b-38 01/99 IF4510 n-channel silicon junction field-effect transistor low-noise, high gain amplifier absolute maximum ratings at t a = 25?c reverse gate source & reverse gate drain voltage C 20 v continuous forward gate current 10 ma continuous device power dissipation 300 mw power derating 1.8 mw/c storage temperature range C 65c to 200c toe236ab package dimensions in inches (mm) pin configuration 1 drain, 2 source, 3 gate at 25c free air temperature: IF4510 process nj450h static electrical characteristics min max unit test conditions gate source breakdown voltage v (br)gss C 20 v i g = C 1 a, v ds = ?v gate reverse current i gss C 0.1 na v gs = C 15 v, v ds = ?v gate source cutoff voltage v gs(off) C 0.35 C 1.5 v v ds = 15 v, i d = 0.5 na drain saturation current (pulsed) i dss 5mav ds = 15 v, v gs = ?v dynamic electrical characteristics common source g fs 15 ms v ds = 15 v, i d = 5 ma f = 1 khz forward transconductance common source input capacitance c iss 35 pf v ds = 15 v, v gs = ? v f = 1 mhz common source c rss 8pfv ds = 15 v, v gs = ? v f = 1 mhz reverse transfer capacitance typ equivalent short circuit e n 1.5 nv/ hz v dg = 12 v, v gs = ?v f = 1 khz input noise voltage 1000 n. shiloh road, garland, tx 75042 (972) 487-1287 fax (972) 276-3375 www.interfet.com databook.fxp 1/14/99 1:51 pm page b-38
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