 ns turn-off delay time t d(off) r g = 6 34 ns fall time t f 12 ns total gate charge q g v dd = ? 24 v, v gs = ? 10.0 v, i d = ? 4.5 a 8.3 nc body diode forward voltage note v f(s-d) i f = 4.5 a, v gs = 0 v 0.95 v note pulsed test circuit switching time pg. r g 0 v gs ( ? ) d.u.t. r l v dd = 1 s duty cycle 1% v gs wave form i d wave form v gs ( ? ) 10% 90% v gs 10% 0 i d ( ? ) 90% 90% t d(on) t r t d(off) t f 10% i d 0 t on t off
data sheet d19782ej1v0ds 3 n0300p typical characteristics (t a = 25 c) derating factor of forward bias safe operating area total power dissipation vs. ambient temperature dt - percentage of rated power - % 0 20 40 60 80 100 120 0 25 50 75 100 125 150 175 t a - ambient temperature - c p t - total power dissipation - w 0 0.25 0.5 0.75 1 1.25 1.5 0 25 50 75 100 125 150 175 mounted on fr-4 board of 50 mm x 50 mm x 1.6 mmt t a - ambient temperature - c forward bias safe operating area i d - drain current - a -0.01 -0.1 -1 -10 -100 -0.1 -1 -10 -100 i d(pulse) i d(dc) mounted on fr-4 board of 50 mm x 50 mm x 1.6 mmt 1 ms r d s ( o n ) l i m i t e d ( v g s = ? 1 i 0 v ) single pulse p w = 1 i 0 0 s 10 ms 100 ms 5 s v ds - drain to source voltage - v transient thermal resistance vs. pulse width r th(ch-a) - transient thermal resistance - c/w 1 10 100 1000 without board mounted on fr-4 board of 50 mm x 50 mm x 1.6 mmt single pulse pw - pulse width - s 1 m 10 m 100 m 1 10 100 1000
data sheet d19782ej1v0ds 4 n0300p drain current vs. drain to source voltage forward transfer characteristics i d - drain current - a 0 -2 -4 -6 -8 -10 -12 -14 -16 -18 0 -0.4 -0.8 -1.2 -1.6 -2 pulsed v gs = ? 4.5 v ? 10 v v ds - drain to source voltage - v i d - drain current - a -0.001 -0.01 -0.1 -1 -10 -100 0 -1-2-3-4 v ds = ? 10 v pulsed t a = 125 c 75 c 25 c ? 25 c v gs - gate to source voltage - v gate to source cut-off voltage vs. channel temperature forward transfer admittance vs. drain current v gs(off) - gate to source cut-off voltage - v 0 -0.5 -1 -1.5 -2 -2.5 -3 -50 -25 0 25 50 75 100 125 150 175 v ds = ? 10 v i d = ? 1.0 ma t ch - channel temperature - c | y fs | - forward transfer admittance - s 0.01 0.1 1 10 100 -0.001 -0.01 -0.1 -1 -10 -100 v ds = ? 10 v pulsed t a = -25 c 25 c 75 c 125 c i d - drain current - a drain to source on-state resistance vs. drain current drain to source on-state resistance vs. gate to source voltage r ds(on) - drain to source on-state resistance - m 0 20 40 60 80 100 120 140 160 180 200 -0.1 -1 -10 -100 pulsed v gs = ? 4.5 v ? 10 v i d - drain current - a ds(on) - drain to source on-state resistance - m 0 20 40 60 80 100 120 140 160 180 200 0-4-8-12-16 i d = ? 2.0 a pulsed v gs - gate to source voltage - v
data sheet d19782ej1v0ds 5 n0300p drain to source on-state resistance vs. channel temperature capacitance vs. drain to source voltage r ds(on) - drain to source on-state resistance - m 0 20 40 60 80 100 120 140 -50 -25 0 25 50 75 100 125 150 175 v gs = ? 4.5 v ? 10 v i d = ? 2.0 a pulsed t ch - channel temperature - c c iss , c oss , c rss - capacitance - pf 10 100 1000 -0.01 -0.1 -1 -10 -100 c iss c oss c rss v gs = 0 v f = 1.0 mhz v ds - drain to source voltage - v switching characteristics dynamic input/output characteristics t d(on) , t r , t d(off) , t f - switching time - ns 1 10 100 -0.01 -0.1 -1 -10 -100 t d(off) v dd = ? 15 v v gs = ? 10 v r g = 6 t d(on) t f t r i d - drain current - a v ds - drain to source voltage - v 0 -5 -10 -15 -20 -25 012345678 0 -2 -4 -6 -8 -10 v ds v gs i d = ? 4.5 a v dd = ? 24 v ? 15 v ? 6 v q g - gate charge - nc v gs - gate to source voltage - v source to drain diode forward voltage i f - diode forward current - a -0.0001 -0.001 -0.01 -0.1 -1 -10 -100 00.511.5 v gs = 0 v pulsed v f(s-d) - source to drain voltage - v
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