bcw60 series vishay semiconductors formerly general semiconductor document number 88170 www.vishay.com 09-may-02 1 new product small signal transistors (npn) features ?npn silicon epitaxial planar transistors ?suited for low level, low noise, low frequency applications in hybrid cicuits. ?low current, low voltage. ?as complementary types, bcw61 series pnp transistors are recommended. mechanical data case: sot-23 plastic package weight: approx. 0.008g marking bcw60a = aa code: bcw60b = ab bcw60c = ac bcw60d = ad packaging codes/options: e8/10k per 13 reel (8mm tape), 30k/box e9/3k per 7 reel (8mm tape), 30k/box .016 (0.4) .056 (1.43 ) .037(0.95) .037(0.95) max. .004 (0.1) .122 (3.1) .016 (0.4) .016 (0.4) 1 2 3 top view .102 (2.6) .007 (0.175) .045 (1.15) .110 (2.8) .052 (1.33 ) .005 (0.125) .094 (2.4) .037 (0.95) to-236ab (sot-23) dimensions in inches and (millimeters) maximum ratings & thermal characteristics ratings at 25 c ambient temperature unless otherwise specified. parameter symbol value unit collector-emitter voltage (v be =0) v ces 32 v collector-emitter voltage v ceo 32 v emitter-base voltage v ebo 5.0 v collector current (dc) i c 100 ma peak collector current i cm 200 ma base current (dc) i b 50 ma power dissipation p tot 250 mw maximum junction temperature t j 150 c storage temperature range t s 65 to +150 c thermal resistance junction to ambient air r ja 500 (1) c/w note: (1) mounted on fr-4 printed-ciruit board. 0.079 (2.0) 0.037 (0.95) 0.035 (0.9) 0.031 (0.8) 0.037 (0.95) mounting pad layout pin configuration 1. base 2. emitter 3. collector
bcw60 series vishay semiconductors formerly general semiconductor www.vishay.com document number 88170 2 09-may-02 electrical characteristics ratings at 25 c ambient temperature unless otherwise specified. parameter symbol min. typ. max. unit dc current gain at v ce = 5v, i c = 10 a bcw60a h fe at v ce = 5v, i c = 10 a bcw60b h fe 20 at v ce = 5v, i c = 10 a bcw60c h fe 40 at v ce = 5v, i c = 10 a bcw60d h fe 100 at v ce = 5v, i c = 2 ma bcw60a h fe 120 220 at v ce = 5v, i c = 2 ma bcw60b h fe 180 310 at v ce = 5v, i c = 2 ma bcw60c h fe 250 460 at v ce = 5v, i c = 2 ma bcw60d h fe 380 630 at v ce = 1v, i c = 50 ma bcw60a h fe 50 at v ce = 1v, i c = 50 ma bcw60b h fe 70 at v ce = 1v, i c = 50 ma bcw60c h fe 90 at v ce = 1v, i c = 50 ma bcw60d h fe 100 collector-emitter saturation voltage at i c = 10 ma, i b = 0.25 ma v cesat 50 350 mv at i c = 50 ma, i b = 1.25 ma v cesat 100 550 mv base-emitter saturation voltage at i c = 10 ma, i b = 0.25 ma v besat 600 850 mv at i c = 50 ma, i b = 1.25 ma v besat 700 1050 mv base-emitter voltage at v ce = 5v, i c = 2 ma v be 550 650 750 mv at v ce = 5v, i c = 10 av be 520 mv at v ce = 1v, i c = 50 ma v be 780 mv collector-emitter cut-off current at v ce = 32v, v be = 0v i ces 20 na at v ce = 32v, v be = 0v, t a = 150 c 20 a emitter-base cut-off current at v eb = 4v, i c = 0 i ebo 20 na gain-bandwidth product at v ce = 5v, i c = 10 ma, f = 100 mhz f t 100 250 mhz collector-base capacitance at v cb = 10v, f = 1 mh z, i e =0 c cbo 2.5 pf emitter-base capacitance at v eb = 0.5v, f = 1 mh z , i c =0 c ebo 8 pf noise figure at v ce = 5v, i c = 200 a, r s = 2 k ? , f = 1khz, b = 200hz f 26db small signal current gain bcw60a 200 at v ce = 5v, i c = 2 ma, f = 1.0 kh z bcw60b 260 bcw60c h fe 330 bcw60d 520 turn-on time at r l = 990 ? (see fig. 1) v cc = 10v, ic = 10ma, i b(on) = i b(off) = 1ma t on 85 150 ns turn-off time at r l = 990 ? (see fig. 1) v cc = 10v, ic = 10ma, i b(on) = i b(off) = 1ma t off 480 800 ns
bcw60 series vishay semiconductors formerly general semiconductor document number 88170 www.vishay.com 09-may-02 3 90% 10% 90% 90% 10% 10% t off t s t f t r t d t on input output fig. 1 - switching waveforms
|
