FDMS7556S n-channel power trench ? syncfet tm ?2009 fairchild semiconductor corporation FDMS7556S rev.c1 www.fairchildsemi.com 1 september 2010 FDMS7556S n-channel powertrench ? syncfet tm 25 v, 49 a, 1.2 m features ? max r ds(on) = 1.2 m at v gs = 10 v, i d = 35 a ? max r ds(on) = 1.65 m at v gs = 4.5 v, i d = 31 a ? advanced package and silic on combination for low r ds(on) and high efficiency ? syncfet schottky body diode ? msl1 robust package design ? 100% uil tested ? rohs compliant general description the FDMS7556S has been designed to minimize losses in power conversion application. advancements in both silicon and package technologies have been combined to offer the lowest r ds(on) while maintaining excellent switching performance. this device has the added benefit of an efficient monolithic schottky body diode. applications ? synchronous rectifier for synchronous buck converters ? notebook ? server ? telecom ? high efficiency dc-dc switch mode power supplies mosfet maximum ratings t c = 25 c unless otherwise noted thermal charac teristics package marking and ordering information symbol parameter ratings units v ds drain to source voltage 25 v v gs gate to source voltage (note 4) 20 v i d drain current -continuous (p ackage limited) t c = 25 c 49 a -continuous (silicon limited) t c = 25 c 222 -continuous t a = 25 c (note 1a) 35 -pulsed 200 e as single pulse avalanche energy (note 3) 312 mj p d power dissipation t c = 25 c 96 w power dissipation t a = 25 c (note 1a) 2.5 t j , t stg operating and storage junction temperature range -55 to +150 c r jc thermal resistance, junction to case 1.3 c/w r ja thermal resistance, junction to ambient (note 1a) 50 device marking device package reel size tape width quantity FDMS7556S FDMS7556S power 56 13 ?? 12 mm 3000 units 4 3 2 1 5 6 7 8 power 56 d d d d s s s g d d d d g s s s pin 1 bottom top
FDMS7556S n-channel power trench ? syncfet tm www.fairchildsemi.com 2 FDMS7556S rev.c1 electrical characteristics t a = 25 c unless otherwise noted symbol parameter test conditions min typ max units off characteristics bv dss drain to source breakdown voltage i d = 1 ma, v gs = 0 v 25 v ' bv dss ' t j breakdown voltage temperature coefficient i d = 10 ma, referenced to 25 c 22 mv/ c i dss zero gate voltage drain current v ds = 20 v, v gs = 0 v 500 p a i gss gate to source leakage current, forward v gs = 20 v, v ds = 0 v 100 na on characteristics v gs(th) gate to source threshold voltage v gs = v ds , i d = 1 ma 1.2 1.6 3.0 v ' v gs(th) ' t j gate to source threshold voltage temperature coefficient i d = 10 ma, referenced to 25 c - 5 mv/ c r ds(on) static drain to source on resistance v gs = 10 v, i d = 35 a 0.95 1.2 m : v gs = 4.5 v, i d = 31 a 1.3 1.65 v gs = 10 v, i d = 35 a, t j = 125 c 1.2 1.6 g fs forward transconductance v ds = 5 v, i d = 35 a 212 s dynamic characteristics c iss input capacitance v ds = 1 3 v, v gs = 0 v, f = 1 mhz 6740 8965 pf c oss output capacitance 1940 2580 pf c rss reverse transfer capacitance 314 475 pf r g gate resistance 0.6 1.3 : switching characteristics t d(on) turn-on delay time v dd = 13 v, i d = 35 a, v gs = 10 v, r gen = 6 : 20 36 ns t r rise time 9 1 8 ns t d(off) turn-off delay time 48 77 ns t f fall time 5.3 11 ns q g total gate charge v gs = 0 v to 10 v v dd = 1 3 v i d = 35 a 95 133 nc q g total gate charge v gs = 0 v to 4.5 v 43 60 nc q gs gate to source gate charge 18.6 nc q gd gate to drain ?miller? charge 8.8 nc drain-source diod e characteristics v sd source to drain diode forward voltage v gs = 0 v, i s = 2 a (note 2) 0.37 0.7 v v gs = 0 v, i s = 35 a (note 2) 0.74 1.2 t rr reverse recovery time i f = 35 a, di/dt = 300 a/ p s 44 71 ns q rr reverse recovery charge 68 109 nc notes : 1. r t ja is determined with the device mounted on a 1in 2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of fr-4 material. r t jc is guaranteed by design while r t ca is determined by the user's board design. 2. pulse test: pulse width < 300 p s, duty cycle < 2.0%. 3. e as of 312 mj is based on starting t j = 25 c, l = 1 mh, i as = 25 a, v dd = 23 v, v gs = 10 v. 100% test at l = 0.3 mh, i as = 38 a. 4. as an n-ch device, the negative vgs rating is for low duty cycle pulse occurrence only. no continuous rating is implied. a. 50 c/w when mounted on a 1 in 2 pad of 2 oz copper. b. 125 c/w when mounted on a minimum pad of 2 oz copper.
FDMS7556S n-channel power trench ? syncfet tm www.fairchildsemi.com 3 FDMS7556S rev.c1 typical characteristics t j = 25 c unless otherwise noted figure 1. 0 0.5 1.0 1.5 2.0 0 40 80 120 160 200 v gs = 3.5 v v gs = 4.5 v v gs = 10 v pulse duration = 80 p s duty cycle = 0.5% max v gs = 2.5 v v gs = 3 v i d , drain current (a) v ds , drain to source voltage (v) on-region characteristics figure 2. 0 40 80 120 160 200 0 2 4 6 8 10 12 14 v gs = 4.5 v v gs = 2.5 v pulse duration = 80 p s duty cycle = 0.5% max normalized drain to source on-resistance i d , drain current (a) v gs = 3 v v gs = 3.5 v v gs = 10 v n o r m a l i z e d o n - r e s i s t a n c e vs drain current and gate voltage f i g u r e 3 . n o r m a l i z e d o n - r e s i s t a n c e -75 -50 -25 0 25 50 75 100 125 150 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5 i d = 35 a v gs = 10 v normalized drain to source on-resistance t j , junction temperature ( o c ) vs junction temperature figure 4. 24681 0 0 1 2 3 4 t j = 125 o c i d = 35 a t j = 25 o c v gs , gate to source voltage (v) r ds(on) , drain to source on-resistance ( m : ) pulse duration = 80 p s duty cycle = 0.5% max o n - r e s i s t a n c e v s g a t e t o source voltage figure 5. transfer characteristics 1.0 1.5 2.0 2.5 3.0 3.5 0 40 80 120 160 200 t j = 125 o c v ds = 5 v pulse duration = 80 p s duty cycle = 0.5% max t j = -55 o c t j = 25 o c i d , drain current (a) v gs , gate to source voltage (v) figure 6. 0.0 0.2 0.4 0.6 0.8 1.0 0.01 0.1 1 10 100 200 t j = -55 o c t j = 25 o c t j = 125 o c v gs = 0 v i s , reverse drain current (a) v sd , body diode forward voltage (v) s o u r c e t o d r a i n d i o d e forward voltage vs source current
FDMS7556S n-channel power trench ? syncfet tm www.fairchildsemi.com 4 FDMS7556S rev.c1 figure 7. 0 20406080100 0 2 4 6 8 10 i d = 35 a v dd = 16 v v dd = 10 v v gs , gate to source voltage (v) q g , gate charge (nc) v dd = 13 v gate charge characteristics figure 8. 0.1 1 10 30 100 1000 10000 f = 1 mhz v gs = 0 v capacitance (pf) v ds , drain to source voltage (v) c rss c oss c iss c a p a c i t a n c e v s d r a i n to source voltage figure 9. 0.01 0.1 1 10 100 1000 1 10 50 t j = 100 o c t j = 25 o c t j = 125 o c t av , time in avalanche (ms) i as , avalanche current (a) u n c l a m p e d i n d u c t i v e switching capability figure 10. 25 50 75 100 125 150 0 45 90 135 180 225 limited by package v gs = 4.5 v r t jc = 1.3 o c/w v gs = 10 v i d , drain current (a) t c , case temperature ( o c ) m a x i m u m c o n t i n u o u s d r a i n current vs case temperature f i g u r e 1 1 . f o r w a r d b i a s s a f e op erating area 0.01 0.1 1 10 100 0.01 0.1 1 10 100 300 1ms 10 ms 100 ms dc 10 s 1 s i d , drain current (a) v ds , drain to source voltage (v) this area is limited by r ds(on) single pulse t j = max rated r t ja = 125 o c/w t a = 25 o c f i g u r e 1 2 . s i n g l e p u l s e m a x i m u m power dissipation 10 -3 10 -2 10 -1 110 100 1000 0.5 1 10 100 1000 v gs = 10v p (pk) , peak transient power (w) single pulse r t ja = 125 o c/w t a = 25 o c t, pulse width (sec) typical characteristics t j = 25 c unless otherwise noted
FDMS7556S n-channel power trench ? syncfet tm www.fairchildsemi.com 5 FDMS7556S rev.c1 figure 13. junction-to-ambient transient thermal response curve 10 -3 10 -2 10 -1 11 0 100 1000 0.001 0.01 0.1 1 single pulse r t ja = 125 o c/w duty cycle-descending order normalized thermal impedance, z t ja t, rectangular pulse duration (sec) d = 0.5 0.2 0.1 0.05 0.02 0.01 2 p dm t 1 t 2 notes: duty factor: d = t 1 /t 2 peak t j = p dm x z t ja x r t ja + t a typical characteristics t j = 25 c unless otherwise noted
FDMS7556S n-channel power trench ? syncfet tm www.fairchildsemi.com 6 FDMS7556S rev.c1 syncfet schottky body diode characteristics fairchild?s syncfet process emb eds a schottky diode in parallel with powertrench mosfet. th is diode exhibits similar characteristics to a discrete exte rnal schottky diode in parallel with a mosfet. figure 14 shows the reverses recovery characteristic of the FDMS7556S. schottky barrier diodes exhibit significant leakage at high tem - perature and high reverse voltage. this will increase the power in the device. typical char acteristics (continued) figure 14. FDMS7556S syncfet body diode reverse recovery characteristic figure 15. syncfet body diode reverses leakage versus drain-source voltage 0 5 10 15 20 25 0.000001 0.00001 0.0001 0.001 0.01 t j = 125 o c t j = 100 o c t j = 25 o c i dss , reverse leakage current (a) v ds , reverse voltage (v) 0 50 100 150 200 250 -5 0 5 10 15 20 25 30 35 40 di/dt = 300 a/ s current (a) time (ns)
FDMS7556S n-channel power trench ? syncfet tm www.fairchildsemi.com 7 FDMS7556S rev.c1 dimensional outlin e and pad layout
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