unisonic technologies co., ltd ut6402 power mosfet www.unisonic.com.tw 1 of 6 copyright ? 2010 unisonic technologies co., ltd qw-r502-152.c n-channel enhancement mode ? description the ut6402 is n-channel enhancement mode power mosfet, designed with high density cell, with fast switching speed, low on-resistance, exce llent thermal and electrical capabilities, operation with low gate voltages. this device is suitable for use as a load switch or in pwm applications. ? symbol gate source drain sot-23 1 2 3 sot-26 1 2 3 4 5 6 ? ordering information ordering number pin assignment lead free plating halogen-free package 1 2 3 4 5 6 packing ut6402l-ae3-r ut6402g-ae3-r sot-23 s g d - - - tape reel ut6402l-ag6-r UT6402G-AG6-R sot-26 d d g s d d tape reel ? marking
ut6402 power mosfet unisonic technologies co., ltd 2 of 5 www.unisonic.com.tw qw-r502-152. c ? absolute maximum ratings (t a = 25 , unless otherwise specified) parameter symbol ratings unit drain-source voltage v dss 30 v gate-source voltage v gss 20 v continuous drain current (note 3) i d 6.9 a pulsed drain current (note 2) i dm 20 a power dissipation p d 2 w junction temperature t j +150 strong temperature t stg -55 ~ +150 note: absolute maximum ratings are those values beyond which the device could be permanently damaged. absolute maximum ratings are stress ratings only and functional device operation is not implied. ? thermal data parameter symbol min typ max unit junction to ambient (note 3) ja 74 110 /w ? electrical characteristics (t j =25c, unless otherwise specified) parameter symbol test conditions min typ max unit off characteristics drain-source breakdown voltage bv dss v gs =0 v, i d =250a 30 v drain-source leakage current i dss v ds =30v, v gs =0 v 1 a gate-source leakage current i gss v ds =0 v, v gs = 20v 100 na on characteristics gate threshold voltage v gs(th) v ds =v gs , i d =250 a 1 1.9 3 v on state drain current i d(on) v ds =5v, v gs =4.5v 20 a v gs =10v, i d =6.9a 22.5 28 m ? static drain-source on-resistance (note 2) r ds(on) v gs =4.5v, i d =5.0a 34.5 42 m ? dynamic characteristics input capacitance c iss 680 820 output capacitance c oss 102 reverse transfer capacitance c rss v ds =15 v, v gs =0v, f=1mhz 77 108 pf switching characteristics turn-on delay time (note 2) t d(on) 4.6 turn-on rise time t r 4.1 turn-off delay time t d(off) 20.6 turn-off fall-time t f v gs =10v,v ds =15v,r l =2.2 ? , r g =3 ? 5.2 ns total gate charge (note 2) q g 11.5 13.88 16.7 gate source charge q gs 1.82 gate drain charge q gd v ds =15v, v gs =10v, i d =6.9a 3.2 nc source- drain diode ratings and characteristics drain-source diode forward voltage v sd i s =1a 0.76 1 v maximum body-diode continuous current i s 3 a reverse recovery time t rr i f =6.9 a, di/dt=100a/ s 16.5 20 ns reverse recovery charge q rr i f =6.9 a, di/dt=100a/ s 7.8 nc notes: 1. pulse width limited by t j(max) 2. pulse width 300us, duty cycle 0.5%. 3. surface mounted on 1 in 2 copper pad of fr4 board.
ut6402 power mosfet unisonic technologies co., ltd 3 of 5 www.unisonic.com.tw qw-r502-152. c ? typical characteristics 25 125 v ds =5v 20 16 12 8 4 0 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 transfer characteristics gate to source voltage,v gs (v) drain current,i d (a) drain to source voltage,v ds (v) drain current,i d (a) on-region characteristics 6v 5v 4.5v 10v 4v 3.5v v gs =3v 30 25 20 15 10 5 0 012345 normalized on-resistance drain to source on- resistance,r ds(on) (m ) reverse drain current,i s (a) drain to source on- resistance,r ds(on) (m )
ut6402 power mosfet unisonic technologies co., ltd 4 of 5 www.unisonic.com.tw qw-r502-152. c ? typical characteristics(cont.) v ds =15v i d =6.9a capacitance characteristics c a p a c i t a n c e ( p f ) drain to source voltage,v ds (v) gate to source voltage,v gs (v) gate-charge characteristics gate charge,q g (nc) 10 8 6 4 2 0 02 4 6 810 12 14 f=1mh z v gs =0v c oss c rss c iss 0 5 10 15 20 25 30 0 100 200 300 400 1000 900 800 700 600 500 t j(max) =150 t a =25 40 30 20 10 0 0.001 0.01 0.1 1 10 100 1000 power (w) pulse width (s) single pulse power rating junction-to-ambient drain current,i d (a) drain to source voltage,v ds (v) 10 s 100 s 1ms 10ms 0.1s 1s 10s dc r ds(on) limited t j(max) =150 t a =25 100 10 1 0.1 0.1 1 10 100 maximum forward biased safe operating area 10 1 0.1 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 pulse width (s) normalized maximum transient thermal impedance normalized transient thermal resistance,z ja in descending order d=0.5,0.3,0.1,0.05,0.02,0.01,single pulse d=t on /t t j,pk =t a +p dm .z ja .r ja r ja =62.5 /w p dm t on t single pulse
ut6402 power mosfet unisonic technologies co., ltd 5 of 5 www.unisonic.com.tw qw-r502-152. c utc assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all utc products described or contained herein. utc products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. reproduction in whole or in part is prohibited without the prior writ ten consent of the copyright owner. the information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.
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