unisonic technologies co., ltd um6k31n preliminary power mosfet www.unisonic.com.tw 1 of 5 copyright ? 2010 unisonic technologies co., ltd qw-r502-503.a silicon n-channel mosfet transistor ? description the utc um6k31n is a silicon n-channel mos field effect transistor. it can be used in switching applications. ? symbol sot-363 1 2 3 4 5 6 ? ordering information ordering number pin assignment lead free halogen free package 1 2 3 4 5 6 packing UM6K31NL-AL6-R um6k31ng-al6-r sot-363 s1 g1 d2 s2 g2 d1 tape reel note: pin assignment: g: gate d: drain s: source ? marking
um6k31n preliminary power mosfet unisonic technologies co., ltd 2 of 3 www.unisonic.com.tw qw-r502-503.a ? absolute maximum ratings (ta=25c, it is the same rating for the tr1 and tr2) parameter symbol ratings unit drain-source voltage v dss 60 v gate-source voltage v gss 20 v continuous i d 250 ma drain current continuous pulsed (note1) i dp 1 a continuous i s 125 ma source current continuous (body diode) pulsed (note1) i sp 1 a power dissipation p d 150 mw channel temperature t ch 150 c strage temperature t stg -55~150 c note: absolute maximum ratings are those values be yond which the device could be permanently damaged. absolute maximum ratings are stress ratings only and functional device oper ation is not implied. ? thermal resistance parameter symbol ratings unit channel to ambient ja 833 c/w ? electrical characteristics (ta =25c, it is the same rating for the tr1 and tr2) parameter symbol test conditions min typ max unit off characteristics drain-source breakdown voltage bv dss i d =1ma, v gs =0v 60 v drain-source leakage current i dss v ds =60v, v gs =0v 1 a gate- source leakage current i gss v gs = 20 v, v ds =0 v 10 a on characteristics gate threshold voltage v gs(th) v ds =10v, i d =1ma 1.0 2.5 v v gs =10v, i d =250ma 1.7 2.4 v gs =4.5v, i d =250ma 2.1 3.0 v gs =4.0v, i d =250ma 2.3 3.2 static drain-source on-state resistance r ds(on) (note1) v gs =2.5v, i d =10ma 3.0 12.0 ? dynamic parameters input capacitance c iss 15 pf output capacitance c oss 4.5 pf reverse transfer capacitance c rss v gs =0v, v ds =25v, f=1mhz 2.0 pf switching parameters turn-on delay time t d(on) (note1) 3.5 ns rise time t r (note1) 5 ns turn-off delay time t d(off) (note1) 18 ns fall-time t f (note1) i d =100ma, v dd 30v, v gs =10v, r l 300 ? , r g =10 ? see fig 1-1.1-2 28 ns source- drain diode ratings and characteristics drain-source diode forward voltage v sd (note1) i s =250ma, v gs =0v 1.2 v forward transfer admittance |y fs | (note1) v ds =10v, i d =250ma 0.25 s note1: pw 10 s duty cycle 1%
um6k31n preliminary power mosfet unisonic technologies co., ltd 3 of 3 www.unisonic.com.tw qw-r502-503.a ? test circuit utc assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all utc products described or contained herein. utc products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. reproduction in whole or in part is prohibited without the prior writ ten consent of the copyright owner. the information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.
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