1/5 STTH3006Tpi june 2003 - ed: 1a tandem 600v hyperfast rectifier ? the turboswitch ?h? is an ultra high performance diode composed of two 300v dice in series. turboswitch ?h? family drastically cuts losses in the associated mosfet when run at high di f /dt. description especially suited as boost diode in continuous mode power factor correctors and hard switching conditions designed for high di f /dt operation. hyperfast recovery current to compete with sic devices. allows downsizing of mosfet and heatsinks internal ceramic insulated devices with equal thermal conditions for both 300v diodes insulation (2500v rms ) allows placement on same heatsink as mosfet flexible heatsinking on common or separate heatsink. matched diodes for typical pfc application without need for voltage balance network package capacitance: c=16pf features and benefits symbol parameter value unit v rrm repetitive peak reverse voltage 600 v i f(rms) rms forward current 32 a i fsm surge non repetitive forward current tp = 10 ms sinusoidal 180 a t stg storage temperature range -65 +150 c tj maximum operating junction temperature + 150 c absolute ratings (limiting values, for both diodes) i f(av) 30 a v rrm 600 v (in series) tj (max) 150 c v f (max) 2.6 v i rm (typ.) 6.7 a major products characteristics 1 2 3 12 3 top-3 (insulated) tm: turboswitch is a trademark of stmicroelectronics
STTH3006Tpi 2/5 symbol parameter tests conditions min. typ. max. unit i r * reverse leakage current v r =v rrm tj = 25c 40 a tj = 125c 60 400 v f ** forward voltage drop i f =30a tj=25 c 3.6 v tj = 125c 2.1 2.6 pulse test : * tp = 100 ms, <2% ** tp = 380 s, <2% to evaluate the maximum conduction losses use the following equation : p=1.8xi f(av) + 0.026 i f 2 (rms) static electrical characteristics (for both diodes) symbol parameter test conditions value unit r th (j-c) junction to case thermal resistance total 1.3 c/w p conduction power dissipation for both diodes i f(av) =30a = 0.5 tc = 20c 100 w thermal and power data symbol parameter tests conditions min. typ. max. unit t rr reverse recovery time i f = 0.5 a irr = 0.25 a i r =1a tj = 25c 25 ns i f =1a di f /dt = - 50 a/s v r =30v 45 i rm reverse recovery current v r = 400 v i f =30a di f /dt = -200 a/s tj = 125c 6.7 8.5 a s reverse recovery softness factor 0.3 - dynamic characteristics (for both diodes) symbol parameter tests conditions min. typ. max. unit t fr forward recovery time i f =30a di f /dt = 100 a/s v fr = 1.1 x v f max tj = 25c 400 ns v fp transient peak forward recovery voltage i f =30a di f /dt = 100 a/s tj = 25c 6v turn-on switching characteristics (for both diodes)
STTH3006Tpi 3/5 p(w) 0 10 20 30 40 50 60 70 80 90 100 110 0 5 10 15 20 25 30 35 40 i(a) f(av) t =tp/t tp = 0.05 = 0.1 = 0.2 = 1 = 0.5 fig. 1: conduction losses versus average current. i(a) fm 0 20 40 60 80 100 120 140 160 180 200 012345678 v(v) fm t =25c (maximum values) j t =125c (maximum values) j t =125c (typical values) j fig. 2: forward voltage drop versus forward current. z/r th(j-c) th(j-c) 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.e-03 1.e-02 1.e-01 1.e+00 t =tp/t tp t(s) p = 0.5 = 0.2 = 0.1 single pulse fig. 3: relative variation of thermal impedance junction to case versus pulse duration. t (ns) rr 0 10 20 30 40 50 60 70 80 90 100 0 50 100 150 200 250 300 350 400 450 500 di /dt(a/s) f i =2 x i ff(av) i=i ff(av) i =0.5 x i ff(av) v =400v t =125c r j fig. 5: reverse recovery time versus d i f /dt (90% confidence). i (a) rm 0 2 4 6 8 10 12 14 16 18 0 50 100 150 200 250 300 350 400 450 500 di /dt(a/s) f v =400v t =125c r j i =2 x i ff(av) i=i ff(av) i =0.5 x i ff(av) i =0.25 x i ff(av) fig. 4: peak reverse recovery current versus d i f /dt (90% confidence). q (nc) rr 0 50 100 150 200 250 300 350 400 0 50 100 150 200 250 300 350 400 450 500 v =400v t =125c r j i =2 x i ff(av) i=i f f(av) i =0.5 x i f f(av) di /dt(a/s) f fig. 6: reverse recovery charges versus di f /dt (90% confidence).
STTH3006Tpi 4/5 0.00 0.25 0.50 0.75 1.00 1.25 1.50 1.75 2.00 2.25 2.50 2.75 3.00 25 50 75 100 125 t (c) j i=i reference: t =125c ff(av) j v =400v r i rm s fig. 8: relative variation of dynamic parameters versus junction temperature (reference: tj = 125c). v (v) fp 0 2 4 6 8 10 12 14 0 50 100 150 200 250 300 350 400 450 500 i=i t =125c ff(av) j di /dt(a/s) f fig. 9: transient peak forward voltage versus d i f /dt (90% confidence). t (ns) fr 0 100 200 300 400 500 600 700 800 0 100 200 300 400 500 di /dt(a/s) f i=i t =125c ff(av) j v =1.1 x v max. fr f fig. 10: forward recovery time versus d i f /dt (90% confidence). s 0.20 0.25 0.30 0.35 0.40 0 50 100 150 200 250 300 350 400 450 500 di /dt(a/s) f i=i t =125c f f(av) j v =400v r fig. 7: reverse recovery softness factor versus d i f /dt (typical values). c(pf) 10 100 1000 1 10 100 1000 f=1mhz v =30mv t =25c osc rms j v(v) r fig. 11: junction capacitance versus reverse voltage applied (typical values).
STTH3006Tpi 5/5 ordering code marking package weight base qty delivery mode STTH3006Tpi STTH3006Tpi top-3 ins. 4.5 g. 30 tube cooling method: c recommended torque value: 0.8 n.m. maximum torque value: 1 n.m. epoxy meets ul94,v0 information furnished is believed to be accurate and reliable. however, stmicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. no license is granted by implication or otherwise under any patent or patent rights of stmicroelectronics. specifications mentioned in this publication are subject to change without notice. this publication supersedes and replaces all information previously supplied. stmicroelectronics products are not authorized for use as critical components in life support devices or systems without express written ap - proval of stmicroelectronics. the st logo is a registered trademark of stmicroelectronics ? 2003 stmicroelectronics - printed in italy - all rights reserved. stmicroelectronics group of companies australia - brazil - canada - china - finland - france - germany hong kong - india - israel - italy - japan - malaysia - malta - morocco - singapore spain - sweden - switzerland - united kingdom - united states. http://www.st.com package mechanical data top-3 insulated ref. dimensions millimeters inches min. typ. max. min. typ. max. a 4.4 4.6 0.173 0.181 b 1.45 1.55 0.057 0.061 c 14.35 15.60 0.565 0.614 d 0.5 0.7 0.020 0.028 e 2.7 2.9 0.106 0.114 f 15.8 16.5 0.622 0.650 g 20.4 21.1 0.815 0.831 h 15.1 15.5 0.594 0.610 j 5.4 5.65 0.213 0.222 k 3.4 3.65 0.134 0.144 l 4.08 4.17 0.161 0.164
|
