? 2009 ixys corporation, all rights reserved symbol test conditions maximum ratings v ces t j = 25c to 150c 300 v v cgr t j = 25c to 150c, r ge = 1m 300 v v ges continuous 20 v v gem transient 30 v i c25 t c = 25c (chip capability) 400 a i c110 t c = 110c 200 a i lrms terminal current limit 160 a i cm t c = 25c, 1ms 1200 a ssoa v ge = 15v, t vj = 125c, r g = 1 i cm = 400 a (rbsoa) clamped inductive load @ 0.8 ? v ces p c t c = 25c 1000 w t j -55 ... +150 c t jm 150 c t stg -55 ... +150 c t l maximum lead temperature for soldering 300 c t sold 1.6 mm (0.062 in.) from case for 10 260 c m d mounting torque ( ixgk ) 1.13/10 nm/lb.in. f c mounting force ( ixgx ) 20..120/4.5..27 n/lb. weight to-264 10 g plus247 6 g symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. bv ces i c = 1ma, v ge = 0v 300 v v ge(th) i c = 4ma, v ce = v ge 3.0 5.0 v i ces v ce = v ces , v ge = 0v 50 a t j = 125c 2 ma i ges v ce = 0v, v ge = 20v 400 na v ce(sat) i c = 100a, v ge = 15v, note 1 1.15 v i c = 400a 1.70 v ds99584b(12/09) genx3 tm 300v igbts IXGK400N30A3 ixgx400n30a3 v ces = 300v i c25 = 400a v ce(sat) 1.15v ultra-low vsat pt igbts for up to 10khz switching g = gate e = emitter c = collector tab = collector plus247 tm (ixgx) g c e tab to-264 (ixgk) e g c e tab features z optimized for low conduction losses z high avalanche capability z international standard packages advantages z high power density z low gate drive requirement applications z power inverters z ups z motor drives z smps z pfc circuits z battery chargers z welding machines z lamp ballasts z inrush current protection circuits
ixys reserves the right to change limits, test conditions, and dimensions. IXGK400N30A3 ixgx400n30a3 symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. g fs i c = 60a, v ce = 10v, note 1 100 170 s c ies 19 nf c oes v ce = 25v, v ge = 0v, f = 1 mhz 1350 pf c res 190 pf q g(on) 560 nc q ge i c = 100a, v ge = 15v, v ce = 0.5 ? v ces 83 nc q gc 185 nc t d(on) 45 ns t r 45 ns t d(off) 210 ns t f 107 ns t d(on) 47 ns t r 53 ns t d(off) 240 ns t f 315 ns r thjc 0.125 c/w r thck 0.15 c/w resistive load, t j = 25c i c = 100a, v ge = 15v v ce = 240v, r g = 1 note 1. pulse test, t 300 s, duty cycle, d 2%. ixys mosfets and igbts are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 b1 6,683,344 6,727,585 7,005,734 b2 7,157,338b2 by one or more of the following u.s. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 b1 6,534,343 6,710,405 b2 6,759,692 7,063,975 b2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 b1 6,583,505 6,710,463 6,771,478 b2 7,071,537 dim. millimeter inches min. max. min. max. a 4.83 5.21 .190 .205 a 1 2.29 2.54 .090 .100 a 2 1.91 2.16 .075 .085 b 1.14 1.40 .045 .055 b 1 1.91 2.13 .075 .084 b 2 2.92 3.12 .115 .123 c 0.61 0.80 .024 .031 d 20.80 21.34 .819 .840 e 15.75 16.13 .620 .635 e 5.45 bsc .215 bsc l 19.81 20.32 .780 .800 l1 3.81 4.32 .150 .170 q 5.59 6.20 .220 0.244 r 4.32 4.83 .170 .190 terminals: 1 - gate 2 - drain (collector) 3 - source (emitter) plus247 tm (ixgx) outline to-264 (ixgk) outline resistive load, t j = 125c i c = 100a, v ge = 15v v ce = 240v, r g = 1
? 2009 ixys corporation, all rights reserved IXGK400N30A3 ixgx400n30a3 fig. 1. output characteristics @ t j = 25oc 0 50 100 150 200 250 300 350 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 v ce - volts i c - amperes v ge = 15v 11v 9v 7v 5v fig. 2. output characteristics @ t j = 125oc 0 50 100 150 200 250 300 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 v ce - volts i c - amperes v ge = 15v 11v 9v 5v 7v fig. 3. dependence of v ce(sat) on junction temperature 0.7 0.8 0.9 1.0 1.1 1.2 1.3 -50 -25 0 25 50 75 100 125 150 t j - degrees centigrade v ce(sat) - normalized v ge = 15v i c = 300a i c = 100a i c = 200a fig. 4. collector-to-emitter voltage vs. gate-to-emitter voltage 0.8 1.2 1.6 2.0 2.4 2.8 3.2 56789101112131415 v ge - volts v ce - volts i c = 300a 200a 100a t j = 25oc fig. 5. input admittance 0 40 80 120 160 200 240 280 4.0 4.4 4.8 5.2 5.6 6.0 6.4 6.8 v ge - volts i c - amperes t j = 125oc 25oc - 40oc fig. 6. transconductance 0 50 100 150 200 250 300 350 0 40 80 120 160 200 240 280 i c - amperes g f s - siemens t j = - 40oc 25oc 125oc
ixys reserves the right to change limits, test conditions, and dimensions. IXGK400N30A3 ixgx400n30a3 fig. 7. gate charge 0 2 4 6 8 10 12 14 16 0 100 200 300 400 500 600 q g - nanocoulombs v ge - volts v ce = 150v i c = 100a i g = 10ma fig. 9. reverse-bias safe operating area 0 50 100 150 200 250 300 350 400 450 25 75 125 175 225 275 325 v ce - volts i c - amperes t j = 125oc r g = 1 ? dv / dt < 10v / ns fig. 8. capacitance 100 1,000 10,000 100,000 0 5 10 15 20 25 30 35 40 v ce - volts capacitance - picofarads f = 1 mhz c ies c oes c res fig. 10. maximum transient thermal impedance 0.001 0.010 0.100 1.000 0.00001 0.0001 0.001 0.01 0.1 1 10 pulse width - seconds z (th)jc - oc / w
? 2009 ixys corporation, all rights reserved ixys ref: g_400n30a3(96)11-18-08-a IXGK400N30A3 ixgx400n30a3 fig. 12. resistive turn-on rise time vs. collector current 44 46 48 50 52 54 56 100 120 140 160 180 200 220 240 260 280 300 i c - amperes t r - nanoseconds r g = 1 ? , v ge = 15v v ce = 240v t j = 125oc t j = 25oc fig. 13. resistive turn-on switching times vs. gate resistance 30 40 50 60 70 80 90 100 110 120 130 12345678910 r g - ohms t r - nanoseconds 40 44 48 52 56 60 64 68 72 76 80 t d ( o n ) - nanoseconds t r t d(on) - - - - t j = 125oc, v ge = 15v v ce = 240v i c = 200a, 100a fig. 14. resistive turn-off switching times vs. junction temperature 50 100 150 200 250 300 350 400 25 35 45 55 65 75 85 95 105 115 125 t j - degrees centigrade t f - nanoseconds 180 190 200 210 220 230 240 250 t d ( o f f ) - nanoseconds t f t d(off) - - - - r g = 1 ? , v ge = 15v v ce = 240v i c = 300a, 200a, 100a fig. 16. resistive turn-off switching times vs. collector current 50 100 150 200 250 300 350 100 120 140 160 180 200 220 240 260 280 300 i c - amperes t f - nanoseconds 180 190 200 210 220 230 240 t d ( o f f ) - nanoseconds t f t d(off) - - - - r g = 1 ? , v ge = 15v v ce = 240v t j = 125oc t j = 25oc fig. 11. resistive turn-on rise time vs. junction temperature 44 46 48 50 52 54 56 25 35 45 55 65 75 85 95 105 115 125 t j - degrees centigrade t r - nanoseconds r g = 1 ? , v ge = 15v v ce = 240v i c = 300a, 200a, 100a fig. 15. resistive turn-off switching times vs. gate resistance 180 200 220 240 260 280 300 320 340 360 380 12345678910 r g - ohms t f - nanoseconds 100 200 300 400 500 600 700 800 900 1000 1100 t d ( o f f ) - nanoseconds t f t d(off) - - - - t j = 125oc, v ge = 15v v ce = 240v i c = 200a, 300a i c = 100a
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