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?2008 silicon storage technology, inc. s71237-08-000 5/08 1 the sst logo and superflash are registered trademarks of silicon storage technology, inc. these specifications are subject to change without notice. data sheet features: ? operational clock frequency ? 33 mhz ? 66 mhz ? organized as 2m x8 ? conforms to lpc interface specification v1.1 ? support multi-byte firmware memory read/ write cycles ? single 3.0-3.6v read and write operations ? lpc mode ? 5-signal lpc bus interface for both in-system and factory programming using programmer equipment ? multi-byte read data transfer rate 15.6 mb/s @ 33 mhz pci clock and 31.2 mb/s @ 66 mhz clock - firmware memory read cycle supporting 1, 2, 4, 16, and 128 byte read - firmware memory write cycle supporting 1, 2, and 4 byte write ? 33 mhz/66 mhz clock frequency operation ? wp#/aai and tbl# pins provide hardware write protect for entire chip and/or top boot block ? block locking registers for individual block read- lock, write-lock, and lock-down protection ? 5 gpi pins for system design flexibility ? 4 id pins for multi-chip selection ? multi-byte capability registers (read-only registers) ? status register for end-of-write detection ? program-/erase-suspend read or write to other blocks during program-/erase-suspend ? two-cycle command set ? security id feature ? 256-bit secure id space - 64-bit unique factory pre-programmed device identifier - 192-bit user-programmable otp ? superior reliability ? endurance: 100,000 cycles (typical) ? greater than 100 years data retention ? low power consumption ? active read current: 12 ma (typical) ? standby current: 10 a (typical) ? uniform 4 kbyte sectors ? 35 overlay blocks: one 16-kbyte boot block, two 8-kbyte parameter blocks, one 32-kbyte parameter block, thirty-one 64-kbyte main blocks. ? fast sector-erase/program operation ? sector-erase time: 18 ms (typical) ? block-erase time: 18 ms (typical) ? program time: 7 s (typical) ? auto address increment (aai) for rapid factory programming (high voltage enabled) ? ry/by# pin for end-of-write detection ? multi-byte program ? chip rewrite time: 4 seconds (typical) ? packages available ? 32-lead plcc ? 32-lead tsop (8mm x 14mm) ? 40-lead tsop (10mm x 20mm) ? all non-pb (lead-free) devices are rohs compliant product description the sst49lf016c flash memory device is designed to interface with host controllers (chipsets) that support a low- pin-count (lpc) interface for system firmware applications. complying with lpc interface specification 1.1, sst49lf016c supports a burst-read data transfer of 15.6 mbytes per second at 33 mhz clock speed and 31.2 mbytes per second at 66 mhz clock speed, up to 128 bytes in a single operation. the lpc interface operates wi th 5 signal pins versus 28 pins of a 8-bit parallel flash memory. this frees up pins on the asic host controller resulting in lower asic costs and a reduction in overall system costs due to simplified signal routing. this 5-signal lpc interface supports both in-sys- tem and rapid factory programming using programmer equipment. a high voltage pin (wp#/aai) enables auto address increment (aai) mode. via the software registers, the sst49lf016c offers hard- ware block protection and individual block protection for crit- ical system code and data. the 256-bit security id space is comprised of a 64-bit factory pre-programmed unique number and a 192-bit one-time-programmable (otp) area. this security id permits the use of new security tech- niques and implementation of a new data protection scheme. to protect against inadvertent write, the sst49lf016c device has on-chip hardware and software write protection schemes. the sst49lf016c also pro- vides general purpose inputs (gpi) for system design flexi- bility. manufactured with sst proprietary, high-performance superflash technology, sst49lf016c has a split-gate cell design and thick-oxide tunneling injector for greater reliabil- ity and manufacturability compar ed with alternative technol- ogy approaches. 16 mbit lpc serial flash sst49lf016c 016c16mb lpc firmware flash
2 data sheet 16 mbit lpc serial flash sst49lf016c ?2008 silicon storage technology, inc. s71237-08-000 5/08 the sst49lf016c significant ly improves performance and reliability, while lowering power consumption. the total energy consumed is a function of the applied voltage, cur- rent and time of application. because the sst49lf016c writes in-system with a single 3.0-3.6v power supply, the total energy consumed during any erase or program oper- ation is less than alternative flash memory technologies. the superflash technology provides fixed erase and pro- gram time, independent of the number of erase/program cycles performed. this feature eliminates system software or hardware calibration or erase cycle correlation which is necessary with alternative flash memory technologies, whose erase and program time increase with accumulated erase/program cycles. the sst49lf016c product provides a maximum program time of 10 s per byte with a single-byte program opera- tion; effectively 5 s per byte with a dual-byte program operation and 2.5 s per byte with a quad-byte program operation. the sst49lf016c is offered in 32-plcc, 32-tsop, and 40-tsop packages. see figures 3, 4, and 5 for pin assign- ments and table 1 for pin descriptions.
data sheet 16 mbit lpc serial flash sst49lf016c 3 ?2008 silicon storage technology, inc. s71237-08-000 5/08 functional blocks figure 1: functional block diagram 1237 b1.0 y-decoder i/o buffers and data latches address buffers & latches x-decoder superflash memory control logic lclk rst# gpi[4:0] aai interface wp# tbl# init# id[3:0] lframe# ry/by# ld# aai lad[3:0] lpc interface
4 data sheet 16 mbit lpc serial flash sst49lf016c ?2008 silicon storage technology, inc. s71237-08-000 5/08 device memory map figure 2: device memory map for sst49lf016c block 7 block 8 block 6 block 5 block 4 block 3 block 2 block 1 block 15 block 14 block 17 block 16 block 13 block 12 block 11 block 10 block 9 block 24 block 25 block 23 block 22 block 21 block 20 block 19 block 18 block 32 block 31 block 34 block 33 block 30 block 29 block 28 block 27 block 26 block 0 (64 kbyte) 1237 f16.0 wp# for block 0~33 wp# for block 0~33 tbl# 4 kbyte sector 1 4 kbyte sector 2 4 kbyte sector 15 4 kbyte sector 0 boot block 002000h 001000h 000000h 11ffffh 110000h 10ffffh 100000h 0fffffh 0f0000h 0effffh 0e0000h 0dffffh 0d0000h 0cffffh 0c0000h 0bffffh 0b0000h 0affffh 0a0000h 09ffffh 090000h 08ffffh 080000h 07ffffh 070000h 06ffffh 060000h 05ffffh 050000h 04ffffh 040000h 03ffffh 030000h 02ffffh 020000h 01ffffh 010000h 00ffffh 1fffffh 1fc000h 1fbfffh 1fa000h 1f9fffh 1f8000h 1f7fffh 1f0000h 1effffh 1e0000h 1dffffh 1d0000h 1cffffh 1c0000h 1bffffh 1b0000h 1affffh 1a0000h 19ffffh 190000h 18ffffh 180000h 17ffffh 170000h 16ffffh 160000h 15ffffh 150000h 14ffffh 140000h 13ffffh 130000h 12ffffh 120000h
data sheet 16 mbit lpc serial flash sst49lf016c 5 ?2008 silicon storage technology, inc. s71237-08-000 5/08 pin assignments figure 3: pin assignments for 32-lead plcc figure 4: pin assignments for 32-lead tsop 5 6 7 8 9 10 11 12 13 29 28 27 26 25 24 23 22 21 gpi1 (ld#) gpi0 (ry/by#) wp#/aai tbl# id3 id2 id1 id0 lad0 nc nc nc nc v dd init# lframe# nc nc 4 3 2 1 32 31 30 gpi2 gpi3 rst# nc nc lclk gpi4 32-lead plcc top view 1237 32-plcc p2.0 14 15 16 17 18 19 20 lad1 lad2 v ss lad3 nc nc nc ( ) designates aai mode nc nc nc nc nc gpi4 lclk nc nc rst# gpi3 gpi2 gpi1 (ld#) gpi0 (ry/by#) wp#/aai tbl# 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 init# lframe# v dd nc nc nc nc lad3 v ss lad2 lad1 lad0 id0 id1 id2 id3 32 31 30 29 28 27 26 25 24 23 22 21 20 19 18 17 1237 32-tsop p1.0 32-lead tsop top view ( ) designates aai mode
6 data sheet 16 mbit lpc serial flash sst49lf016c ?2008 silicon storage technology, inc. s71237-08-000 5/08 figure 5: pin assignments for 40-lead tsop 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25 24 23 22 21 1237 40-tsop p3.0 40-lead tsop top view nc nc nc nc nc nc gpi4 nc lclk nc nc rst# nc nc gpi3 gpi2 gpi1 (ld#) gpi0 (ry/by#) wp#/aai tbl# nc v dd lframe# init# nc nc nc nc nc nc v ss v ss lad3 lad2 lad1 lad0 id0 id1 id2 id3 ( ) designates aai mode
data sheet 16 mbit lpc serial flash sst49lf016c 7 ?2008 silicon storage technology, inc. s71237-08-000 5/08 pin descriptions table 1: pin description symbol pin name type 1 1. i=input, o=output interface functions aai lpc lclk clock i x x to accept a clock input from the control unit lad[3:0] address and data i/o x x to provide lpc bus information, su ch as addresses and command inputs/ outputs data. lframe# frame i x x to indicate the start of a data transfer operation; also used to abort an lpc cycle in progress. rst# reset i x x to reset the operation of the device init# initialize i x x this is the second reset pin for in-system use. this pin is internally combined with the rst# pin. if this pin or rst# pin is driven low, identical operation is exhibited. id[3:0] identification inputs i x x these four pins are part of the mechanism that allows multiple parts to be attached to the same bus. the strappin g of these pins is used to identify the component. the boot device must have id[3:0]=0000, all subsequent devices should use sequential up-count strapping. these pins are inter- nally pulled-down with a resistor between 20-100 k . when in aai mode, these pins oper ate identically as in firmware memory cycles. gpi[4:0] general purpose inputs i x these individual inputs can be used for additional board flexibility. the state of these pins can be read through lpc registers. these inputs should be at their desir ed state before the start of the lpc clock cycle dur- ing which the read is attempted, and should remain in place until the end of the read cycle. unused gp i pins must not be floated. gpi[2:4] are ignored when in aai mode. tbl# top block lock i x when low, prevents programming to the boot block sectors at top of device memory. when tbl# is high it disables hardware write protection for the top block sectors. this pin cannot be left unconnected. tbl# setting is ignored when in aai mode. wp#/aai write protect i x when low, prevents programming to all but the highest addressable block (boot block). when wp# is high it disables hardware write protection for these blocks. this pin cannot be left unconnected. wp#/aai aai enable i x when set to the supervoltage v h = 9v, configures the device to program multiple bytes in aai mode. when brought to v il /v ih , returns device to lpc mode. ry/by# ready/busy# o x open drain output that indicates the device is ready to accept data in an aai mode, or that the internal cycle is complete. used in conjunction with ld# pin to switch between these two flag states. ld# load-enable# i x input pin which when low, indicates the host is loading data in an aai pro- gramming cycle. if ld# is high, the host signals the aai interface that it is terminating a command. ld# low/high switches the ry/by# output from a ?buffer free? flag to a ?pro gramming complete? flag. v dd power supply pwr x x to provide power supply (3.0-3.6v) v ss ground pwr x x circuit ground (0v reference) nc no connection n/a n/a unconnected pins. t1.2 1237
8 data sheet 16 mbit lpc serial flash sst49lf016c ?2008 silicon storage technology, inc. s71237-08-000 5/08 clock the lclk pin accepts a clock input from the host controller. input/output communications the lad[3:0] pins are used to serially communicate cycle information such as cycle type, cycle direction, id selection, address, data, and sync fields. input communication frame the lframe# pin is used to indicate start of a lpc bus cycle. the pin is also used to abort an lpc bus cycle in progress. reset a v il on init# or rst# pin initiates a device reset. init# and rst# pins have the same function internally. it is required to drive init# or rst# pins low during a system reset to ensure proper cpu initialization. during a read operation, driving init# or rst# pins low deselects the device and places the output drivers, lad[3:0], in a high impedance state. the reset signal must be held low for a minimum of time t rstp. a reset latency occurs if a reset pro- cedure is performed during a program or erase operation. see table 25, reset timing parameters, for more informa- tion. a device reset during an active program or erase oper- ation will abort the operation and memory contents may become invalid due to data being altered or corrupted from an incomplete erase or program operation. identification inputs these pins are part of a mechanism that allows multiple devices to be attached to the same bus. the strapping of these pins is used to identify the component. the boot device must have id[3:0] = 0; all subsequent devices should use sequential count-up strapping. these pins are internally pulled-down with a resistor between 20-100 k . general purpose inputs the general purpose inputs (gpi[4:0]) can be used as dig- ital inputs for the cpu to read. the gpi register holds the values on these pins. the da ta on the gpi pins must be stable before the start of a gpi register read and remain stable until the read cycle is complete. the pins must be driven low, v il , or high, v ih but not left unconnected (float). write protect / top block lock the top boot lock (tbl#) and write protect (wp#/aai) pins are provided for hardware write protection of device memory in the sst49lf016c. the tbl# pin is used to write protect 16 kbyte at the highest memory address range for the sst49lf016c. wp#/aai pin write protects the remaining sectors in the flash memory. an active low signal at the tbl# pin prevents program and erase opera- tions of the top boot block. when tbl# pin is held high, write protection of the top boot block is then determined by the boot block locking registers. the wp#/aai pin serves the same function for the remaining sectors of the device memory. the tbl# and wp#/aai pins write protection functions operate independently of one another. both tbl# and wp#/aai pins must be set to their required protection states prior to starting a program or erase operation. a logic level change occurring at the tbl# or wp#/aai pin during a program or erase operation could cause unpre- dictable results. tbl# and wp#/aai pins cannot be left unconnected. tbl# is internally or?ed with the top boot block locking register. when tbl# is low, the top boot block is hardware write protected regardless of the state of the write-lock bit for the boot block locking register. clearing the write-pro- tect bit in the register when tbl# is low will have no func- tional effect, even though the register may indicate that the block is no longer locked. wp#/aai is internally or?ed with the block locking regis- ter. when wp#/aai is low, the blocks are hardware write protected regardless of the state of the write-lock bit for the corresponding block locking registers. clearing the write-protect bit in any register when wp#/aai is low will have no functional effect, even though the register may indi- cate that the block is no longer locked. aai enable the aai enable pin (wp#/aai) is used to enable the auto address increment (aai) mode. when the wp#/aai pin is set to the supervoltage v h (90.5v), the device is in aai mode with multi-byte programming. when the wp#/aai pin is brought to v il /v ih levels, the device returns to lpc mode. ready/busy the ready/busy pin (ry/by#), is an open drain output which indicates the device is ready to accept data in an aai mode, or that the internal programming cycle is complete. the pin is used in conjunction with the ld# pin to switch between these two flag states (see table 18).
data sheet 16 mbit lpc serial flash sst49lf016c 9 ?2008 silicon storage technology, inc. s71237-08-000 5/08 load enable the load enable pin (ld#), is an input pin which when low, indicates the host is loading data in an aai programming cycle. data is loaded in the sst49lf016c at the rising edge of the clock. if ld# is high, it signals the aai interface that the host is terminating the command. ld# low/high switches the ry/by# output from buffer free flag to pro- gramming complete flag (see table 18). no connection (nc) these pins are not connected internally. design considerations sst recommends a high frequency 0.1 f ceramic capac- itor to be placed as close as possible between v dd and v ss less than 1 cm away from the v dd pin of the device. additionally, a low frequency 4.7 f electrolytic capacitor from v dd to v ss should be placed within 1 cm of the v dd pin. if you use a socket for programming purposes add an additional 1-10 f next to each socket. the rst# pin must remain stable at v ih for the entire duration of an erase operation. wp#/aai must remain stable at v ih for the entire duration of the erase and program operations for non-boot block sectors. to write data to the top boot block sectors, the tbl# pin must also remain stable at v ih for the entire duration of the erase and program operations. mode selection the sst49lf016c flash memory device operates in two distinct interface modes: the lpc mode and the auto address increment (aai) mode. the wp#/aai pin is used to set the interface mode selection. the device is in aai mode when the wp#/aai pin is set to the supervoltage v h (90.5v), and in the lpc mode when the wp#/aai is set to v il /v ih. the mode selection must be configured prior to device operation. lpc mode device operation the sst49lf016c supports multi-byte firmware memory read and write cycle types as defined in low pin count interface specification, revision 1.1. table 2 shows the size of transfer supported by the sst49lf016c. the lpc mode uses a 5-signal communication interface: one control line, lframe#, which is driven by the host to start or abort a bus cycle, a 4-bit data bus, lad[3:0], used to communicate cycle type, cyc le direction, id selection, address, data and sync fields. the device enters standby mode when lframe# is taken high and no internal opera- tion is in progress. the host drives lframe# signal from low-to-high to cap- ture the start field of a lpc cycle. on the cycle in which lframe# goes inactive, the last latched value is taken as the start value. the start value determines whether the sst49lf016c will respo nd to a firmware memory read/write cycle type as defined in table 3. see following sections on details of firmware memory cycle types (tables 4 and 5). two-cycle program and erase command sequences are used to initiate firmware memory program and erase operations. see table 8 for a listing of program and erase commands. table 2: transfer size supported cycle type size of transfer firmware memory read 1, 2, 4, 16, 128 bytes firmware memory write 1, 2, 4 bytes t2.1 1237 table 3: firmware memory cycles start field definition start value definition 1101 start of a firmware memory read cycle 1110 start of a firmware memory write cycle t3.1 1237
10 data sheet 16 mbit lpc serial flash sst49lf016c ?2008 silicon storage technology, inc. s71237-08-000 5/08 firmware memory cycles firmware memory read cycle figure 6: firmware memory read cycle waveform table 4: firmware memory read cycle field definitions clock cycle field name field contents lad[3:0] 1 1. field contents are valid on the ri sing edge of the present clock cycle. lad[3:0] direction comments 1 start 1101 in lframe# must be active (low) for the part to respond. only the last start field (bef ore lframe# transitions high) will be recognized. the start field contents (1101b) indi- cate a firmware memory read cycle. 2 idsel 0000 to 1111 in indicates which sst49lf016c device should respond. if the idsel (id select) field matches the value of id[3:0], then that particular device will respond to the lpc bus cycle. 3-9 maddr yyyy in these seven clock cyc les make up the 28-bit memory address. yyyy is one nibble of the entire address. addresses are transferred most-significant nibble first. 10 msize kkkk in the msize field indicates how many bytes will be trans- ferred during multi-byte operations. device will execute multi-byte read of 2 msize bytes. sst49lf016c supports only msize = 0, 1, 2, 4, 7 (1, 2, 4, 16, 128 bytes), with kkkk=0000b, 0001b, 0010b, 0100b, or 0111b. 11 tar0 1111 in, then float in this clock cycle, the master has driven the bus to all ?1?s and then floats the bus, prior to the next clock cycle. this is the first part of the bus ?turnaround cycle.? 12 tar1 1111 (float) float, then out the sst49lf016c takes control of the bus during this cycle. 13 rsync 0000 (ready) out during this clock cycle, the device generates a ?ready sync? (rsync) indicating that the device has received the input data. the least-significant nibble of the least-significant byte will be available duri ng the next clock cycle. 14-a data zzzz out a=(13+2 n+1 ); n = msize least significant nibbles outputs first. (a+1) tar0 1111 out, then float in this clock cycle, the sst49lf016c drives the bus to all ones and then floats the bus prior to the next clock cycle. this is the first part of the bus ?turnaround cycle.? a=(13+2 n+1 ); n = msize (a+2) tar1 1111 (float) float, then in the host resumes control of the bus during this cycle. a=(13+2 n+1 ); n = msize t4.0 1237 1237 f03.0 lframe# lad[3:0] 1101b 0000b a[23:20] a[19:16] a[3:0] a[7:4] a[11:8] a[15:12] maddr start idsel msize lclk a[27:24] 0000b rsync ta r 1 ta r 0 ta r d 0 [7:4] tri-state d 0 [3:0] d n [7:4] d n [3:0] kkkkb 1111b data
data sheet 16 mbit lpc serial flash sst49lf016c 11 ?2008 silicon storage technology, inc. s71237-08-000 5/08 firmware memory write cycle figure 7: firmware memory write cycle waveform table 5: firmware memory write cycle clock cycle field name field contents lad[3:0] 1 1. field contents are valid on the ri sing edge of the present clock cycle. lad[3:0] direction comments 1 start 1110 in lframe# must be active (low) for the part to respond. only the last start field (before lframe# transitions high) will be recognized. the start field contents (1110b) indicate a firmwa re memory write cycle. 2 idsel 0000 to 1111 in indicates which sst49lf016c device should respond. if the idsel (id select) field matches the value of id[3:0], then that particular device will respond to the whole bus cycle. 3-9 maddr yyyy in these seven clock cycles make up the 28-bit memory address. yyyy is one nibble of the entire address. addresses are transferred most-significant nibble first. 10 msize kkkk in the msize field indicates how many bytes will be transferred during multi-byte operations. device supports 1, 2, and 4 bytes write with msize = 0, 1, or 2, and kkkk=0000b, 0001b, or 0010b. 11-a data zzzz in a=(10+2 n+1 ); n = msize least significant nibble entered first. (a+1) tar0 1111 in then float in this clock cycle, the master has driven the bus to all ?1?s and then floats the bus prior to the next clock cycle. this is the first part of the bus ?turnaround cycle.? a=(10+2 n+1 ); n = msize (a+2) tar1 1111 (float) float then out the sst49lf 016c takes control of the bus during this cycle. a=(10+2 n+1 ); n = msize (a+3) rsync 0000 out during this clock cycle, the sst49lf016c generates a ?ready sync? (rsync) and outputs the values 0000, indicating that it has receiv ed data or a flash command. a=(10+2 n+1 ); n = msize (a+4) tar0 1111 out then float in this clock cycle, the sst49lf016c drives the bus to all ?1?s and then floats the bus prior to the next clock cycle. this is the first part of the bus ?turnaround cycle?. a=(10+2 n+1 ); n = msize (a+5) tar1 1111 (float) float then in the host resumes cont rol of the bus during this cycle. a=(10+2 n+1 ); n = msize t5.0 1237 1237 f04.0 lframe# lad[3:0] 1110b 0000b a[23:20] a[19:16] a[3:0] a[7:4] a[11:8] a[15:12] maddr start idsel msize lclk a[27:24] 0000b rsync ta r 1 ta r 0 ta r d 0 [7:4] tri-state d 0 [3:0] dn[7:4] dn[3:0] kkkkb 1111b data
12 data sheet 16 mbit lpc serial flash sst49lf016c ?2008 silicon storage technology, inc. s71237-08-000 5/08 abort mechanism if lframe# is driven low for one or more clock cycles after the start of a bus cycle, the cycle will be terminated. the host may drive the lad[3:0] with ?1111b? (abort nibble) to return the interface to ready mode. the abort only affects the current bus cycle. for a multi-cycle command sequence, such as the erase or program commands, abort doesn?t interrupt the entire command sequence, only the current bus cycle of the command sequence. the host can re-send the bus cycle for the aborted command and continue the command sequence after the device is ready again. response to invalid fields for firmware memory cycle during an on-going firmware memory bus cycle, the sst49lf016c will not explicitly indicate that it has received invalid field sequences. the response to specific invalid fields or sequences is described as follows: id mismatch: if the idsel field does not match id[3:0], the device will ignore the cycle. see ?multiple device selec- tion for firmware memory cycle? on page 13 for details. address out of range: the address sequence is 7 fields long (28 bits) with firmware memory bus cycles. only some of the address fields bits are decoded by the sst49lf016c. these are: a 0 through a 20 and a 22. address a 22 has the special function of directing reads and writes to the flash core (a 22 =1) or to the register space (a 22 =0). invalid msize field: if the sst49lf016c receives an invalid size field during a firmware memory read or write operation, the device will reset and no operation will be attempted. the device w ill not generate any kind of response in this situation. the sst49lf016c will only respond to values listed in table 6. once valid start, idsel, and msize are received, the sst49lf016c will always comp lete the bus cycle. how- ever, if the device is busy performing a flash erase or pro- gram operation, no new internal memory write will be executed. as long as the states of lad[3:0] and lframe# are known, the response of the st49lf016c to signals received during the cycle is predictable. non-boundary-aligned address: the sst49lf016c accepts multi-byte transfers for both read and write opera- tions. the device address space is divided into uniform page sizes 2, 4, 16, or 128 bytes wide, according to the msize value (see table 6). the host issues only one address in the maddr field of the firmware memory cycle, but multiple bytes are read from or written to the device. for this reason the maddr address should be page boundary-aligned. this means the address should be aligned to a word boundary (a 0 = 0) for a 2-byte transfer, a double word boundary (e.g. a 0 = 0, a 1 = 0) for a 4-byte transfer, and so on. if the address supplied by the host is not page boundary-a ligned, the sst49lf016c will force a boundary alignment, starting the multi-byte read or write operation from the lower byte of the addressed page. table 6: valid msize field values for firmware memory cycles msize direction size of transfer 0000 r/w 1 byte 0001 r/w 2 byte 0010 r/w 4 byte 0100 r 16 byte 0111 r 128 byte t6.0 1237
data sheet 16 mbit lpc serial flash sst49lf016c 13 ?2008 silicon storage technology, inc. s71237-08-000 5/08 multiple device selection multiple lpc serial flash devices may be strapped to increase memory densities in a system. the four id pins, id[3:0], allow up to 16 devices to be attached to the same bus by using different id strapping in a system. bios sup- port, bus loading, or the attaching bridge may limit this num- ber. the boot device must have an id of 0000b (determined by id[3:0]); subsequent devices use incremental number- ing. equal density must be used with multiple devices. multiple device selection for firmware memory cycle for firmware memory read/write cycles, hardware strap- ping values on id[3:0] must match the values in idsel field. the sst49lf016c will compare these bits with id[3:0]?s strapping values. if there is a mismatch, the device will ignore the remainder of the cycle. see table 7 for multi- ple device selection configuration. table 7: firmware memory multiple device selection configuration device # id[3:0] idsel 0 (boot device) 0000 0000 1 0001 0001 2 0010 0010 3 0011 0011 4 0100 0100 5 0101 0101 6 0110 0110 7 0111 0111 8 1000 1000 9 1001 1001 10 1010 1010 11 1011 1011 12 1100 1100 13 1101 1101 14 1110 1110 15 1111 1111 t7.0 1237
14 data sheet 16 mbit lpc serial flash sst49lf016c ?2008 silicon storage technology, inc. s71237-08-000 5/08 device commands device operation is controlled by commands written to the command user interface (cui). execution of a specific command is handled by internal functions after a cui receives and processes the command. after power-up or a reset operation the device enters read mode. commands consist of one or two sequential bus-write operations. the commands are summarized in table 8, ?software com- mand sequence?. table 8: software command sequence command bus cycles required first bus cycle second bus cycle oper addr 1 1. this value must be a valid address within t he device memory address space. x can be v ih or v il, but no other value. data oper addr 1 data read-array/reset 1 write x ffh read-software-id 2 / read-security-id 3 2. sst manufacturer?s id = bfh, is read with a 20 -a 0 = 0. sst49lf016c device id = 5ch, is read with a 20 -a 1 = 0, a 0 = 1. following the read-software-id/read-security-id command, read operations access manufacturer?s id and device id or security id. 3. following the read-software-id/read-security-id command, read operat ions access manufacturer?s id and device id or security id. read-software-id/read-security-id and read-status-register will return register data until another valid command is written . 2 write x 90h read ia 4 4. ia = device identification address/security id address. id 5 5. id = data read from identifier codes/data read from security id read-status-register 3 2 write x 70h read x srd 6 6. srd = data read from status register clear-status-register 1 write x 50h sector-erase 7 7. the sector or block must not be write-locked when attempting erase or program operations. attempts to issue an erase or program command to a write-locked sector/block will fail. 2 write x 30h write sax 8 8. sa x for sector-erase address ba x for block-erase address d0h block-erase 7 2 write x 20h write bax d0h program 7 , 9 9. the program command operates on multiple bytes. 2 write x 40h or 10h write wa 10 10. wa = address of memory location to be written wd 11 11. wd = data to be written at location wa program-/erase-suspend 1 write x b0h program-/erase-resume 1 write x d0h user-security-id-program 12 12. valid addresses for the user security id space are from fffc 0188h to fffc 019fh. 2 write x a5h write wa 10 data user-security-id-program-lockout 2 write x 85h write x 00h t8.0 1237
data sheet 16 mbit lpc serial flash sst49lf016c 15 ?2008 silicon storage technology, inc. s71237-08-000 5/08 read-array command upon initial device power-up and after exit from reset, the device defaults to the read array mode. this operation can also be initiated by writi ng the read-array command. (see table 8.) the device remains available for array reads until another command is written. once an internal program/ erase operation star ts, the device will not recognize the read-array command until the operation is completed, unless the operation is suspended via a program/erase suspend command. read-software-id command the read-software-id operation is initiated by writing the read-software-id command. following the command, the device will output the manufacturer?s id and device id from the addresses shown in table 9. any other valid command will terminate the read-software-id operation. the read-software-id command is the same as the read- security-id command. see ?security id commands? on page 17. read-status-register command the status register may be read to determine when a sec- tor-/block-erase or program completes, and whether the operation completed successfully. the status register may be read at any time by writing the read-status-register command. after writing this command, all subsequent read operations will return data from the status register until another valid command is written. the default value of the status register after device power- up or reset is 80h. clear-status-r egister command the user can reset the status register?s block protect sta- tus (bps) bit to 0 by issuing a clear-status-register com- mand. device power-up and hardware reset will also reset bps to 0. table 9: product identification address 1 data manufacturer?s id fffc 0000h bfh device id sst49lf016c fffc 0001h 5ch t9.1 1237 1. address shown in this column is for boot device only. address locations should appear elsewhere in the 4 gbyte system memory map depending on id strapping values on id[3:0] pins when multiple lpc memory devices are used in a system. table 10: software status register bit name function 0 res reserved for future use 1 bps block protect status the block write-lock bit should be interrogated on ly after erase or program command is issued. it informs the system whether or not the selected block is locked. bps does not provide a continuous i ndication of write- lock bit value. 0: block unlocked 1: operation aborted, block write-lock bit set. 2:5 res reserved for future use 6 ess erase suspend status 0: erase in progress/completed 1: erase suspended 7 wsms write state machine status check wsms to determine erase or program completion. 0: busy 1: ready t10.0 1237
16 data sheet 16 mbit lpc serial flash sst49lf016c ?2008 silicon storage technology, inc. s71237-08-000 5/08 sector-/block-erase command the erase command operates on one sector or block at a time. this command requires an (arbitrary) address within the sector or block to be erased. note that a sector/block erase operation changes all sector/block byte data to ffh. if a read operation is performed after issuing the erase command, the device will automatically output status reg- ister data. the system can poll the status register in order to verify the completion of the sector/block erase operation (please refer to table 10, status register definition). if a sector/block erase is attempted on a locked block, the operation will fail and the data in the sector/block will not be changed. in this case, the status register will report the error (bps=1). program command the program command operates on multiple bytes (refer to table 5). this command specifies the address and data to be programmed. during the program operation the device automatically outputs the status register data when read. the system can poll the status register in order to verify the completion of the program operation (refer to table 10, ?software status register?). if a program opera- tion is attempted on a locked block, the operation will fail and the data in the address ed byte will not be changed. in this case, the status register will report the error (bps=1). program-/erase-suspend or program-/erase-resu me operations the program-suspend and erase-suspend operations share the same software command sequence (b0h). the program-resume and erase-resume operations share the same software command sequence (d0h). see table 8, ?software command sequence? on page 14. erase-suspend/ erase-resume commands the erase suspend command allows sector-erase or block-erase interruption in order to read or program data in another block of memory. once the erase-suspend command is executed, the device will suspend any on- going erase operation within time t es (10 s). the device outputs status register data when read after the erase- suspend command is written. the system is able to deter- mine when the erase operation has been completed (wsms=1) by polling the status register. after an erase- suspend, the de vice will set the status register ess bit (ess=1) if the erase has been successfully suspended (refer to table 10, ?software status register?). the erase- resume command resumes the erase operation that had been previously suspended. after a successful erase-suspend, a read-array com- mand may be written to read data from a sector/block other than the suspended sector/block. a program com- mand sequence may also be issued during erase sus- pend to program data in memory locations other than the sector/block currently in the erase-suspend mode. if a read-array command is written to an address within the suspended sector/block this may result in reading invalid data. if a program command is written to an address within the suspended sector/block the command is acknowl- edged but rejected. other valid commands while erase is suspended include read-status -register, read-device- id, and erase-resume. the erase-resume command resumes the erase process in the suspended sector or block. after the erase-resume command is written, the device will continue the erase pro- cess. erase cannot resume until any program operation ini- tiated during erase-suspend has completed. suspended operations cannot be nested: the system needs to com- plete or resume any previously suspended operation before a new operation can be suspended. see figure 8 for flowchart.
data sheet 16 mbit lpc serial flash sst49lf016c 17 ?2008 silicon storage technology, inc. s71237-08-000 5/08 program-suspend/ program-resume command the program-suspend and program-resume commands have no influence on the device. since the device requires a maximum of t bp (10 s) in order to program a byte (see table 26), when a program-suspend command is written, the suspended byte program o peration will always be suc- cessfully completed within the suspend latency time (t es = t bp = 10 s). security id commands the sst49lf016c device offers a 256-bit security id space. the security id space is divided into two parts. one 64-bit segment is programmed at sst with a unique 64-bit number: this number cannot be changed by the user. the other segment is 192-bit wide and is left blank: this space is available for customers and can be programmed as desired. the user-security-id-program command is shown in table 8, ?software command sequence?. use the memory addresses specified in table 11 for security id program- ming. once the customer segment is programmed, it can be locked to prevent any alteration. the user-security-id- program-lockout command is shown in table 8, ?software command sequence?. in order to read the security id information, the user can issue a read security id command (90h) to the device. at this point the device enters the read-software-id/read- security-id mode. the security id information can be read at the memory addresses in table 11. a read-array/reset command (ffh) must then be issued to the device in order to exit the read-software-id/read- security-id mode and return to read-array mode. an alternate method to read the security id information is to read the security id registers located into the register space as described in the ?sec urity id registers? section. figure 8: erase-suspend flow chart erase sector/block write b0h to any valid device memory address write 70h to any valid device memory address finished? no yes read status register write d0h to any valid device memory address erase resumed wsms = 1 ye s no ess = 1 ye s erase completed 1237 fc_erase-sus.1 no write the read-array command to read from another sector/block or write the program command to program another sector/block erase-suspend command read-status-register command erase-resume command table 11: security id addresses address range security id segment size fffc 0180 to fffc 0187 factory-programmed 8 bytes ? 64 bit fffc 0188 to fffc 019f user-programmed 24 bytes ? 192 bit t11.0 1237
18 data sheet 16 mbit lpc serial flash sst49lf016c ?2008 silicon storage technology, inc. s71237-08-000 5/08 registers there are five types of registers available on the sst49lf016c, the multi-byte read/write configuration registers (for firmware memory cycle), general purpose inputs registers, block locking registers, security id regis- ter, and the jedec id registers. these registers appear at their respective address location in the 4 gbyte system memory map. unused register locations will read as 00h. any attempt to read or write any register during an internal write operation will be ignored. read or write access to the register during an internal pro- gram/erase operation will be completed as follows: ? multi-byte read/write configuration registers, general purpose inputs register, and block lock- ing registers can be accessed normally ? security id register and the jedec id registers can not be accessed (readi ng these registers will return unused register data 00h). multi-byte read/write configuration registers (firmware memory cycle) the multi-byte read/write configuration (mbr) registers are four 8-bit read-only registers located at addresses ffbc0005-ffbc0008 for boot configured device (see table 13). these registers are accessible using firmware memory read cycle only. these registers contain informa- tion about multi-byte read and write access sizes that will be accepted for firmware memory multi-byte read com- mands. the registers are not available in aai mode. in case of multi-byte firmware memory register reads, the device will return register data for the addressed register until the command finishes, or is aborted. general purpose inputs register the general purpose inputs register (gpi_reg) passes the state of gpi[4:0] pins on the sst49lf016c. it is rec- ommended that the gpi[4:0] pins be in the desired state before lframe# is brought low for the beginning of the bus cycle, and remain in that state until the end of the cycle. there is no default value since this is a pass-through regis- ter. the gpi_reg register for the boot device appears at ffbc0100h in the 4 gbyte system memory map, and will appear elsewhere if the device is not the boot device (see table 12). this register is not available to be read when the device is in an erase/program operation. in case of multi- byte firmware memory cycle register reads, the device will return register data for the addressed register until the com- mand finishes, or is aborted. table 12: general purpose register register register address 1 1. address shown in this column is for boot device only. address locations should appear elsewhere in the 4 gbyte system memory map depending on id strapping values on id[3:0] pins when multiple lpc memory devices are used in a system. default value access gpi_reg ffbc 0100h n/a r t12.0 1237 table 13: multi-byte read/write configuration registers (firmware memory cycle only) register register address 1 1. address shown in this column is for boot device only. addre ss locations should appear elsewhere in the 4 gbyte system memory map depending on id strapping values on id[3:0] pins when multiple lpc memory devices are used in a system. data access description multi_byte_read_l ffbc 0005h 0100 1011b r device supports 1,2,4, 16, 128 byte reads multi_byte_read_h ffbc 0006h 0000 0000b r future expansion for read multi_byte_write_l ffbc 0007h 0000 0011b r device supports 1, 2, 4 byte write multi_byte_write_h ffbc 0008h 0000 0000b r future expansion for write t13.0 1237
data sheet 16 mbit lpc serial flash sst49lf016c 19 ?2008 silicon storage technology, inc. s71237-08-000 5/08 block locking registers sst49lf016c provides software controlled lock protection through a set of block locking registers. the block locking registers are read/write registers and they are accessible through standard addressable memory locations specified in table 14. unused register locations will return 00h if read. in case of multi-byte register reads with firmware memory cycle, the device will return register data for the addressed register until the command finishes, or is aborted. table 14: block locking registers register block size sst49lf016c protected memory address 1 range memory map register address 1 t_block_lk 16k 1fffffh-1fc000h ffbfc002h t_minus01_lk 8k 1fbfffh-1fa000h ffbfa002h t_minus02_lk 8k 1f9fffh-1f8000h ffbf8002h t_minus03_lk 32k 1f7fffh-1f0000h ffbf0002h t_minus04_lk 64k 1effffh-1e0000h ffbe0002h t_minus05_lk 64k 1dffffh-1d0000h ffbd0002h t_minus06_lk 64k 1cffffh-1c0000h ffbc0002h t_minus07_lk 64k 1bffffh-1b0000h ffbb0002h t_minus08_lk 64k 1affffh-1a0000h ffba0002h t_minus09_lk 64k 19ffffh-190000h ffb90002h t_minus10_lk 64k 18ffffh-180000h ffb80002h t_minus11_lk 64k 17ffffh-170000h ffb70002h t_minus12_lk 64k 16ffffh-160000h ffb60002h t_minus13_lk 64k 15ffffh-150000h ffb50002h t_minus14_lk 64k 14ffffh-140000h ffb40002h t_minus15_lk 64k 13ffffh-130000h ffb30002h t_minus16_lk 64k 12ffffh-120000h ffb20002h t_minus17_lk 64k 11ffffh-110000h ffb10002h t_minus18_lk 64k 10ffffh-100000h ffb00002h t_minus19_lk 64k 0fffffh-0f0000h ffaf0002h t_minus20_lk 64k 0effffh-0e0000h ffae0002h t_minus21_lk 64k 0dffffh-0d0000h ffad0002h t_minus22_lk 64k 0cffffh-0c0000h ffac0002h t_minus23_lk 64k 0bffffh-0b0000h ffab0002h t_minus24_lk 64k 0affffh-0a0000h ffaa0002h t_minus25_lk 64k 09ffffh-090000h ffa90002h t_minus26_lk 64k 08ffffh-080000h ffa80002h t_minus27_lk 64k 07ffffh-070000h ffa70002h t_minus28_lk 64k 06ffffh-060000h ffa60002h t_minus29_lk 64k 05ffffh-050000h ffa50002h t_minus30_lk 64k 04ffffh-040000h ffa40002h t_minus31_lk 64k 03ffffh-030000h ffa30002h t_minus32_lk 64k 02ffffh-020000h ffa20002h t_minus33_lk 64k 01ffffh-010000h ffa10002h t_minus34_lk 64k 00ffffh-000000h ffa00002h t14.0 1237 1. address shown in this column is for boot device only. address locations should appear elsewhere in the 4 gbyte system memory map depending on id strapping values on id[3:0] pins when multiple lpc memory devices are used in a system.
20 data sheet 16 mbit lpc serial flash sst49lf016c ?2008 silicon storage technology, inc. s71237-08-000 5/08 write-lock bit the write-lock bit, bit 0, controls the lock state described in table 15. the default write status of all blocks after power up is write locked. when bit 0 of the block locking register is set, program and erase operations for the corre- sponding block are prevented. clearing the write-lock bit will unprotect the block. the write-lock bit must be cleared prior to starting a program or erase operation since it is sampled at the beginning of the operation. the write-lock bit functions in conjunction with the hardware write lock pin tbl# for the top boot block. when tbl# is low, it over- rides the software locking scheme. the top boot block locking register does not indicate the state of the tbl# pin. the write-lock bit functions in conjunction with the hardware wp#/aai pin for the remaining blocks (blocks 0 to 33 for 49lf016c). when wp#/aai is low, it overrides the software locking scheme. the block locking register does not indicate the state of the wp#/aai pin. lock-down bit the lock-down bit, bit 1, controls the block locking regis- ter as described in table 15. when in lpc interface mode, the default lock down status of all blocks upon power-up is not locked down. once the lock-down bit is set, any future attempted changes to that block locking register will be ignored. the lock-down bit is only cleared upon a device reset with rst# or init# or power down. current lock down status of a particular block can be determined by reading the corresponding lock-down bit. once a block?s lock-down bit is set, the read-lock and write-lock bits for that block can no longer be modified: the block is locked down in its current state of read/write accessibility. read-lock bit the default read status of all blocks upon power-up is read- unlocked. when a block?s read lock bit is set, data cannot be read from that block. an attempted read from a read- locked block will result in the data 00h. the read lock status can be unlocked by clearing the read lock bit: this can only be done provided that the block is not locked down. the current read lock status of a particular block can be deter- mined by reading the corresponding read-lock bit. table 15: block locking register bits reserved bit [7:3] read-lock bit [2] lock-down bit [1] write-lock bit [0] lock status 00000 0 0 0 full access 00000 0 0 1 write locked (default state at power-up) 00000 0 1 0 locked open (full access locked down) 00000 0 1 1 write locked down 00000 1 0 0 block read locked (registers alterable) 00000 1 0 1 block read & write lock (registers alterable) 00000 1 1 0 block read locked down (registers not alterable) 00000 1 1 1 block read & write lock down (registers not alterable) t15.0 1237
data sheet 16 mbit lpc serial flash sst49lf016c 21 ?2008 silicon storage technology, inc. s71237-08-000 5/08 security id registers the sst49lf016c device offers a 256-bit security id reg- ister space. the security id space is divided into two seg- ments - one (64-bits) factory programmed segment and one (192 bits) user programmed segment. the first seg- ment is programmed and locked at sst with a unique 64- bit number. the user segment (192 bits) is left blank (ffh) for the customer to be programmed as desired. refer to table 8, ?software command sequence? for more details. the security id information and its write lock/unlock sta- tus can be read in the regist er access space for execute- in-place type of applications. (see table 16.) the write lock-out status of the security id space can be read from the sec_id_write_lock register (see table 16). the sec_id_write_lock register is a read-only register that is accessible at the address location specified in table 16. in case of multi-byte register reads with firmware memory cycle, for sec_id_write_lock register, the device will return register data for the addressed register until the com- mand finishes, or is aborted. in the case of multi-byte register reads with firmware memory cycle, for all the sec_id_byte registers, the device will return page-aligned sequential register data with wrap-around until the command finishes, or is aborted. jedec id registers the jedec id registers for the boot device appear at ffbc0000h and ffbc0001h in the 4 gbyte system memory map, and will appear el sewhere if the device is not the boot device. this register is not available to be read when the device is in erase/program operation. unused register location will read as 00h. see table 17 for the jedec device id code. in case of multi-byte register reads with firmware memory cycle, the device will return register data for the addressed register until the command finishes, or is aborted. table 16: security id registers register register address 1 1. address shown in this column is for boot device only. addre ss locations should appear elsewhere in the 4 gbyte system memory map depending on id strapping values on id[3:0] pins when multiple lpc memory devices are used in a system. value access description sec_id__write_lock ffbc0102h 0000 0000b 0000 0001b r write unlocked write locked sec_id_byte_0 ffbc0180h r factory programmed sec_id_byte_1 ffbc0181h r factory programmed sec_id_byte_2 ffbc0182h r factory programmed sec_id_byte_3 ffbc0183h r factory programmed ? ? ? ? sec_id_byte_7 ffbc0187h r factory programmed sec_id_byte_8 ffbc0188h r user programmed sec_id_byte_9 ffbc0189h r user programmed ? ? ? ? sec_id_byte_30 ffbc019eh r user programmed sec_id_byte_31 ffbc019fh r user programmed t16.0 1237 table 17: jedec id registers register register address 1 default value access manuf_reg ffbc 0000h bfh r dev_reg ffbc 0001h 5ch r t17.0 1237 1. address shown in this column is for boot device only. address locations should appear elsewhere in the 4 gbyte system memory map depending on id strapping values on id[3:0] pins when multiple lpc memory devices are used in a system.
22 data sheet 16 mbit lpc serial flash sst49lf016c ?2008 silicon storage technology, inc. s71237-08-000 5/08 auto-address increm ent (aai) mode aai mode with mult i-byte programming aai mode with multi-byte programming is provided for high- speed production programming. auto-address increment mode requires only one address load for each 128-byte page of data. taking the wp#/aai pin to the supervoltage v h enables the aai mode. the aai command is started as a normal firmware memory cycle. ld# should be low (v il ) as long as data is being loaded into the device. in the maddr field, the host may input any address within the 128-byte page to be programmed. the least significant seven bits of the address field will be ignored a nd the device will begin pro- gramming at the beginning of the 128-byte page (i.e., the address will be page-aligned). the device re ady/busy sta- tus is output on the ry/by# pin. data is accepted until the internal buffer is full. at that point ry/by# goes low (busy) to indicate that the internal buffer is full and cannot accept any more data. when the device is ready, ry/by# pin goes high and indicates to the host that more data (the next group of bytes) can be accepted by the internal data buffer (see table 18 and figure 9). after loading the final byte(s) of the 128-byte page, the ry/ by# signal remains low until the completion of internal pro- gramming. after the completion of programming, the part will go into idle mode and the ry/by# will go high indicating that the aai command has been completed (see table 18). a subsequent aai command may be initiated to begin pro- gramming the next 128-byte page. data will be accepted by the de vice as long as ld# is low and ry/by# is high (until the last byte of the 128-byte page has been entered). for partial data-loads (i.e., less than 128 bytes), ld# may be taken high (v ih ) to end the data loading. if ld# goes high before the full 128-byte page has been entered, the device will program the data which has been entered to that point, and then terminate the aai page programming command. any incompletely loaded data byte (nibble) will not be programmed. the device will signify completion of the command by driving ryby# high. once ry/by# goes high, ld# can be taken low to begin a new aai programming operation at a different address location. the ry/by# pin will stay low while internal programming completes. when the entire 128-byte page has been pro- grammed, the device will return to the idle mode and the ry/by# pin will go high (v ih ) to indicate the aai command has been completed. the user may terminate aai programming by dropping the wp#/aai pin to ttl levels (v ih /v il ) as long as ld# is high and ry/by# returns to high indicating the completion of the aai cycle. software block-lo cking will be disabled in aai mode (all blocks will be write-unlocked). if aai drops below the supervoltage v h before ry/by# returns to high (and ld# high), the contents of the page may be indeterminate. table 18: ld# input and ry/by# status in aai mode ld# state ry/by# status ry/by# flag indication l h device is ready, can accept more data until the last (128 th ) byte. l l device is busy, cannot accept more data l h device is ready for next operation if previous data is the last (128 th ) byte. h h device is ready for next operation h l device is busy programming t18.1 1237
data sheet 16 mbit lpc serial flash sst49lf016c 23 ?2008 silicon storage technology, inc. s71237-08-000 5/08 aai data load protocol figure 9: aai load protocol waveform table 19: aai programming cycle (initiated with wp#/aai at v h only) clock cycle field name field contents lad[3:0] comments 1 start 1110 in lframe# must be active (low) for the part to respond. only the last start field (before lframe# transitions high) should be recognized. the start field contents indicate a firmware memory write cycle. (1110b) 2 idsel 0000b to 1111b in id works identically to firmware memory cycle. this field indicates which sst49lf016c device should respond. if the idsel (id select) field matches the value of id[3:0], then that particular device will respond to the whole bus cycle. 3-9 maddr yyyy in these seven clock cycles make up the 28-bit memory address. yyyy is one nibble of the entire address. addresses are transferred most-significant nibble first. only bits [20:7] of the tota l address [27:0] are used for aai mode. the rest are ?don?t care?. 10 msize kkkk in msize field is don?t care when in aai mode 11-266 data zzzz in data is transmitted to the device least significant nib- ble first, from byte 0 to byte 127 as long as the ry/by# is high and ld# low. the host will pause the clock and data stream when ry/by# goes low until it returns high, signifying that the chip is ready for more data t19.0 1237 123456789101112 266 264 wp#/aai lad[3:0] lclk (data strobe input) ld# v h lframe# ry/by# start idsel msize maddr address byte 0 byte n byte n+1 byte 2n byte 126 byte 127 data data data data data data 1237 f08.1
24 data sheet 16 mbit lpc serial flash sst49lf016c ?2008 silicon storage technology, inc. s71237-08-000 5/08 electrical specifications the ac and dc specifications for the lpc interface signals (lad [3:0], lframe#, lclck and rst#) as defined in section 4.2.2.4 of the pci local bus specification, rev. 2.1. refer to table 20 for the dc voltage and current specifications. refer to table 24 through table 26 for the ac timing specifications for clock, read, write, and reset operations. absolute maximum stress ratings (applied conditions greater than t hose listed under ?absolute maximum stress ratings? may cause permanent damage to the device. this is a stress rating only and functional operation of the device at these conditions or conditions greater t han those defined in the operational sections of this data sheet is not implied. exposu re to absolute maximum stress rating co nditions may affect device reliability.) temperature under bias . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -55c to +125c storage temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -65c to +150c d.c. voltage on any pin to ground potential . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0 .5v to v dd +0.5v transient voltage (<20 ns) on any pin (except wp#/aai) to ground potential 1 . . . . . . . . . . . . . . -2.0v to v dd +2.0v 1. do not violate processor or chipse t specification regarding init# voltage. voltage on wp#/aai pin to ground potential 2 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.5v to 11.0v 2. the maximum dc voltage on wp#/aai pin may reach 11v for periods <20ns. package power dissipation capability (t a =25c) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.0w surface mount solder reflow temperature 3 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 260c for 10 seconds 3. excluding certain with-pb 32-plcc units, all packages are 260 c capable in both non-pb and with-pb solder versions. certain with-pb 32-plcc package types are capable of 240 c for 10 seconds; please consult the factory for the latest information. output short circuit current 4 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50 ma 4. outputs shorted for no more than one second. no more than one output shorted at a time. o perating r ange range ambient temp v dd commercial 0c to +85c 3.0-3.6v ac c onditions of t est input rise/fall time . . . . . . . . . . . . . . . 3 ns output load . . . . . . . . . . . . . . . . . . . . . c l = 30 pf see figures 15 and 16
data sheet 16 mbit lpc serial flash sst49lf016c 25 ?2008 silicon storage technology, inc. s71237-08-000 5/08 dc characteristics table 20: dc operating characteristics at 33 mhz and 66 mhz (all interfaces) symbol parameter limits test conditions min max units i dd 1 1. i dd active while a read or write (program or erase) operation is in progress. active v dd current lclk (lpc mode) =v ilt /v iht all other inputs=v il or v ih read 18 ma all outputs = open, v dd =v dd max single-/dual-byte program, erase 40 ma quad-byte program 60 ma i sb standby v dd current (lpc interface) 100 a lclk (lpc mode) =v ilt /v iht at lframe#=.9v dd v dd =v dd max all other inputs 0.9 v dd or 0.1 v dd i ry 2 2. the device is in ready mode w hen no activity is on the lpc bus. ready mode v dd current 10 ma lclk (lpc mode) =v ilt /v iht lframe#=v il , v dd =v dd max all other inputs 0.9 v dd or 0.1 v dd i i input leakage current for id[3:0] pins 200 a v in =gnd to v dd , v dd =v dd max i li input leakage current 1 a v in =gnd to v dd , v dd =v dd max i lo output leakage current 1 a v out =gnd to v dd , v dd =v dd max i h supervoltage current for wp#/aai 200 a v h supervoltage for wp#/aai 8.5 9.5 v v ihi 3 3. do not violate processor or chipse t specification regarding init# voltage. init# input high voltage 1.1 v dd +0.5 v v dd =v dd max v ili 3 init# input low voltage -0.5 0.4 v v dd =v dd min v il input low voltage -0.5 0.3 v dd vv dd =v dd min v ih input high voltage 0.5 v dd v dd +0.5 v v dd =v dd max v ol output low voltage 0.1 v dd vi ol =1500 a, v dd =v dd min v oh output high voltage 0.9 v dd vi oh =-500 a, v dd =v dd min t20.1 1237 table 21: recommended system power-up timings symbol parameter minimum units t pu-read 1 1. this parameter is measured only for init ial qualification and after a design or proc ess change that could affect this paramet er power-up to read operation 100 s t pu-write 1 power-up to write operation 100 s t21.0 1237 table 22: pin capacitance (v dd =3.3v, t a =25 c, f=1 mhz, other pins open) parameter description test condition maximum c i/o 1 1. this parameter is measured only for init ial qualification and after a design or proc ess change that could affect this paramet er. i/o pin capacitance v i/o =0v 12 pf c in 1 input capacitance v in =0v 12 pf l pin 2 2. refer to pci spec. pin inductance 20 nh t22.0 1237
26 data sheet 16 mbit lpc serial flash sst49lf016c ?2008 silicon storage technology, inc. s71237-08-000 5/08 figure 10: lclk waveform (lpc mode) table 23: reliability characteristics symbol parameter minimum specification units test method n end 1 endurance 10,000 cycles jedec standard a117 t dr 1 data retention 100 years jedec standard a103 i lt h 1 latch up 100 + i dd ma jedec standard 78 t23.0 1237 1. this parameter is measured only for init ial qualification and after a design or proc ess change that could affect this paramet er. table 24: clock timing parameters (lpc mode) symbol parameter 33 mhz 66 mhz units min max min max t cyc cycle time 30 15 ns t high lclk high time 11 6.5 ns t low lclk low time 11 6.5 ns - lclk slew rate (peak-to-peak) 1 4 1 4 v/ns - rst# or init# slew rate 50 50 mv/ns t24.0 1237 1237 f09.0 0.4 v dd p-to-p (minimum) t cyc t high t low 0.4 v dd 0.3 v dd 0.6 v dd 0.2 v dd 0.5 v dd
data sheet 16 mbit lpc serial flash sst49lf016c 27 ?2008 silicon storage technology, inc. s71237-08-000 5/08 figure 11: reset timing diagram (lpc m ode ) table 25: reset timi ng parameters, v dd =3.0-3.6v (lpc mode) symbol parameter min max units t prst v dd stable to reset high 100 s t rstp rst# pulse width 100 ns t rstf rst# low to output float 48 ns t rst 1 rst# high to lframe# low 5 lclk cycles t rste rst# low to reset during sector-/block-erase or program 10 s t25.0 1237 1. there will be a latency due to t rste if a reset procedure is performed during a program or erase operation, v dd rst#/init# lframe# lad[3:0] 1237 f10.1 t prst t rstp t rstf t rste sector-/block-erase or program operation aborted t rst
28 data sheet 16 mbit lpc serial flash sst49lf016c ?2008 silicon storage technology, inc. s71237-08-000 5/08 ac characteristics table 26: read/write cycle timing parameters, v dd =3.0-3.6v (lpc mode) symbol parameter 33 mhz 66 mhz units min max min max t cyc clock cycle time 30 15 ns t su data set up time to clock rising 7 7 ns t dh clock rising to data hold time 0 0 ns t val 1 1. minimum and maximum times have different loads. see pci spec clock rising to data valid 2 11 2 7 ns t bp byte programming time 10 10 s t se sector-erase time 25 25 ms t be block-erase time 25 25 ms t es program/erase-suspend latency 10 10 s t on clock rising to active (float to active delay) 2 2 ns t off clock rising to inactive (active to float delay) 28 28 ns t26.0 1237 table 27: ac input/output specifications (lpc mode) symbol parameter min max units conditions i oh (ac) switching current high -12 v dd ma 0 < v out 0.3v dd -17.1(v dd -v out )ma0.3v dd < v out < 0.9v dd equation c 1 1. see pci spec. 0.7v dd < v out < v dd (test point) -32 v dd ma v out = 0.7v dd i ol (ac) switching current low 16 v dd 26.7 v out equation d 1 ma ma v dd >v out 0.6v dd 0.6v dd > v out > 0.1v dd 0.18v dd > v out > 0 (test point) 38 v dd ma v out = 0.18v dd i cl low clamp current -25+(v in +1)/0.015 ma -3 < v in -1 i ch high clamp current 25+(v in -v dd -1)/0.015 ma v dd +4 > v in v dd +1 slewr 2 2. pci specification output load is used. output rise slew rate 1 4 v/ns 0.2v dd -0.6v dd load slewf 2 output fall slew rate 1 4 v/ns 0.6v dd -0.2v dd load t27.0 1237
data sheet 16 mbit lpc serial flash sst49lf016c 29 ?2008 silicon storage technology, inc. s71237-08-000 5/08 figure 12: output timing parameters (lpc mode) figure 13: input timing parameters (lpc mode) table 28: interface measurement condition parameters (lpc mode) symbol value units v th 1 1. the input test environment is done with 0.1 v dd of overdrive over v ih and v il . timing parameters must be met with no more over- drive than this. v max specifies the maximum peak-to-peak waveform allowed for measuring input timing. production testing may use different voltage values, but must correlate results back to these parameters. 0.6 v dd v v tl 1 0.2 v dd v v test 0.4 v dd v v max 1 0.4 v dd v input signal edge rate 1 v/ns t28.0 1237 t val t off t on 1237 f11.0 lclk lad [3:0] (valid output data) lad [3:0] (float output data) v test v tl v th t su t dh inputs valid 1237 f12.0 lclk lad [3:0] (valid input data) v test v tl v max v th
30 data sheet 16 mbit lpc serial flash sst49lf016c ?2008 silicon storage technology, inc. s71237-08-000 5/08 figure 14: input timing parameters (aai mode) table 29: input cycle timing parameters, v dd =3.0-3.6v (aai mode) symbol parameter min max units t acyc clock cycle time 135 ns t asu data set up time to clock rising 25 ns t adh clock rising to data hold time 25 ns t rb ry/by# ld# falling 25 ns t ldsu ld# set up time 25 ns t lddh ld# hold time 25 ns t29.3 1237 t asu t adh t acyc inputs valid 1237 f13.3 lclk lad [3:0] (valid input data) v test v tl v max v th wp#/aai v h ld# t ldsu t lddh t rb ry/by#
data sheet 16 mbit lpc serial flash sst49lf016c 31 ?2008 silicon storage technology, inc. s71237-08-000 5/08 figure 15: ac input/output reference waveforms figure 16: a test load example 1237 f14.0 reference points output input v it v iht v ilt v ot ac test inputs are driven at v iht (0.9 v dd ) for a logic ?1? and v ilt (0.1 v dd ) for a logic ?0?. measurement reference points for inputs and outputs are v it (0.5 v dd ) and v ot (0.5 v dd ). input rise and fall times (10% ? 90%) are <3 ns. note: v it - v input te s t v ot - v output te s t v iht - v input high test v ilt - v input low test 1237 f15.0 to tester to dut c l
32 data sheet 16 mbit lpc serial flash sst49lf016c ?2008 silicon storage technology, inc. s71237-08-000 5/08 product ordering information valid combinations for sst49lf016c sst49lf016c-33-4c-nhe sst49lf016c-33-4c-whe sst49lf016c-33-4c-eie SST49LF016C-66-4C-NHE sst49lf016c-66-4c-whe note: valid combinations are those products in mass producti on or will be in mass production. consult your sst sales representative to confirm availability of valid combinat ions and to determine availability of new combinations. sst49lf 016c - xx - 4c - xh e sst49 l f xxx c- xx -x x -xx x environmental attribute e 1 = non-pb package modifier h = 32 leads i = 40 leads package type n = plcc w = tsop (type 1, die up, 8mm x 14mm) e = tsop (type 1, die up, 10mm x 20mm) temperature range c = commercial = 0c to +85c minimum endurance 4 = 10,000 cycles operating frequency 33 = 33 mhz 66 = 66 mhz device density 016 = 16 mbit voltag e l = 3.0-3.6v product series 49 = lpc flash memories 1. environmental suffix ?e? denotes non-pb solder. sst non-pb solder devices are ?rohs compliant?.
data sheet 16 mbit lpc serial flash sst49lf016c 33 ?2008 silicon storage technology, inc. s71237-08-000 5/08 packaging diagrams figure 17: 32-lead plastic lead chip carrier (plcc) sst package code: nh .040 .030 .021 .013 .530 .490 .095 .075 .140 .125 .032 .026 .032 .026 .029 .023 .453 .447 .553 .547 .595 .585 .495 .485 .112 .106 .042 .048 .048 .042 .015 min. top view side view bottom view 1 232 .400 bsc 32-plcc-nh-3 note: 1. complies with jedec publication 95 ms-016 ae dimensions, although some dimensions may be more stringent. 2. all linear dimensions are in inches (max/min). 3. dimensions do not include mold flash. maximum allowable mold flash is .008 inches. 4. coplanarity: 4 mils. .050 bsc .050 bsc optional pin #1 identifier .020 r. max. r. x 30
34 data sheet 16 mbit lpc serial flash sst49lf016c ?2008 silicon storage technology, inc. s71237-08-000 5/08 figure 18: 32-lead thin small outline package (tsop) 8mm x 14mm sst package code: wh 32-tsop-wh-7 note: 1. complies with jedec publication 95 mo-142 ba dimensions, although some dimensions may be more stringent. 2. all linear dimensions are in millimeters (max/min). 3. coplanarity: 0.1 mm 4. maximum allowable mold flash is 0.15 mm at the package ends, and 0.25 mm between leads. 1.20 max. 1mm pin # 1 identifier 12.50 12.30 14.20 13.80 0.70 0.50 8.10 7.90 0.27 0.17 0. 50 bsc 1.05 0.95 0.15 0.05 0.70 0.50 0- 5 detail
data sheet 16 mbit lpc serial flash sst49lf016c 35 ?2008 silicon storage technology, inc. s71237-08-000 5/08 figure 19: 40-lead thin small outline package (tsop) 10mm x 20mm sst package code: ei 18.50 18.30 20.20 19.80 0.70 0.50 10.10 9.90 0.27 0.17 1.05 0.95 0.15 0.05 0.70 0.50 40-tsop-ei-7 note: 1. complies with jedec publication 95 mo-142 cd dimensions, although some dimensions may be more stringent. 2. all linear dimensions are in millimeters (max/min). 3. coplanarity: 0.1 mm 4. maximum allowable mold flash is 0.15 mm at the package ends, and 0.25 mm between leads. pin # 1 identifier 0.50 bsc 1.20 max. 0?- 5? detail 1mm
36 data sheet 16 mbit lpc serial flash sst49lf016c ?2008 silicon storage technology, inc. s71237-08-000 5/08 table 30: revision history revision description date 00 ? s71237(01): initial release of fact sheet (advance information) oct 2003 01 ? s71237(01): fact sheet changes ? 2004 flash data book nov 2003 02 ? s71237(01): fact sheet synchronized to and integrated into full data sheet ? s71237: initial release of data sheet (advance information) ? added auto-address increment (aai) mode apr 2004 03 ? added 32-tsop (wh/whe) package and associated mpns ? clarified supervoltage for aai mode ? clarified the solder temperature profile under ?absolute maximum stress ratings? on page 24 dec 2004 04 ? obsoleted stand-alone fact sheet s71237(01) ? changed to firmware protocol-only data sheet ? removed the ei package and related mpns ? added rohs compliance information on page 1 and in the ?product ordering infor- mation? on page 32 ? updated the surface mount lead temperature from 240c to 260c and the time from 3 seconds to 10 seconds on page 24. jul 2005 05 ? removed leaded part numbers jan 2006 06 ? cosmetic update to figure 3 feb 2006 07 ? revised product description. added 66 mhz information to features. added 66 mhz values to table 24, and table 26. added ?33 mhz and 66 mhz? to table title and removed f=33 mhz from table cells in table 20. sep 2006 08 ? added 40-lead tsop pin assignment and package drawing. updated product ordering information may 2008 silicon storage technology, inc. ? 1171 sonora court ? sunnyvale, ca 94086 ? telephone 408-735-9110 ? fax 408-735-9036 www.superflash.com or www.sst.com

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