bcp 29, bcp 49 1 oct-20-1999 npn silicon darlington transistors ? for general af applications ? high collector current ? high current gain ? complementary types: bcp 28/48 (pnp) vps05163 1 2 3 4 eha00009 b(1) e(3) c(2,4) type marking pin configuration package bcp 29 bcp 49 bcp 29 bcp 49 1 = b 1 = b 2 = c 2 = c 3 = e 3 = e 4 = c 4 = c sot-223 sot-223 maximum ratings parameter symbol bcp 49 unit bcp 29 v ceo 30 60 v collector-emitter voltage 80 collector-base voltage 40 v cbo emitter-base voltage v ebo 10 10 i c 500 dc collector current ma peak collector current ma i cm 800 base current 100 i b 200 i bm peak base current total power dissipation , t s = 124 c p tot w 1.5 150 c junction temperature t j storage temperature t st g -65 ... 150 thermal resistance junction ambient 1) r thja k/w 75 junction - soldering point r thjs 17 1) package mounted on pcb 40mm x 40mm x 1.5mm / 6cm 2 cu
bcp 29, bcp 49 2 oct-20-1999 electrical characteristics at t a = 25c, unless otherwise specified. parameter symbol values unit min. typ. max. dc characteristics collector-emitter breakdown voltage i c = 1 ma, i b = 0 bcp 29 bcp 49 v (br)ceo 30 60 - - - - v collector-base breakdown voltage i c = 100 a, i b = 0 bcp 29 bcp 49 v (br)cbo 40 80 - - - - emitter-base breakdown voltage i e = 10 a, i c = 0 v (br)ebo 10 - - collector cutoff current v cb = 30 v, i e = 0 v cb = 60 v, i e = 0 bcp 29 bcp 49 i cbo - - - - 100 100 na collector cutoff current v cb = 30 v, i e = 0 , t a = 150 c v cb = 60 v, i e = 0 , t a = 150 c bcp 29 bcp 49 i cbo - - - - 10 10 a emitter cutoff current v eb = 5 v, i c = 0 i ebo - - 100 na dc current gain 1) i c = 100 a, v ce = 1 v bcp 29 bcp 49 h fe 4000 2000 - - - - - dc current gain 1) i c = 10 ma, v ce = 5 v bcp 29 bcp 49 h fe 10000 4000 - - - - - dc current gain 1) i c = 100 ma, v ce = 5 v bcp 29 bcp 49 h fe 20000 10000 - - - - dc current gain 1) i c = 500 ma, v ce = 5 v bcp 29 bcp 49 h fe 4000 2000 - - - - - 1) pulse test: t 300 s, d = 2%
bcp 29, bcp 49 3 oct-20-1999 electrical characteristics at t a = 25c, unless otherwise specified. parameter symbol values unit min. typ. max. dc characteristics collector-emitter saturation voltage1) i c = 100 ma, i b = 0.1 ma v cesat - - 1 v base-emitter saturation voltage 1) i c = 100 ma, i b = 0.1 ma v besat - - 1.5 ac characteristics mhz - - f t transition frequency i c = 50 ma, v ce = 5 v, f = 100 mhz 200 - collector-base capacitance v cb = 10 v, f = 1 mhz c cb pf - 6.5 1) pulse test: t 300 s, d = 2%
bcp 29, bcp 49 4 oct-20-1999 collector cutoff current i cbo = f ( t a ) v cb = v cemax 0 10 ehp00251 bcp 29/49 a t 150 0 4 10 cbo na 50 100 1 10 2 10 3 10 ?c max typ total power dissipation p tot = f ( t a *; t s ) * package mounted on epoxy 0 0.4 0 50 100 150 bcp 29/49 ehp00250 ? c 0.6 0.2 t a s t 0.8 1.0 1.2 1.4 w 1.6 p tot t t ; as transition frequency f t = f ( i c ) v ce = 5v 10 ehp00252 bcp 29/49 03 10 ma 1 10 3 10 5 10 1 10 2 10 2 c t f mhz permissible pulse load p totmax / p totdc = f ( t p ) 10 ehp00253 bcp 29/49 -6 0 10 5 d = 5 10 1 5 10 2 3 10 10 -5 10 -4 10 -3 10 -2 10 0 s 0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 tot max tot p dc p p t t p = d t t p t
bcp 29, bcp 49 5 oct-20-1999 dc current gain h fe = f ( i c ) v ce = 5v 10 ehp00255 bcp 29/49 -1 3 10 ma 3 10 6 10 5 5 10 0 10 1 10 4 c fe h 2 10 5 10 ? c 125 5 25 ? c -55 ? c collector-emitter saturation voltage i c = f (v cesat ), h fe = 1000 0 10 ehp00256 bcp 29/49 cesat v 1.5 0 3 10 c ma 0.5 1.0 1 10 2 10 ? c v 5 5 150 25 ? c -50 ? c collector-base capacitance c cb = f ( v cbo ) emitter-base capacitance c eb = f ( v ebo ) 10 ehp00257 bcp 29/49 -1 1 10 v 10 0 5 10 pf 0 eb0 vv cb0 cb0 c c eb0 () () eb0 c cb0 c base-emitter saturation voltage i c = f ( v besat ), h fe = 1000 0 10 ehp00258 bcp 29/49 besat v 3.0 0 3 10 c ma 1.0 2.0 1 10 2 10 ? c v 5 5 150 25 ? c -50 ? c
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