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| savantic semiconductor product specification silicon pnp power transistors 2SB1193 d escription with to-220fa package high dc current gain high speed switching darlington complement to type 2sd1773 applications for medium speed switching applications pinning pin description 1 base 2 collector 3 emitter absolute maximum ratings(ta=25 ) symbol parameter conditions value unit v cbo collector-base voltage open emitter -120 v v ceo collector -emitter voltage open base -120 v v ebo emitter-base voltage open collector -7 v i c collector current -8 a i cm collector current-peak -12 a t a =25 2 p c collector power dissipation t c =25 50 w t j junction temperature 150 t stg storage temperature -55~150 fig.1 simplified outline (to-220fa) and symbol
savantic semiconductor product specification 2 silicon pnp power transistors 2SB1193 c haracteristics tj=25 unless otherwise specified symbol parameter conditions min typ. max unit v ceo(sus) collector-emitter sustaining voltage i c =-2a; r be = < ;l=10mh -120 v v (br)ebo emitter-base breakdown voltage i e =-50ma; i c =0 -7 v v cesat-1 collector-emitter saturation voltage i c =-4a ;i b =-8ma -1.5 v v cesat-2 collector-emitter saturation voltage i c =-8a ;i b =-80ma -3.0 v v besat-1 base-emitter saturation voltage i c =-4a ;i b =-8ma -2.0 v v besat-2 base-emitter saturation voltage i c =-8a ;i b =-80ma -3.5 v i cbo collector cut-off current v cb =-120v; i e =0 -100 a i ceo collector cut-off current v ce =-100v; r be = < -10 a h fe dc current gain i c =-4a ; v ce =-3v 1000 20000 switching times t on turn-on time 0.7 s t stg storage time 3.5 s t f fall time i c =-4a ;i b1 =-i b2 =-8ma v cc =-50v 2.0 s savantic semiconductor product specification 3 silicon pnp power transistors 2SB1193 package outline fig.2 outline dimensions (unindicated tolerance: 0.15 mm) |
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