schottky barrier diode RBQ10T45A l applications l dimensions (unit : mm) l structure general rectification l features 1)cathode common type. 2)low i r 3)high reliability l construction silicon epitaxial planer l absolute maximum ratings (tc=25 ? c) symbol unit v rm v v r v io a i fsm a tj ? c tstg ? c l electrical characteristics (tj=25 ? c) symbol min. typ. max. unit forward voltage v f - - 0.65 v i f =5a reverse current i r - - 150 m a v r =45v (*1) rating of per diode : io/2 parameter conditions junction temperature 150 storage temperature - 40 to + 150 forward current surge peak (60hz ? 1cyc) 50 reverse voltage (repetitive) 45 reverse voltage (dc) 45 parameter limits average rectified forward current (*1) 10 rohm : to220fn manufacture date 1/4 2011.11 - rev.a data sheet www.rohm.com ? 2011 rohm co., ltd. all rights reserved. 1.2 1.3 0.8 (1) (2) (3) >y>>>?<>>>? fff>>>>y >>>?<>>>t >?>>?<>>>t >y>t>>?<>>>t >t>>??<>>>t fff>>>>y >>>?<>>>? fff>>>>y >>>??<>>>y 0.05 >t>>a?<>>> 13.5min 8.0 >y>>>?<>>> >>>>>f>>>>t
RBQ10T45A 0.01 0.1 1 10 0 100 200 300 400 500 600 700 800 ta=25 c ta=125 c ta= - 25 c ta=75 c ta=150 c forward voltage v f (mv) v f - i f characteristics forward current:i f (a) 0.01 0.1 1 10 100 1000 10000 100000 0 10 20 30 40 50 ta= - 25 c ta=25 c ta=75 c ta=125 c ta=150 c reverse current:i r (a) reverse voltage v r (v) v r - i r characteristics 1 10 100 1000 0 5 10 15 20 25 30 f=1mhz reverse voltage:v r (v) v r - ct characteristics capacitance between terminals:ct(pf) 500 510 520 530 540 550 560 570 580 590 600 v f dispersion map forward voltage:v f (mv) ave:551.3mv ta=25 c i f =5a n=30pcs 0 5 10 15 20 25 30 reverse current:i r ( m a) i r dispersion map ta=25 c v r =45v n=30pcs ave:12.2 m a 450 460 470 480 490 500 510 520 530 540 550 ave:489.8pf ta=25 c f=1mhz v r =0v n=10pcsa ct di s persion map capacitance between terminals:ct(pf) 2/4 2011.11 - rev.a www.rohm.com ? 2011 rohm co., ltd. all rights reserved. data sheet
RBQ10T45A 0 50 100 150 200 250 300 1 10 100 peak surge forward current:i fsm (a) number of cycles i fsm - cycle characteristics 8.3ms i fsm 1cyc 8.3ms 0.01 0.1 1 10 100 1000 0.001 0.01 0.1 1 10 100 1000 rth(j - a) rth(j - c) 0 100 200 300 8.3ms 1cyc i fsm i fsm disresion map peak surge forward current:i fsm (a) ave:128.5a 0 5 10 15 20 25 30 ave:10.8ns ta=25 c i f =0.5a i r =1a irr=0.25*i r n=10pcs trr dispersion map reverse recovery time:trr(ns) time:t(s) rth - t characteristics transient thermal impedance:rth ( c /w) 0 50 100 150 200 250 300 1 10 100 t i fsm peak surge forward current:i fsm (a) time:t(ms) i fsm - t characteristics 0 2 4 6 8 10 0 5 10 15 20 average rectified forward current io(a) io - pf characteristics forward power dissipation:pf(w) dc d=1/2 sin( q 180) 3/4 2011.11 - rev.a www.rohm.com ? 2011 rohm co., ltd. all rights reserved. data sheet
RBQ10T45A 0 0.5 1 1.5 2 0 10 20 30 40 50 reverse power dissipation:p r (w) reverse voltage:v r (v) v r - p r characteristics sin( q = 180) dc d=1/2 0 5 10 15 20 25 30 0 25 50 75 100 125 150 sin( q 180) dc d=1/2 ambient temperature:ta( c ) derating curve(io - ta) average rectified forward current:io(a) v r io tj=150 c d=t/t t v r =20v 0a 0v 0 5 10 15 20 25 30 0 25 50 75 100 125 150 average rectified forward current:io(a) case temperature:tc( ) derating durve(io - tc) sin( q 180) dc d=1/2 v r io t tj=150 c d=t/t v r =20v 0a 0v t 0 5 10 15 20 25 30 ave:4.9kv c=100pf r=1.5k w c=200pf r=0 w ave:23.3kv electrostatic discharge test esd(kv) esd dispersion map t 4/4 2011.11 - rev.a www.rohm.com ? 2011 rohm co., ltd. all rights reserved. data sheet
r 1 120 a ww w .rohm.com ? 20 1 1 rohm co., ltd. all rights reserved. notice rohm customer support system http://ww w . r ohm.com/contact/ thank you for your accessing to rohm p r oduct informations. mo r e detail p r oduct informations and catalogs a r e available, please contact us. notes
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