050-7210 rev a 8-2010 APT77N60BC6 apt77n60sc6 600v 77a 0.041 ? ultra low r ds(on) ? low miller capacitance ? ultra low gate charge, q g ? avalanche energy rated ? extreme dv / dt rated ? popular to-247 or surface mount d 3 package. super junction mosfet c power semiconductors o o l mos g d s to-247 d 3 pak maximum ratings all ratings per die: t c = 25c unless otherwise speci ed . caution: these devices are sensitive to electrostatic discharge. proper handling procedures should be followed. static electrical characteristics "coolmos? comprise a new family of transistors developed by in neon technologies ag. "coolmos" is a trade- mark of in neon technologies ag." microsemi website - http://www.microsemi.com symbol parameter apt77n60b_sc6 unit v dss drain-source voltage 600 volts i d continuous drain current @ t c = 25c 77 amps continuous drain current @ t c = 100c 49 i dm pulsed drain current 1 272 v gs gate-source voltage continuous 20 volts p d total power dissipation @ t c = 25c 481 watts t j ,t stg operating and storage junction temperature range - 55 to 150 c t l lead temperature: 0.063" from case for 10 sec. 300 i ar avalanche current 2 13.4 amps e ar repetitive avalanche energy 2 ( id =13.4a, vdd = 50v ) 2.96 mj e as single pulse avalanche energy ( id = 13.4a, vdd = 50v ) 1954 symbol characteristic / test conditions min typ max unit bv (dss) drain-source breakdown voltage (v gs = 0v, i d = 250 a) 600 volts r ds(on) drain-source on-state resistance 3 (v gs = 10v, i d = 44.4a) .037 .041 ohms i dss zero gate voltage drain current (v ds = v dss , v gs = 0v, t c = 25c) 25 a zero gate voltage drain current (v ds = v dss , v gs = 0v, t c = 150c) 250 i gss gate-source leakage current (v gs = 20v, v ds = 0v) 100 na v gs(th) gate threshold voltage (v ds = v gs , i d = 2.96ma) 2.5 3 3.6 volts
dynamic characteristics apt77n60b_sc6 050-7210 rev a 8-2010 microsemi reserves the right to change, without notice, the speci cations and information contained herein. source-drain diode ratings and characteristics thermal characteristics 1 repetitive rating: pulse width limited by maximum junction temperature 2 repetitive avalanche causes additional power losses that can be calculated as p av = e ar *f . pulse width tp limited by tj max. 3 pulse test: pulse width < 380 s, duty cycle < 2% 4 see mil-std-750 method 3471 5 eon includes diode reverse recovery. 6 maximum 125c diode commutation speed = di/dt 600a/ s symbol characteristic test conditions min typ max unit c iss input capacitance v gs = 0v v ds = 25v f = 1 mhz 13600 pf c oss output capacitance 4400 c rss reverse transfer capacitance 290 q g total gate charge 4 v gs = 10v v dd = 400v i d = 77a @ 25c 260 nc q gs gate-source charge 38 q gd gate-drain ("miller ") charge 144 t d(on) turn-on delay time inductive switching v gs = 10v v dd = 380v i d = 77a @ 25c r g = 5.0 18 ns t r rise time 27 t d(off) turn-off delay time 110 165 t f fall time 812 e on turn-on switching energy 5 inductive switching @ 25c v dd = 400v, v gs = 15v i d = 77a, r g = 5 1670 j e off turn-off switching energy 2880 e on turn-on switching energy 5 inductive switching @ 125c v dd = 400v, v gs = 15v i d = 77a, r g = 5 2300 e off turn-off switching energy 3100 symbol characteristic / test conditions min typ max unit i s continuous source current (body diode) 77 amps i sm pulsed source current 1 (body diode) 231 v sd diode forward voltage 3 (v gs = 0v, i s = -77a) 1 1.2 volts dv / dt peak diode recovery dv / dt 6 15 v/ns t rr reverse recovery time (i s = -77a, di / dt = 100a/ s) t j = 25c 950 ns q rr reverse recovery charge (i s = -77a, di / dt = 100a/ s) t j = 25c 32 c i rrm peak recovery current (i s = -77a, di / dt = 100a/ s) t j = 25c 60 amps symbol characteristic min typ max unit r jc junction to case 0.26 c/w r ja junction to ambient 40 0 0.05 0.10 0.15 0.20 0.25 0.30 10 -5 10 -4 10 -3 10 -2 0.1 1 z jc , thermal impedance (c/w) 0.3 d = 0.9 0.7 single pulse rectangular pulse duration (seconds) figure 1, maximum effective transient thermal impedance, junction-to-case vs pulse duration 0.5 0.1 0.05 peak t j = p dm x z jc + t c duty factor d = t 1 / t 2 t 2 t 1 p dm note:
apt77n60b_sc6 typical performance curves 0.60 0.70 0.80 0.90 1.00 1.10 1.20 - 50 0 50 100 150 0.90 0.95 1.00 1.05 1.10 1.15 1.20 -50 0 50 100 150 0.80 1.00 1.20 1.40 1.60 1.80 0 40 80 120 160 200 0 10 20 30 40 50 60 70 80 25 50 75 100 125 150 0 25 50 75 00 25 0 2 4 6 8 0 50 100 150 200 250 0 5 10 15 20 25 30 15v v gs = 20v t j = 25c t j = -55c v ds , drain-to-source voltage (v) figure 2, low voltage output characteristics i c , drain current (a) t j = 125c v gs , gate-to-source voltage (v) figure 3, transfer characteristics i d , drain current (a) t c , case temperature (c) figure 5, maximum drain current vs case temperature i d , drain current (a) i d, drain current (a) figure 4, r ds (on) vs drain current t j , junction temperature (c) figure 6, breakdown voltage vs temperature bv dss , drain-to-source breakdown voltage (normalized) t c , case temperature (c) figure 8, threshold voltage vs temperature v gs (th), threshold voltage (normalized) 0 0.50 1.00 1.50 2.00 2.50 3.00 -50 0 50 100 150 t j , junction temperature (c) figure 7, on-resistance vs temperature r ds(on) , drain-to-source on resistance (normalized) 5.5v 5v v gs = 10v v ds > i d (on) x r ds (on)max. 250 sec. pulse test @ <0.5 % duty cycle normalized to v gs = 10v @ 38.5a i d , drain current (a) v ds , drain-to-source voltage (v) figure 9, maximum safe operating area 0.1 1 10 100 800 1 10 100 800 1ms 100s 100ms 10ms 6.0v 6.5v 7.0v 10v r ds(on) , drain-to-source on resistance 7.5v 050-7210 rev a 8-2010
apt77n60b_sc6 typical performance curves 0 1000 2000 3000 4000 5000 6000 7000 0 10 20 30 40 50 0 50 00 50 00 0 25 50 75 100 125 1 10 100 350 0.3 0.5 0.7 0.9 1.1 1.3 1.5 0 50 100 150 200 250 300 350 400 0 25 50 75 100 125 0 2 4 6 8 10 12 14 0 50 100 150 200 250 300 350 10 100 1000 10,000 12,000 0 10 20 30 40 50 0 c iss t j = =25c v ds = 480v v ds , drain-to-source voltage (v) figure 10, capacitance vs drain-to-source voltage c, capacitance (pf) v ds = 300v q g , total gate charge (nc) figure 11, gate charges vs gate-to-source voltage v gs , gate-to-source voltage (volts) i d (a) figure 13, delay times vs current t d(on) and t d(off) (ns) v sd, source-to-drain voltage (v) figure 12, source-drain diode forward voltage i dr , reverse drain current (a) i d (a) figure 14 , rise and fall times vs current t r , and t f (ns) r g , gate resistance (ohms) figure 16, switching energy vs gate resistance switching energy (uj) 0 1000 2000 3000 4000 5000 6000 10 30 50 70 90 110 130 i d (a) figure 15, switching energy vs current switching energy ( j) c oss c rss t j = +150c i d = 77a v dd = 400v r g = 5.0 t j = 125c l = 100 h t d(on) t d(off) v dd = 400v r g = 5.0 t j = 125c l = 100 h e on includes diode reverse recovery. e on e off v dd = 400v r g = 5.0 t j = 125c l = 100 h t r t f e on e off v dd = 400v i d = 77a t j = 125c l = 100 h e on includes diode reverse recovery. v ds = 120v 050-7210 rev a 8-2010
apt77n60b_sc6 microsemi?s products are covered by one or more of u.s. patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,5 03,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 6,939,743, 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157, 886 6,939,743 7,342,262 and foreign patents. us and foreign patents pending. all rights reserved. figure 17, turn-on switching waveforms and de nitions figure 18, turn-off switching waveforms and de nitions i c d.u.t. apt30df60 v ce figure 20, inductive switching test circuit v dd g figure 19, inductive switching test circuit t j = 125c collector current collector voltage gate voltage 5% 10% t d(on) 90% 10% t r 5% switching energy t j = 125c collector voltage collector current gate voltage switching energy 0 t d(off) 10% t f 90% 15.49 (.610) 16.26 (.640) 5.38 (.212) 6.20 (.244) 6.15 (.242) bsc 4.50 (.177) max. 19.81 (.780) 20.32 (.800) 20.80 (.819) 21.46 (.845) 1.65 (.065) 2.13 (.084) 1.01 (.040) 1.40 (.055) 3.50 (.138) 3.81 (.150) 2.87 (.113) 3.12 (.123) 4.69 (.185) 5.31 (.209) 1.49 (.059) 2.49 (.098) 2.21 (.087) 2.59 (.102) 0.40 (.016) 0.79 (.031) drain drain source gate 5.45 (.215) bsc dimensions in millimeters and (inches) 2-plcs. 15.95 (.628) 16.05(.632) 1.22 (.048) 1.32 (.052) 5.45 (.215) bsc {2 plcs.} 4.98 (.196) 5.08 (.200) 1.47 (.058) 1.57 (.062) 2.67 (.105) 2.84 (.112) 0.46 (.018) {3 plcs} 0.56 (.022) dimensions in millimeters (inches) heat sink (drain) and leads are plated 3.81 (.150) 4.06 (.160) (base of lead) drain (heat sink) 1.98 (.078) 2.08 (.082) gate drain source 0.020 (.001) 0.178 (.007) 1.27 (.050) 1.40 (.055) 11.51 (.453) 11.61 (.457) 13.41 (.528) 13.51(.532) revised 8/29/97 1.04 (.041) 1.15(.045) 13.79 (.543) 13.99(.551) revised 4/18/95 apt30dq60 to - 247 package outline d 3 pak package outline e1 sac: tin, silver, copper e3 100% sn 050-7210 rev a 8-2010
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