note: all specifications are subject to change without notification. scd's for these devices should be reviewed by ssdi prior to release. data sheet #: pm0027a doc spmq613-01 solid state devices, inc. 14701 firestone blvd * la mirada, ca 90638 phone: (562) 404-4474 * fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com 600v, 200a fast switching igbt half bridge designer?s data shee t features: ? hermetic construction, electrically isolated from the heatsinking baseplate ? fast switching ? single igbt die (no paralleling) with ultrafast freewheeling diode ? low switching and conduction losses ? tx, txv, and space level screening available part number/ordering information 1 / spmq613-01 __ screening 2 / __ = not screened tx = tx level txv = txv level s = s level maximum ratings 3 / symbol value unit collector ? emitter breakdown voltage v ces 600 v gate ? emitter voltage v ges 20 v max. continuous collector current @ t c = 25oc @ t c = 90oc i c1 i c2 200 100 a pulsed collector current i cm 300 a clamped inductive load current (t j = 125oc) i lm 100 a reverse voltage avalanche energy (i c = 100a) e arv 5.6 mj operating & storage temperature t op & t stg -55 to +150 oc maximum thermal resistance (junction to case) per switch r 0 jc 0.50 oc/w total device dissipation @ t c = 25oc dissipation derating from @ t c = 25oc to t c = 150oc p d1 p d2 250 2 w w/oc notes: 1 / for ordering information, price, and availability- contact factory. 2 / screening based on mil-prf-19500. screening flows available on request. 3 / unless otherwise specified, all electrical characteristics @25oc.
note: all specifications are subject to change without notification. scd's for these devices should be reviewed by ssdi prior to release. data sheet #: pm0027a doc spmq613-01 solid state devices, inc. 14701 firestone blvd * la mirada, ca 90638 phone: (562) 404-4474 * fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com electrical characteristics 3 / symbol min typ max unit collecto r - emitter breakdo w n voltage (i ces = 250 a, v ge = 0v) bv ces 600 670 ?? v gate - emitter threshold voltage ( i c = 0.25ma, v ce = v ge ) t a = 25 o c t a = 125 o c t a = -55 o c vge (th) 2.5 - - 5.2 5.0 6.0 6 - - v collector - emitter saturation voltage i c = 100a @ 25 o c i c = 150a @ 25 o c i c = 200a @ 25 o c i c = 300a @ 25 o c i c = 100a @ 125 o c i c = 200a @ 125 o c i c = 300a @ 125 o c i c = 100a @ -55 o c i c = 200a @ -55 o c i c = 300a @ -55 o c vce (on) ?? ?? 1.70 2.15 2.35 3.00 1.65 2.20 2.70 1.70 2.25 2.90 2.4 - - - 2.2 - - - - - v gate - emitter leakage current (v ge = 20v, v ce = 0v) t a = 25 o c t a = 125 o c t a = -55 o c i ges ?? 0.01 0.05 0.005 1.0 10 - a collector leakage current (v ce = 600 v, v ge = 0v) t a = 25 o c t a = 125 o c t a = -55 o c i ces1 i ces2 i ces3 ?? ?? ?? 25 7 2.5 200 ?? - a ma a forward transconductance (i c = i c2 , v ce = 10v) g fs 20 ?? ?? s gate charge total gate charge gate-emitter charge gate-collector charge v ge = 15v i c = 10a v ce = 300v q g(on) q ge q gc ?? ?? ?? 575 70 320 650 150 370 nc capacitance input capacitance output capacitance reverse transfer capacitance v ge = 0v v ce = 25v f = 1 mhz c ies c oes c res ?? ?? ?? 84001 400 600 10,000 2,000 1,000 pf resistive switching turn-on delay time rise time turn-off delay time fall time v cc = 300v v ge = 15v i c = 40a t d(on) t r t d(off) t f ?? ?? ?? ?? 150 550 550 2000 - - - - nsec inductive switching turn-on delay time rise time turn-off delay time fall time v cc = 300v v ge = 15v i c = 45a r g = 10 ? l = 100h t d(on) t r t d(off) t f ?? ?? ?? ?? 150 140 600 300 500 175 1000 500 nsec anti-parallel diode peak curren t i pk ?? ?? 200 a peak inverse voltage piv ?? ?? 600 v average curren t i avg ?? ?? 100 a diode forward voltage @ if=100a, tj=25 o c i f = 100a, t a = 25 o c i f = 300a, t a = 25 o c i f = 300a, t a = -55 o c i f = 300a, t a = 125 o c vf ?? 1.1 1.6 1.8 1.4 1.5 - - - v reverse recovery time (if=40a, di/dt=200a/sec) trr ?? 200 2000 nsec
note: all specifications are subject to change without notification. scd's for these devices should be reviewed by ssdi prior to release. data sheet #: pm0027a doc spmq613-01 solid state devices, inc. 14701 firestone blvd * la mirada, ca 90638 phone: (562) 404-4474 * fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com case outline: aspm
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