1.2v drive nch + nch mosfet VT6K1 ? structure ? dimensions (unit : mm) silicon n-channel mosfet ? features 1) low on-resistance. 2) small package(vmt6). 3) low voltage drive(1.2v drive). ? application switching ? packaging specifications ? inner circuit package taping code t2cr basic ordering unit (pieces) 8000 VT6K1 ? ? absolute maximum ratings (ta = 25 ? c) symbol limits unit drain-source voltage v dss 20 v gate-source voltage v gss ? 8v continuous i d ? 100 ma pulsed i dp ? 400 ma 0.15 w / total 0.12 w / element channel temperature tch 150 ? c range of storage temperature tstg ? 55 to ? 150 ? c *1 pw ? 10 ? s, duty cycle ? 1% *2 each terminal mounted on a recommended land. p d power dissipation type drain current parameter *2 *1 (1) tr1 source (2) tr1 gate (3) tr2 drain (4) tr2 source (5) tr2 gate (6) tr1 drain 1.2 0.5 0.130.16 0.8 0.1 0.4 0.4 (6) (5) (4) (1) (2) (3) 1.2 0.92 0.14 0.14 vmt6 abbreviated symbol : k01 ?2 ?2 ?1 ?1 (1) (2) (6) (5) (3) (4) ? 1 esd protection diode ? 2 body diode 1/5 2011.08 - rev.a data sheet www.rohm.com ? 2011 rohm co., ltd. all rights reserved.
VT6K1 ? electrical characteristics (ta = 25 ? c) symbol min. typ. max. unit gate-source leakage i gss -- ? 10 ? av gs = ? 8v, v ds =0v drain-source breakdown voltage v (br)dss 20 - - v i d =1ma, v gs =0v zero gate voltage drain current i dss --1 ? av ds =20v, v gs =0v gate threshold voltage v gs (th) 0.3 - 1.0 v v ds =10v, i d =100 ? a - 2.5 3.5 i d =100ma, v gs =4.5v - 3.0 4.2 i d =100ma, v gs =2.5v - 3.8 5.3 i d =50ma, v gs =1.8v - 4.5 9.0 i d =20ma, v gs =1.5v - 6.0 18.0 i d =10ma, v gs =1.2v forward transfer admittance l y fs l 180 - - ms v ds =10v, i d =100ma input capacitance c iss - 7.1 - pf v ds =10v output capacitance c oss - 3.3 - pf v gs =0v reverse transfer capacitance c rss - 1.7 - pf f=1mhz turn-on delay time t d(on) -5-nsv dd 10v, i d =50ma rise time t r -4-nsv gs =4.5v turn-off delay time t d(off) - 20 - ns r l =200 ? fall time t f - 38 - ns r g =10 ? *pulsed ? body diode characteristics (source-drain) symbol min. typ. max. unit forward voltage v sd - - 1.2 v i s =100ma, v gs =0v *pulsed conditions conditions parameter parameter static drain-source on-state resistance r ds (on) ? * * * * * * * * * * * 2/5 2011.08 - rev.a www.rohm.com ? 2011 rohm co., ltd. all rights reserved. data sheet
VT6K1 ? electrical characteristic curves 100 1000 10000 100000 0.0001 0.001 0.01 0.1 1 v gs = 1.5v pulsed t a = 125 c t a = 75 c t a = 25 c t a = - 25 c 0 0.02 0.04 0.06 0.08 0.1 0 0.2 0.4 0.6 0.8 1 v gs = 1.2v v gs = 4.5v v gs = 4.0v v gs = 2.5v v gs = 1.8v v gs = 1.5v t a =25 c pulsed 0.0001 0.001 0.01 0.1 1 0 0.5 1 1.5 2 v ds = 10v pulsed t a = 125 c t a = 75 c t a = 25 c t a = - 25 c 100 1000 10000 100000 0.0001 0.001 0.01 0.1 1 v gs = 1.2v v gs = 1.5v v gs = 1.8v v gs = 2.5v v gs = 4.5v . t a =25 c pulsed 0 0.02 0.04 0.06 0.08 0.1 0 2 4 6 8 10 v gs = 1.2v v gs = 4.5v v gs = 4.0v v gs = 2.5v v gs = 1.8v v gs = 1.5v t a =25 c pulsed 100 1000 10000 100000 0.0001 0.001 0.01 0.1 1 v gs = 2.5v pulsed t a = 125 c t a = 75 c t a = 25 c t a = - 25 c 100 1000 10000 100000 0.0001 0.001 0.01 0.1 1 v gs = 4.5v pulsed t a = 125 c t a = 75 c t a = 25 c t a = - 25 c 100 1000 10000 100000 0.0001 0.001 0.01 0.1 1 v gs = 1.8v pulsed t a = 125 c t a = 75 c t a = 25 c t a = - 25 c fig.1 typical output characteristics( ) fig.2 typical output characteristics( ) fig.3 typical transfer characteristics fig.4 static drain - source on - state resistance vs. drain current( ) fig.5 static drain - source on - state resistance vs. drain current( ) fig.6 static drain - source on - state resistance vs. drain current( ) fig.7 static drain - source on - state resistance vs. drain current( ) drain - source voltage : v ds [v] drain - source voltage : v ds [v] drain current : i d [a] gate - source voltage : v gs [v] drain - current : i d [a] static drain - source on - state resistance : r ds ( on ) [m ? ] drain - current : i d [a] static drain - source on - state resistance : r ds ( on ) [m ? ] drain - current : i d [a] static drain - source on - state resistance : r ds ( on ) [m ? ] drain - current : i d [a] static drain - source on - state resistance : r ds ( on ) [m ? ] fig.8 static drain - source on - state resistance vs. drain current( ) drain - current : i d [a] static drain - source on - state resistance : r ds ( on ) [m ? ] drain current : i d [a] drain current : i d [a] fig.9 static drain - source on - state resistance vs. drain current( ) drain - current : i d [a] static drain - source on - state resistance : r ds ( on ) [m ? ] 100 1000 10000 100000 0.0001 0.001 0.01 0.1 1 v gs = 1.2v pulsed t a = 125 c t a = 75 c t a = 25 c t a = - 25 c 3/5 2011.08 - rev.a www.rohm.com ? 2011 rohm co., ltd. all rights reserved. data sheet
VT6K1 0 2000 4000 6000 8000 10000 0 2 4 6 8 t a =25 pulsed i d = 0.1a i d = 0.01a 0.01 0.1 1 0 0.5 1 1.5 v gs =0v pulsed t a = 125 c t a = 75 c t a = 25 c t a = - 25 c 1 10 100 0.01 0.1 1 10 100 c iss c oss c rss t a =25 c f=1mhz v gs =0v 1 10 100 1000 0.01 0.1 1 t f t d(on) t d(off) t a =25 c v dd =10v v gs =4.5v r g =10 pulsed t r fig.11 reverse drain current vs. sourse - drain voltage fig.12 static drain - source on - state resistance vs. gate source voltage fig.14 typical capacitance vs. drain - source voltage fig.13 switching characteristics source current : i s [a] source - drain voltage : v sd [v] static drain - source on - state resistance : r ds ( on ) [m ? ] gate - source voltage : v gs [v] switching time : t [ns] drain - current : i d [a] drain - source voltage : v ds [v] capacitance : c [pf] 0.01 0.1 1 0.01 0.1 1 v ds = 10v pulsed t a = - 25 c t a =25 c t a =75 c t a =125 c fig.10 forward transfer admittance vs. drain current forward transfer admittance : |y fs | [s] drain - current : i d [a] 4/5 2011.08 - rev.a www.rohm.com ? 2011 rohm co., ltd. all rights reserved. data sheet
VT6K1 ? measurement circuits ? notice this product might cause chip aging and breakdown under the large electrified environment. please consider to design esd protection circuit. f ig.1-1 switching time measurement circu it v gs r g v ds d.u.t. i d r l v dd fig.1-2 switching waveforms 90% 90% 90 % 10% 10% 50% 10% 50% v gs pulse width v ds t on t off t r t d(on) t f t d(off) 5/5 2011.08 - rev.a www.rohm.com ? 2011 rohm co., ltd. all rights reserved. data sheet
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