2009. 8. 31 1/2 semiconductor technical data KDV348E revision no : 0 vco. features ? low series resistance : r s =0.50 ? (max.) ? small package. maximum rating (ta=25 ? ) esc dim millimeters a b c d e 1.60 0.10 1.20 0.10 0.80 0.10 0.30 0.05 0.60 0.10 cathode mark d c b a 1 2 e 1. anode 2. cathode f 0.13 0.05 f + _ + _ + _ + _ + _ + _ electrical characteristics (ta=25 ? ) variable capacitance diode silicon epitaxial planar diode marking vt type name lot no. characteristic symbol rating unit reverse voltage v r 10 v junction temperature t j 150 ? storage temperature range t stg -55 ?- 150 ? forward current i f 20 ma characteristic symbol test condition min. typ. max. unit reverse voltage v r i r =1 a 10 - - v reverse current i r v r =6v - - 10 na v r =6v, t a =85 ? - - 100 capacitance c 1v v r =1v, f=1mhz 38.5 41.5 44.5 pf c 2v v r =2v, f=1mhz 22.5 - 27.5 c 3v v r =3v, f=1mhz 14 15.8 17.6 c 4v v r =4v, f=1mhz - 12.1 - capacitance ratio c 1v /c 3v f=1mhz 2.15 2.53 - - c 1v /c 4v f=1mhz - 3.3 - - series resistance r s v r =1v, f=470mhz - 0.25 0.5 ?
2009. 8. 31 2/2 KDV348E revision no : 0 i - v r reverse voltage v (v) 04 r reverse current i (a) 81216 rr 10 -13 -12 10 -11 10 capacitance c (pf) 0 3 24 01 reverse voltage v (v) r t t r c - v 5 20 40 60 80 f=1mhz 100 10 30 50 70 90 0 series resistance r ( ? ) s 50 30 1.0 0.5 reverse voltage v (v) r r - v sr 10 3.0 0.1 0.2 0.3 0.4 5.0 f=1mhz
|
