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| savantic semiconductor product specification silicon npn power transistors MJE3055T description with to-220 package complement to type mje2955t dc current gain -h fe = 20?70 @ i c = 4 adc collector?emitter saturation voltage - v ce(sat) = 1.1 vdc (max) @ i c = 4 adc applications designed for general?purpose switching and amplifier applications. pinning pin description 1 base 2 collector 3 emitter absolute maximum ratings(t c =25) symbol parameter conditions value unit v cbo collector-base voltage open emitter 70 v v ceo collector-emitter voltage open base 60 v v ebo emitter-base voltage open collector 5 v i c collector current 10 a i b base current 6 a p c collector power dissipation t c =25 75 w t j junction temperature 150 t stg storage temperature -55~150 thermal characteristics symbol parameter value unit r th j-c thermal resistance junction to case 1.67 /w
savantic semiconductor product specification 2 silicon npn power transistors MJE3055T characteristics tj=25 unless otherwise specified symbol parameter conditions min typ. max unit v ceo(sus) collector-emitter sustaining voltage i c =0.2a ;i b =0 60 v v ce ( sat) -1 collector-emitter saturation voltage i c =4a ;i b =0.4a 1.1 v v ce (sat) -2 collector-emitter saturation voltage i c =10a ;i b =3.3a 8.0 v v be base-emitter on voltage i c =4a ; v ce =4v 1.8 v i ceo collector cut-off current v ce =30v; i b =0 0.7 ma i cex collector cut-off current v ce =70v; v be(off) =1.5v t c =150 1.0 5.0 ma i cbo collector cut-off current v cb =70v; i e =0 t c =150 1.0 10 ma i ebo emitter cut-off current v eb =5v; i c =0 5.0 ma h fe-1 dc current gain i c =4a ; v ce =4v 20 100 h fe-2 dc current gain i c =10a ; v ce =4v 5.0 f t transition frequency i c =0.5a ; v ce =10v 2.0 mhz savantic semiconductor product specification 3 silicon npn power transistors MJE3055T package outline fig.2 outline dimensions (unindicated tolerance: 0.10mm) savantic semiconductor product specification 4 silicon npn power transistors MJE3055T |
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