schottky barrier diode RBQ10NS65A l applications l dimensions (unit : mm) l land size figure (unit : mm) general rectification l general rectification 1)cathode common dual type. lpds 2)low i r. l construction l structure silicon epitaxial planer l taping dimensions unit : mm absolute maximum ratings (tc=25 c) symbol unit v rm v v r v io a i fsm a tj c tstg c l electrical characteristics (tj=25c) symbol min. typ. max. unit conditions forward voltage v f - - 0.69 v i f =5a reverse current i r - - 0.15 ma v r =65v average rectified forward current (*1) 10 50 150 limits 65 65 parameter reverse voltage (repetitive) reverse voltage (dc) forward current surge peak (60hz ? 1cyc)(*2) junction temperature storage temperature - 40 to + 150 (*2) 60hz half sin wave, one cycle, non-repetitive at tj=25 c. (*1) 60hz half sin wave, 1/2 io per diode. parameter bq10ns 65a rohm : lpds jeita : to263s manufacture year, week and day 1/4 2011.11 - rev.a data sheet www.rohm.com ? 2011 rohm co., ltd. all rights reserved.
RBQ10NS65A 1 10 100 1000 0 5 10 15 20 25 30 0.01 0.1 1 10 0 100 200 300 400 500 600 700 800 forward voltage v f (mv) v f - i f characteristics forward current:i f (a) ta=125 c ta=25 c ta=150 c ta= - 25 c ta=75 c 0.01 0.1 1 10 100 1000 10000 100000 0 5 10 15 20 25 30 35 40 45 50 55 60 65 70 600 610 620 630 640 650 660 670 680 690 700 0 10 20 30 40 50 350 360 370 380 390 400 410 420 430 440 450 ave:396pf ta=25 c f=1mhz v r =0v n=10pcs reverse current:i r ( m a) ta= - 25 c ta=75 c ta=150 c ta=125 c ta=25 c reverse voltage v r (v) v r - i r characteristics capacitance between terminals:ct(pf) reverse voltage:v r (v) v r - ct characteristics f=1mhz v f dispersion map forward voltage:v f (mv) ave:629.2mv ta=25 c i f =5a n=30pcs reverse current:i r ( m a) i r dispersion map ta=25 c v r =65v n=30pcs ave:12.36 m a capacitance between terminals:ct(pf) ct dispersion map 2/4 2011.11 - rev.a www.rohm.com ? 2011 rohm co., ltd. all rights reserved. data sheet
RBQ10NS65A 0 50 100 150 200 250 300 8.3ms i fsm 1cyc ave:129.0a 0 5 10 15 20 25 30 ave:7.5ns ta=25 c i f =0.5a i r =1a irr=0.25*i r n=10pcs 0 50 100 150 200 250 300 1 10 100 0 50 100 150 200 250 300 1 10 100 t i fsm 0.001 0.01 0.1 1 10 100 1000 0.001 0.01 0.1 1 10 100 1000 rth(j - a) rth(j - c) 0 5 10 15 0 5 10 15 20 dc d=1/2 sin( q 180) 8.3ms i fsm 1cyc 8.3ms i fsm disresion map peak surge forward current:i fsm (a) trr dispersion map reverse recovery time:trr(ns) peak surge forward current:i fsm (a) number of cycles i fsm - cycle characteristics peak surge forward current:i fsm (a) time:t(ms) i fsm - t characteristics time:t(s) rth - t characteristics transient thermal impedance:rth ( c /w) forward power dissipation:pf(w) average rectified forward current io(a) io - pf characteristics 3/4 2011.11 - rev.a www.rohm.com ? 2011 rohm co., ltd. all rights reserved. data sheet
RBQ10NS65A 0 0.5 1 1.5 2 0 10 20 30 40 50 60 70 sin( q 180) dc d=1/2 0 5 10 15 20 25 30 0 25 50 75 100 125 150 sin( q 180) dc d=1/2 0 5 10 15 20 25 30 0 25 50 75 100 125 150 sin( q 180) dc d=1/2 0 5 10 15 20 25 30 ave:2.9kv c=100pf r=1.5k w c=200pf r=0 w ave:12.6kv v r io t tj=150 c d=t/t t v r =30v 0a 0v v r io t tj=150 c d=t/t v r =30v 0a 0v t reverse power dissipation:p r (w) reverse voltage:v r (v) v r - p r characteristics ambient temperature:ta( c ) derating curve (io - ta) average rectified forward current:io(a) average rectified forward current:io(a) case temperature:tc( c ) derating curve(io - tc) electrostatic discharge test esd(kv) esd dispersion map 4/4 2011.11 - rev.a www.rohm.com ? 2011 rohm co., ltd. all rights reserved. data sheet
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