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| inchange semiconductor isc product specification isc silicon npn darlington power transistor BDW39 description collector-emitter sustaining voltage- : v ceo(sus) = 45v(min) high dc current gain : h fe = 1000(min) @i c = 5a low collector saturation voltage : v ce(sat) = 2.0v(max.)@ i c = 5.0a = 3.0v(max.)@ i c = 10a complement to type bdw44 applications designed for general purpose and low speed switching applications absolute maximum ratings(t a =25 ) symbol parameter value unit v cbo collector-base voltage 45 v v ceo collector-emitter voltage 45 v v ebo emitter-base voltage 5 v i c collector current-continuous 15 a i b b base current-continuous 0.5 a p c collector power dissipation @ t c =25 85 w t j junction temperature 150 t stg storage temperature range -55~150 thermal characteristics symbol parameter max unit r th j-c thermal resistance,junction to case 1.47 /w isc website www.iscsemi.cn
inchange semiconductor isc product specification isc silicon npn darlington power transistor BDW39 electrical characteristics t c =25 unless otherwise specified symbol parameter conditions min typ. max unit v ceo(sus) collector-emitter sustaining voltage i c = 30ma; i b = 0 45 v v ce( sat )-1 collector-emitter saturation voltage i c = 5a; i b = 10ma b 2.0 v v ce( sat )-2 collector-emitter saturation voltage i c = 10a; i b = 50ma 3.0 v v be( on ) base-emitter on voltage i c = 10a; v ce = 4v 3.0 v i cbo collector cutoff current v cb = 45v; i e = 0 1.0 ma i ceo collector cutoff current v ce = 22.5v; i b = 0 b 2.0 ma i ebo emitter cutoff current v eb = 5v; i c = 0 2.0 ma h fe-1 dc current gain i c = 5a; v ce = 4v 1000 h fe-2 dc current gain i c = 10a; v ce = 4v 250 f t current-gain?bandwidth product i c = 3a; v ce = 3v; f test = 1mhz 4 mhz c ob output capacitance i e = 0; v cb = 10v; f test = 0.1mhz 200 pf isc website www.iscsemi.cn 2 |
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