? 2000 ixys all rights reserved d5 - 47 v rsm v rrm type v v 200 200 dsei 2x 61-02a symbol test conditions maximum ratings (per diode) i frms t vj = t vjm 100 a i favm t c = 85 c; rectangular, d = 0.5 71 a i frm t p < 10 i fsm t vj = 45 c; t = 10 ms (50 hz), sine 950 a t = 8.3 ms (60 hz), sine 1020 a t vj = 150 c; t = 10 ms (50 hz), sine 800 a t = 8.3 ms (60 hz), sine 870 a i 2 t t vj = 45 c t = 10 ms (50 hz), sine 4500 a 2 s t = 8.3 ms (60 hz), sine 4300 a 2 s t vj = 150 c; t = 10 ms (50 hz), sine 3200 a 2 s t = 8.3 ms (60 hz), sine 3140 a 2 s t vj -40...+150 c t vjm 150 c t stg -40...+150 c p tot t c = 25 c 150 w v isol 50/60 hz, rms i isol m d mounting torque 1.1-1.5/9-13 nm/lb.in. terminal connection torque (m4) 1.1-1.5/9-13 nm/lb.in. weight 30 g symbol test conditions characteristic values (per diode) typ. max. i r t vj = 25 cv r = v rrm 50 a t vj = 25 cv r = 0.8 v rrm 40 a t vj = 125 cv r = 0.8 v rrm 11 ma v f i f = 60 a; t vj = 150 c 0.88 v t vj =25 c 1.08 v v t0 for power-loss calculations only 0.7 v r t t vj = t vjm 3.0 m ? r thjc 0.8 k/w r thck 0.05 k/w t rr i f = 1 a; -di/dt = 200 a/s; v r = 30 v; t vj = 25 c 35 50 ns i rm v r = 100 v; i f = 60 a; -di f /dt = 200 a/s 8 10 a l c dsei 2x 61 i favm = 2x 71 a v rrm = 200 v t rr = 35 ns i favm rating includes reverse blocking losses at t vjm , v r = 0.8 v rrm , duty cycle d = 0.5 data according to iec 60747 ixys reserves the right to change limits, test conditions and dimensions fast recovery epitaxial diode (fred) features international standard package minibloc (isotop compatible) isolation voltage 2500 v~ 2 independent fred in 1 package planar passivated chips very short recovery time extremely low switching losses low i rm -values soft recovery behaviour applications antiparallel diode for high frequency switching devices anti saturation diode snubber diode free wheeling diode in converters and motor control circuits rectifiers in switch mode power supplies (smps) inductive heating and melting uninterruptible power supplies (ups) ultrasonic cleaners and welders advantages high reliability circuit operation low voltage peaks for reduced protection circuits low noise switching low losses operating at lower temperature or space saving by reduced cooling minibloc, sot-227 b e72873 009
? 2000 ixys all rights reserved d5 - 48 dsei 2x 61, 200v 200 600 1000 0 400 800 0 10 20 30 40 50 60 70 0.0001 0.001 0.01 0.1 1 10 0.01 0.1 1 0 40 80 120 160 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 k f t vj c -di f /dt t s k/w 0 200 400 600 800 0 1 2 3 4 5 0.0 0.5 1.0 1.5 2.0 2.5 v fr di f /dt v 200 600 1000 0 400 800 5 15 25 0 10 20 30 10 100 1000 0.0 0.2 0.4 0.6 0.8 0.0 0.4 0.8 1.2 0 20 40 60 80 100 120 140 160 i rm q r i f a v f -di f /dt -di f /dt a/ s a v s s a/ s t vj = 100 c v r = 100v t vj = 100 c i f = 100a fig. 3 typ. peak reverse current i rm versus -di f /dt fig. 2 typ. reverse recovery charge q r versus -di f /dt fig. 1 forward current i f versus v f t vj =100 c t vj =25 c t vj = 100 c v r = 100v t vj = 100 c v r = 100v q r i rm fig. 4 dynamic parameters q r , i rm versus t vj fig. 5 typ. recovery time t rr versus -di f /dt fig. 6 typ. peak forward voltage v fr and t fr versus di f /dt i f =35a i f =70a i f =140a t fr v fr fig. 7 transient thermal impedance junction to case t vj =150 c i f = 35a i f = 70a i f =140a i f = 35a i f = 70a i f =140a constants for z thjc calculation: r thi / (k/w) t i / (s) 0.1000 0.00014 0.3400 0.00600 0.3600 0.16500 dim. millimeter inches min. max. min. max. a 31.50 31.88 1.240 1.255 b 7.80 8.20 0.307 0.323 c 4.09 4.29 0.161 0.169 d 4.09 4.29 0.161 0.169 e 4.09 4.29 0.161 0.169 f 14.91 15.11 0.587 0.595 g 30.12 30.30 1.186 1.193 h 37.80 38.20 1.489 1.505 j 11.68 12.22 0.460 0.481 k 8.92 9.60 0.351 0.378 l 0.76 0.84 0.030 0.033 m 12.60 12.85 0.496 0.506 n 25.15 25.42 0.990 1.001 o 1.98 2.13 0.078 0.084 p 4.95 5.97 0.195 0.235 q 26.54 26.90 1.045 1.059 r 3.94 4.42 0.155 0.174 s 4.72 4.85 0.186 0.191 t 24.59 25.07 0.968 0.987 u -0.05 0.1 -0.002 0.004 v 3.30 4.57 0.130 0.180 w 0.780 0.830 19.81 21.08 dimensions minibloc sot-227 b m4 screws (4x) supplied
? 2000 ixys all rights reserved d5 - 49 v rsm v rrm type v v 440 400 dsei 2x 61-04c 640 600 dsei 2x 61-06c symbol test conditions maximum ratings (per diode) i frms t vj = t vjm 100 a i favm t c = 70 i frm t p < 10 i fsm t vj = 45 i 2 t t vj = 45 t vj -40...+150 t vjm 150 t stg -40...+150 p tot t c = 25 v isol 50/60 hz, rms 2500 v~ i isol m d mounting torque 1.5/13 nm/lb.in. terminal connection torque (m4) 1.5/13 nm/lb.in. weight 30 g symbol test conditions characteristic values (per diode) typ. max. i r t vj = 25 v rrm 100 v rrm 14 ma v f i f = 60 a; t vj = 150 v t0 for power-loss calculations only 1.13 v r t t vj = t vjm 4.7 m ? r thjc 0.7 k/w r thck 0.05 k/w t rr i f = 1 a; -di/dt = 200 a/ i rm v r = 350 v; i f = 60 a; -di f /dt = 480 a/ dsei 2x 61 i favm = 2x 60 a v rrm = 400/600 v t rr = 35 ns i favm rating includes reverse blocking losses at t vjm , v r = 0.8 v rrm , duty cycle d = 0.5 data according to iec 60747 ixys reserves the right to change limits, test conditions and dimensions features international standard package minibloc (isotop compatible) isolation voltage 2500 v~ 2 independent fred in 1 package planar passivated chips very short recovery time extremely low switching losses low i rm -values soft recovery behaviour applications antiparallel diode for high frequency switching devices anti saturation diode snubber diode free wheeling diode in converters and motor control circuits rectifiers in switch mode power supplies (smps) inductive heating and melting uninterruptible power supplies (ups) ultrasonic cleaners and welders advantages high reliability circuit operation low voltage peaks for reduced protection circuits low noise switching low losses operating at lower temperature or space saving by reduced cooling fast recovery epitaxial diode (fred) minibloc, sot-227 b e72873 009
? 2000 ixys all rights reserved d5 - 50 dsei 2x 61, 400/600 v fig. 1 forward current fig. 2 recovery charge versus -di f /dt. fig. 3 peak reverse current versus versus voltage drop. -di f /dt. fig. 4 dynamic parameters versus fig. 5 recovery time versus -di f /dt. fig. 6 peak forward voltage junction temperature. versus di f /dt. fig. 7 transient thermal impedance junction to case. dim. millimeter inches min. max. min. max. a 31.50 31.88 1.240 1.255 b 7.80 8.20 0.307 0.323 c 4.09 4.29 0.161 0.169 d 4.09 4.29 0.161 0.169 e 4.09 4.29 0.161 0.169 f 14.91 15.11 0.587 0.595 g 30.12 30.30 1.186 1.193 h 37.80 38.20 1.489 1.505 j 11.68 12.22 0.460 0.481 k 8.92 9.60 0.351 0.378 l 0.76 0.84 0.030 0.033 m 12.60 12.85 0.496 0.506 n 25.15 25.42 0.990 1.001 o 1.98 2.13 0.078 0.084 p 4.95 5.97 0.195 0.235 q 26.54 26.90 1.045 1.059 r 3.94 4.42 0.155 0.174 s 4.72 4.85 0.186 0.191 t 24.59 25.07 0.968 0.987 u -0.05 0.1 -0.002 0.004 v 3.30 4.57 0.130 0.180 w 0.780 0.830 19.81 21.08 dimensions minibloc sot-227 b m4 screws (4x) supplied
? 2000 ixys all rights reserved d5 - 51 v rsm v rrm type v v 1000 1000 dsei 2x 61-10b symbol test conditions maximum ratings (per diode) i frms t vj = t vjm 100 a i favm t c = 50 i frm t p < 10 i fsm t vj = 45 i 2 t t vj = 45 t vj -40...+150 t vjm 150 t stg -40...+150 p tot t c = 25 v isol 50/60 hz, rms 2500 v~ i isol m d mounting torque 1.5/13 nm/lb.in. terminal connection torque (m4) 1.5/13 nm/lb.in. weight 30 g symbol test conditions characteristic values (per diode) typ. max. i r t vj = 25 v rrm 0.5 ma t vj = 125 v rrm 14 ma v f i f = 60 a; t vj = 150 v t0 for power-loss calculations only 1.43 v r t t vj = t vjm 6.1 m ? r thjc 0.7 k/w r thck 0.05 k/w t rr i f = 1 a; -di/dt = 200 a/ i rm v r = 540 v; i f = 60 a; -di f /dt = 480 a/ dsei 2x 61 i favm = 2x 60 a v rrm = 1000 v t rr = 35 ns i favm rating includes reverse blocking losses at t vjm , v r = 0.8 v rrm , duty cycle d = 0.5 data according to iec 60747 ixys reserves the right to change limits, test conditions and dimensions features international standard package minibloc (isotop compatible) isolation voltage 2500 v~ 2 independent fred in 1 package planar passivated chips very short recovery time extremely low switching losses low i rm -values soft recovery behaviour applications antiparallel diode for high frequency switching devices anti saturation diode snubber diode free wheeling diode in converters and motor control circuits rectifiers in switch mode power supplies (smps) inductive heating and melting uninterruptible power supplies (ups) ultrasonic cleaners and welders advantages high reliability circuit operation low voltage peaks for reduced protection circuits low noise switching low losses operating at lower temperature or space saving by reduced cooling fast recovery epitaxial diode (fred) minibloc, sot-227 b e72873 009
? 2000 ixys all rights reserved d5 - 52 fig. 1 forward current fig. 2 recovery charge versus -di f /dt. fig. 3 peak reverse current versus versus voltage drop. -di f /dt. fig. 4 dynamic parameters versus fig. 5 recovery time versus -di f /dt. fig. 6 peak forward voltage junction temperature. versus di f /dt. fig. 7 transient thermal impedance junction to case. dsei 2x 61, 1000 v dim. millimeter inches min. max. min. max. a 31.50 31.88 1.240 1.255 b 7.80 8.20 0.307 0.323 c 4.09 4.29 0.161 0.169 d 4.09 4.29 0.161 0.169 e 4.09 4.29 0.161 0.169 f 14.91 15.11 0.587 0.595 g 30.12 30.30 1.186 1.193 h 37.80 38.20 1.489 1.505 j 11.68 12.22 0.460 0.481 k 8.92 9.60 0.351 0.378 l 0.76 0.84 0.030 0.033 m 12.60 12.85 0.496 0.506 n 25.15 25.42 0.990 1.001 o 1.98 2.13 0.078 0.084 p 4.95 5.97 0.195 0.235 q 26.54 26.90 1.045 1.059 r 3.94 4.42 0.155 0.174 s 4.72 4.85 0.186 0.191 t 24.59 25.07 0.968 0.987 u -0.05 0.1 -0.002 0.004 v 3.30 4.57 0.130 0.180 w 0.780 0.830 19.81 21.08 dimensions minibloc sot-227 b m4 screws (4x) supplied
? 2000 ixys all rights reserved d5 - 53 v rsm v rrm type v v 1200 1200 dsei 2x 61-12b symbol test conditions maximum ratings (per diode) i frms t vj = t vjm 100 a i favm t c = 50 i frm t p < 10 i fsm t vj = 45 i 2 t t vj = 45 t vj -40...+150 t vjm 150 t stg -40...+150 p tot t c = 25 v isol 50/60 hz, rms 2500 v~ i isol m d mounting torque 1.5/13 nm/lb.in. terminal connection torque (m4) 1.5/13 nm/lb.in. weight 30 g symbol test conditions characteristic values (per diode) typ. max. i r t vj = 25 v rrm 0.5 ma t vj = 125 v rrm 14 ma v f i f = 60 a; t vj = 150 v t0 for power-loss calculations only 1.65 v r t t vj = t vjm 8.3 m ? r thjc 0.7 k/w r thck 0.05 k/w t rr i f = 1 a; -di/dt = 200 a/ i rm v r = 540 v; i f = 60 a; -di f /dt = 480 a/ dsei 2x 61 i favm = 2x 52 a v rrm = 1200 v t rr = 40 ns i favm rating includes reverse blocking losses at t vjm , v r = 0.8 v rrm , duty cycle d = 0.5 data according to iec 60747 ixys reserves the right to change limits, test conditions and dimensions features international standard package minibloc (isotop compatible) isolation voltage 2500 v~ 2 independent fred in 1 package planar passivated chips very short recovery time extremely low switching losses low i rm -values soft recovery behaviour applications antiparallel diode for high frequency switching devices anti saturation diode snubber diode free wheeling diode in converters and motor control circuits rectifiers in switch mode power supplies (smps) inductive heating and melting uninterruptible power supplies (ups) ultrasonic cleaners and welders advantages high reliability circuit operation low voltage peaks for reduced protection circuits low noise switching low losses operating at lower temperature or space saving by reduced cooling fast recovery epitaxial diode (fred) minibloc, sot-227 b e72873 009
? 2000 ixys all rights reserved d5 - 54 0 200 400 600 800 1000 0.0 0.2 0.4 0.6 0.8 1.0 10 100 1000 0 2 4 6 8 10 12 0 200 400 600 800 1000 0 20 40 60 80 0 200 400 600 800 1000 0 10 20 30 40 50 60 t vj =125c di f /dt t fr v fr t fr ns 0 200 400 600 800 1000 1200 a/s v v fr v r =540v t vj =100c -di f /dt s t rr typ. 0 40 80 120 160 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 k f q r i rm c t j t vj =100c a max. typ. v r =540v i rm -di f /dt c q r typ. max. v r = 540v 01234 0 10 20 30 40 50 60 70 80 90 t vj =100c v v f i f t vj =150c t vj =100c t vj = 25c a i f =60a i f =120a i f =60a i f =30a i f =60a a/s i f =30a i f =60a i f =120a i f =60a i f =30a i f =60a i f =60a i f =120a a/s a/s -di f /dt max. dsei 2x 61, 1200 v fig. 7 transient thermal impedance junction to case. fig. 1 forward current fig. 2 recovery charge versus -di f /dt. fig. 3 peak reverse current versus versus voltage drop. -di f /dt. fig. 4 dynamic parameters versus fig. 5 recovery time versus -di f /dt. fig. 6 peak forward voltage junction temperature. versus di f /dt. dim. millimeter inches min. max. min. max. a 31.50 31.88 1.240 1.255 b 7.80 8.20 0.307 0.323 c 4.09 4.29 0.161 0.169 d 4.09 4.29 0.161 0.169 e 4.09 4.29 0.161 0.169 f 14.91 15.11 0.587 0.595 g 30.12 30.30 1.186 1.193 h 37.80 38.20 1.489 1.505 j 11.68 12.22 0.460 0.481 k 8.92 9.60 0.351 0.378 l 0.76 0.84 0.030 0.033 m 12.60 12.85 0.496 0.506 n 25.15 25.42 0.990 1.001 o 1.98 2.13 0.078 0.084 p 4.95 5.97 0.195 0.235 q 26.54 26.90 1.045 1.059 r 3.94 4.42 0.155 0.174 s 4.72 4.85 0.186 0.191 t 24.59 25.07 0.968 0.987 u -0.05 0.1 -0.002 0.004 v 3.30 4.57 0.130 0.180 w 0.780 0.830 19.81 21.08 dimensions minibloc sot-227 b m4 screws (4x) supplied
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