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| 1/15 www.rohm.com 2011.01 - rev. a ? 2011 rohm co., ltd. all rights reserved. high performance regulators for pcs nch fet ultra ldo for desktop pcs bd35281hfn description the bd35281hfn ultra low-dropout linear regulator operates from a very low input supply, and offers ideal performance in low input voltage to low output voltage applications. it incor porates a built-in n-mosfet power transistor to minimize the input-to-output voltage differential to the on resistance (r on max =150m ) level. by lowering the dropout voltage in this way, the regulator realizes high current output (iomax=1.5a) with reduced conversion lo ss, and thereby obviates the switching regulator and its power transistor, choke coil, and rectifier diode. thus, the bd35281hfn designed to enable significant package profile downsizing and cost reduction. in bd35281hfn , the nrcs (soft start) function enables a controlled output voltage ramp-up, which can be programmed to whatever power supply sequence is required. features 1) internal high-precision reference voltage circuit (0.65v 1%) 2) internal high-precision output voltage circuit 3) built-in v cc undervoltage lockout circuit (v cc =3.80v) 4) nrcs (soft start) function reduces the magnitude of in-rush current 5) internal nch mosfet driver offers low on resistance (100m typ) 6) built-in short circuit protection (scp) 7) built-in current limit circuit (1.5a min) 8) built-in thermal shutdown (tsd) circuit 9) small package hson8 : 2.9mm 3.0mm 0.6mm 10) tracking function applications notebook computers, desktop computer s, lcd-tv, dvd, digital appliances absolute maximum ratings (ta=25 ) parameter symbol ratings unit input voltage 1 v cc +6.0 * 1 v input voltage 2 v in +6.0 * 1 v maximum output current i o 2* 1 a enable input voltage v en -0.3 +6.0 v power dissipation 1 pd1 0.63 *2 w power dissipation 2 pd2 1.35 *3 w power dissipation 3 pd3 1.75 *4 w operating temperature range topr -10 +100 storage temperature range tstg -55 +125 maximum junction temperature tjmax +150 *1 should not exceed pd. *2 reduced by 5.04mw/ for each increase in ta R 25 (when mounted on a 70mm 70mm 1.6mm glass-epoxy board, 1-layer, copper foil area : less than 0.2%) *3 reduced by 10.8mw/ for each increase in ta R 25 (when mounted on a 70mm 70mm 1.6mm glass-epoxy board, 1-layer, copper foil area : less than 7.0%) *4 reduced by 14.0mw/ for each increase in ta R 25 (when mounted on a 70mm 70mm 1.6mm glass-epoxy board, 1-layer, copper foil area : less than 65.0%) no.11030eat38
technical note 2/15 www.rohm.com 2011.01 - rev. a ? 2011 rohm co., ltd. all rights reserved. bd35281hfn operating voltage (ta=25 ) parameter symbol ratings unit min. max. input voltage 1 v cc 4.3 5.5 v input voltage 2 v in 1.5 v cc -1 * 5 v output voltage setting range i o 1.2 (fixed) v enable input voltage v en -0.3 5.5 v nrcs capacity cnrcs 0.001 1 f *5 v cc and v in do not have to be implemented in the order listed. this product is not designed for use in radioactive environments. electrical characteristics (unless otherwise specified, ta=25 , v cc =5v, v en =3v, v in =1.7v) parameter symbol limits unit condition min. typ. max. bias current i cc - 0.7 1.2 ma v cc shutdown mode current i st - 0 10 a v en =0v output voltage i o 1.5 - - a feedback voltage 1 v os 1 1.188 1.200 1.212 v feedback voltage 2 v os 2 1.176 1.200 1.224 v tj=-10 to 100 line regulation 1 reg.l1 - 0.1 0.5 %/v v cc =4.3v to 5.5v line regulation 2 reg.l2 - 0.1 0.5 %/v v in =1.5v to 3.3v load regulation reg.l - 0.5 10 mv i o =0 to 1.5a output on resistance r on - 100 150 m i o =1.5a,v in =1.2v, tj=-10 to 100 standby discharge current i den 1 - - ma v en =0v, v o =1v [enable] enable pin input voltage high en high 2 - - v enable pin input voltage low en low 0 - 0.8 v enable input bias current i en - 7 10 a v en =3v [nrcs] nrcs charge current i nrcs 12 20 28 a nrcs standby voltage v stb - 0 50 mv v en =0v [uvlo] v cc undervoltage lockout threshold voltage v cc uvlo 3.5 3.8 4.1 v v cc :sweep-up v cc undervoltage lockout hysteresis voltage v cc hys 100 160 220 mv v cc :sweep-down v in undervoltage lockout threshold voltage v in uvlo 0.72 0.84 0.96 v v in :sweep-up [scp] scp start up voltage v oscp v o 0.3 v o 0.4 v o 0.5 v scp threshold voltage t scp 45 90 200 sec technical note 3/15 www.rohm.com 2011.01 - rev. a ? 2011 rohm co., ltd. all rights reserved. bd35281hfn reference data t(200sec/div) ven vnrcs vo v in v cc ven v cc ven v in vo ven v cc v in v cc ven v in vo v cc ven v in vo vcc ven vin t(10sec/div) 2a 108mv 1a/di v io vo 50mv/di v t(100sec/div) 98mv 2a 1a/di v io vo 50mv/di v 1a/di v io vo 50mv/di v t(10sec/div) 66mv 2a 2a 51mv t(100sec/div) 1a/di v io vo 50mv/di v t(200sec/div) ven vnrcs vo t(10sec/div) 91mv 2a 2a/di v io vo 50mv/di v t(100sec/div) 80mv 2a 1a/di v io vo 50mv/di v fig.2 transient response (0a 1.5a) co=47f cfb=1000pf fig.3 transient response (0a 1.5a) co=22f cfb=1000pf fig.4 transient response (1.5a 0a) co=100f cfb=1000pf fig.5 transient response (1.5a 0a) co=47f cfb=1000pf fig.6 transient response (1.5a 0a) co=22f cfb=1000pf fig.1 transient response (0a 1.5a) co=100f cfb=1000pf fig.7 waveform at output start fig.8 waveform at output off fig.9 input sequence fig.10 input sequence fig.11 input sequence fig.12 input sequence v cc ven v in vo v cc v in ven technical note 4/15 www.rohm.com 2011.01 - rev. a ? 2011 rohm co., ltd. all rights reserved. bd35281hfn ven v in v cc v cc ven v in vo 75 85 95 105 115 125 135 34 56 78 vcc [v] ron [mo] vo=1.0v vo=2.5v vo=1.8v vo=1.5v vo=1.2v 1.15 1.17 1.19 1.21 1.23 1.25 -50 -25 0 25 50 75 100 125 150 tj [ ] vo [v] 0.4 0.5 0.6 0.7 0.8 0.9 -50 - 25 0 25 50 75 100 125 150 tj [ ] icc [ma] 1.0 1.2 1.4 1.6 1.8 2.0 -50 -25 0 25 50 75 100 125 150 tj [ ] iin [ma] 0.0 0.5 1.0 1.5 2.0 2.5 3.0 -50 -25 0 25 50 75 100 125 150 tj [ ] istb [a] 0 5 10 15 20 25 30 -50 -25 0 25 50 75 100 125 150 tj [ ] iinstb [ a] 10 11 12 13 14 15 16 17 18 19 20 -50 - 25 0 25 50 75 100 125 150 tj [ ] inrcs [a] 50 70 90 110 130 150 - 50 - 25 0 25 50 75 100 125 150 tj [ ] ron [mo] reference data v in ven v cc v cc ven v in vo 0 1 2 3 4 5 6 7 8 9 10 -50 -25 0 25 50 75 100 125 150 tj [ ] ien [a] fig.13 input sequence fig.14 input sequence fig.15 tj-vo (io=0ma) fig.16 tj-icc fig.17 tj-iin fig.18 tj-iccstb fig.19 tj-iinstb fig.20 tj-nrcs fig.21 tj-ien fig.22 tj-r on (vcc=5v/vo=1.2v) fig.23 vcc- r on technical note 5/15 www.rohm.com 2011.01 - rev. a ? 2011 rohm co., ltd. all rights reserved. bd35281hfn block diagram pin layout pin function pin no. pin name pin function 1 v cc power supply pin 2 en enable input pin 3 nrcs in-rush current protection (nrcs) capacitor connection pin 4 v in input voltage pin 5 v o output voltage pin 6 v os output voltage control pin 7 fb reference voltage feedback pin 8 gnd ground pin - fin connected to heatsink and gnd reference block vin uvlolatch current limit en v cc v cc v cc vcc en uvlo1 uvlo2 vref1 gnd cl uvlo1 uvlo2 tsd scp en uvlo1 cl v cc vref2 v in v o fb v in v o v os nrcs 1 2 3 8 5 4 nrcs tsd nrcs0.3. vref1 0.4 fb scp/tsd latch latch en uvlo1 en/uvlo nrcs c1 c2 7 c nrcs c3 c fb 6 r2 r1 r2 r1 gnd fb 6 fin v os 5 6 7 8 v o vcc en nrcs v in 4 3 2 1 technical note 6/15 www.rohm.com 2011.01 - rev. a ? 2011 rohm co., ltd. all rights reserved. bd35281hfn operation of each block ? amp this is an error amp that compares the reference voltage (0.65v) with v o to drive the output nch fet (ron=150m ). frequency optimization helps to realize rapid transient res ponse, and to support the use of ceramic capacitors on the output capacitors. amp input voltage ranges from gnd to 2.7v, while the amp output ranges from gnd to v cc . when en is off, or when uvlo is active, output goes low and the output of the nchfet switches off. ? en the en block controls the regulator?s on /off state via the en logic input pin. in the off position, circuit voltage is maintained at 0a, thus minimizing current consumption at st andby. the fet is switched on to enable discharge of the nrcs pin v o , thereby draining the excess charge and preventing t he ic on the load side from malfunctioning. since no electrical connection is required (e.g. between the v cc pin and the esd prevention diode), module operation is independent of the input sequence. ? v cc uvlo to prevent malfunctions that can o ccur during a momentary decrease in v cc , the uvlo circuit switches the output off, and (like the en block) discharges nrcs and v o . once the uvlo threshold voltage (t yp3.80v) is reached, the power-on reset is triggered and output continues. ? v in uvlo when v d voltage exceeds the threshold voltage, v d uvlo becomes active. once acti ve, the status of output voltage remains on even if v d voltage drops. (when v in voltage drops, scp engages and output switches off.) unlike en and v cc , it is effective at output startup. v d uvlo can be restored either by reconnecting the en pin or v cc pin. ? current limit when output is on, the current limit func tion monitors the internal ic output current against the parameter value. when current exceeds this level, the current limit module lowers th e output current to protect the load ic. when the overcurrent state is eliminated, output voltage is rest ored to the parameter value. however, when output voltage falls to or below the scp startup voltage, the scp function become s active and the output switches off. ? nrcs (non rush current on start-up) the soft start function enabled by connecting an external capacitor between the nrcs pin and ground. output ramp-up can be set for any period up to the time the nrcs pin reaches v fb (0.65v). during startup, the nrcs pin serves as a 20a (typ) constant current source to charge the external capaci tor. output start time is calculated via the formula below. nrcs fb nrcs nrcs i v c .) typ ( t ? ? ? tsd (thermal shut down) the shutdown (tsd) circuit automatically is latched off w hen the chip temperature exceeds the threshold temperature after the programmed time period elapses, thus serving to protect the ic against ?ther mal runaway? and heat damage. because the tsd circuit is intended to shut down the ic only in the presence of extreme heat, it is crucial that the tj (max) parameter not be exceeded in the thermal design ,in or der to avoid potential problems with the tsd. ? v in the v in line acts as the major current supply line, and is c onnected to the output nchfet drain. since no electrical connection (such as between the v cc pin and the esd protection diode) is necessary, v in operates independent of the input sequence. however, since an output nchfet body diode exists between v in and v o , a v in -v o electric (diode) connection is present. note, therefore, that when output is switched on or off, re verse current may flow to v in from v o . ? scp when output voltage (vo) drop s, the ic assumes that v o pin is shorted to gnd and switches the output voltage off. after the gnd short has been detected and the programmed delay time has elapsed, output is latched off. it is also effective during output startup. scp can be cleared ei ther by reconnecting the en pin or v cc pin. technical note 7/15 www.rohm.com 2011.01 - rev. a ? 2011 rohm co., ltd. all rights reserved. bd35281hfn timing chart en on/off v cc on/off v in v cc en nrcs vo t startup 0.65v(typ) v in v cc en nrcs vo t hysteresis uvlo startup 0.65v(typ) technical note 8/15 www.rohm.com 2011.01 - rev. a ? 2011 rohm co., ltd. all rights reserved. bd35281hfn timing chart v in on scp off v cc en nrcs vo v in uvlo v in v cc en nrcs vo v in scp startup voltage scp delay time technical note 9/15 www.rohm.com 2011.01 - rev. a ? 2011 rohm co., ltd. all rights reserved. bd35281hfn evaluation board bd35281hfn evaluation board list component rating manufacturer product name u1 - rohm bd35281hfn c1 1f murata grm188b11a105kd c3 10f kyocera cm32x5r226m10a c5 22f kyocera cm32x5r226m10a c11 0.01f murata grm188b11h103kd c13 1000pf murata grm188b11h102kd r4 0 - jumper r8 0 - jumper bd35281hfn evaluation board layout (2nd layer and 3rd layer are gnd line.) bd35281hfn evaluation board schematic 1 2 3 4 8 7 6 5 v cc v cc v cc gnd gnd tp1 vo fb gnd vos nrcs v in r4 r8 c5 c6 c8 c9 r3 r7 r6 r5 u2 sw1 c2 c3 c7 c4 c11 c12 c1 en 7 5 6 8 4 3 2 1 gnd_s vo_s gnd gnd gnd c13 gnd tp2 v cc jpf2 jpf1 r9 c14 2 3 4 5 v in _s u3 gnd gnd gnd gnd gnd gnd gnd gnd gnd gnd gnd gnd gnd u1 bd35281hfn silk screen top layer bottom layer technical note 10/15 www.rohm.com 2011.01 - rev. a ? 2011 rohm co., ltd. all rights reserved. bd35281hfn recommended circuit example component recommended value programming notes and precautions c3 22f to assure output voltage stability, please be certain the output capacitors are connected between vo pin and gnd. output capacitors play a role in loop gain phase compensation and in mitigating output fluctuation during rapid changes in load level. insufficient capacitance may cause oscillati on, while high equivalent series reisistance (esr) will exacerbate output voltage fluctu ation under rapid load change conditions. while a 22f ceramic capacitor is recomended, actual stability is highly dependent on temperature and load conditions. also, note t hat connecting different types of capacitors in series may result in insufficient total ph ase compensation, thus ca using oscillation. in light of this information, please confirm op eration across a variety of temperature and load conditions. c1 1f input capacitors reduce the ou tput impedance of the voltage supply source connected to the (v cc ) input pins. if the impedance of this power supply were to increase, input voltage (v cc ) could become unstable, leading to oscillati on or lowered ripple rejection function. while a low-esr 1f capacitor with minimal susceptibility to temperature is recommended, stability is highly dependent on the input power supply characteristics and the substrate wiring pattern. in light of this information, please confirm operation across a variety of temperature and load conditions. c2 10f input capacitors reduce the ou tput impedance of the voltage supply source connected to the (v in ) input pins. if the impedance of this power supply were to increase, input voltage (v in ) could become unstable, leading to oscillation or lowered ripple rejection function. while a low-esr 10f capacitor with minimal susceptibility to temperature is recommended, stability is highly dependent on the input power supply characteristics and the substrate wiring pattern. in light of this information, please confirm operation across a variety of temperature and load conditions. c4 0.01f the non rush current on startup (nrcs) func tion is built into the ic to prevent rush current from going through the load (v in to v o ) and impacting output capacitors at power supply start-up. constant current comes fr om the nrcs pin when en is high or the uvlo function is deactivated. the temporary reference voltage is proportionate to time, due to the current charge of the nrcs pin capacitor, and output voltage start-up is proportionate to this reference voltage. capa citors with low susceptibility to temperature are recommended, in order to assure a stable soft-start time. c5 1000pf this component is employed when the c3 ca pacitor causes, or may cause, oscillation. it provides more precise internal phase correction. 4 3 2 1 8 7 6 5 c1 v cc r4 en c4 v in c2 c3 gnd fb v o c5 6 v cc en v in v o v o gnd fb nrcs technical note 11/15 www.rohm.com 2011.01 - rev. a ? 2011 rohm co., ltd. all rights reserved. bd35281hfn heat loss thermal design should allow operation within the following condi tions. note that the temperat ures listed are the allowed temperature limits, and thermal design should allow sufficient margin from the limits. 1. ambient temperature ta can be no higher than 100 . 2. chip junction temperature (tj) can be no higher than 150 . chip junction temperature can be determined as follows: calculation based on ambient temperature (ta) tj=ta+ j-a w reference values j-a:hson8 198.4 /w 92.4 /w 71.4 /w 1-layer substrate (copper foil area : below 0.2%) 1-layer substrate (copper foil area : 7%) 2-layer substrate (copper foil area : 65%) substrate size: 70 70 1.6mm 3 (substrate with thermal via) it is recommended to layout the via for heat radiation in the g nd pattern of reverse (of ic) when there is the gnd pattern in the inner layer (in using multiplayer substrat e). this package is so small (size: 2.9mm 3.0mm) that it is not available to layout the via in the bottom of ic. spreading the pattern a nd being increased the number of via like the figure below enable to get the superior heat radiation characteristic. (this figur e is the image. it is recommended that the via size and the number is designed suitable fo r the actual situation.). most of the heat loss that occurs in t he bd35281hfn is generated from the output nch fet. power loss is determined by the total v in -vo voltage and output current. be sure to confirm t he system input and output vo ltage and the output current conditions in relation to the heat dissipation characteristics of the v in and vo in the design. bearing in mind that heat dissipation may vary substantially depending on the substr ate employed (due to the power package incorporated in the bd3523xhfn) make certain to factor conditions su ch as substrate size into the thermal design. ? ? io(ave) ) (v voltage output - ) (v voltage input = (w) n consumptio power o in ? example) where v in =1.7v, vo=1.2v, io(ave) = 2a, ?? 1.0(w) = 2.0(a) (v) 1.2 - (v) 1.7 = (w) n consumptio power ? technical note 12/15 www.rohm.com 2011.01 - rev. a ? 2011 rohm co., ltd. all rights reserved. bd35281hfn input-output equivalent circuit diagram heat dissipation characteristics hson8 400k en 1k v in v cc vo 50k 10k 1k v cc fb 1k 1k v os nrcs v cc 1k 1k 1k 90k 210k 1k v cc 1k 1k power dissipation [pd] [w] 0 25 75 100 125 150 50 [ ] ambient temperature [ta] 1.0 0.5 0 2.0 1.5 (1) 0.63w (2) 1.35w (3) 1.75w (1) 1 layer substrate (substrate surface copper foil area: below 0.2%) j-a=198.4 /w (2) 2 layer substrate (substrate surface copper foil area:7%) j-a=92.4 /w (3) 2 layer substrate (substrate surface copper foil area:65%) j-a=71.4 /w technical note 13/15 www.rohm.com 2011.01 - rev. a ? 2011 rohm co., ltd. all rights reserved. bd35281hfn notes for use 1. absolute maximum ratings an excess in the absolute maximum ratings, such as supply voltage, temperature range of operating conditions, etc., can break down the devices, thus making impossible to identify breaking mode, such as a short circuit or an open circuit. if any over rated values will expect to exceed the absolute maximum ratings, consider adding circuit protection devices, such as fuses. 2. connecting the power supply connector backward connecting of the power supply in reverse polarity can damage ic. take precautions when connecting the power supply lines. an external direction diode can be added. 3. power supply lines design pcb layout pattern to provide low impedance gnd and supply lines. to obtain a low noise ground and supply line, separate the ground section and supply lines of the digital a nd analog blocks. furthermore, for all power supply terminals to ics, connect a capacitor between the power supply and the gnd terminal. when applying electrolytic capacitors in the circuit, not that capacitance characteristic values are reduced at low temperatures. 4. gnd voltage the potential of gnd pin must be minimu m potential in all operating conditions. 5.thermal design use a thermal design that allows for a suffic ient margin in light of the power dissipa tion (pd) in actual operating conditions. 6. inter-pin shorts and mounting errors use caution when positioning the ic fo r mounting on printed circuit boards. t he ic may be damaged if there is any connection error or if pins are shorted together. 7. actions in strong electromagnetic field use caution when using the ic in the presence of a strong electr omagnetic field as doing so may cause the ic to malfunction. 8. aso when using the ic, set the output transistor so that it does not exceed absolute maximum ratings or aso. 9. thermal shutdown circuit the ic incorporates a built-in thermal shutdown circuit (tsd circuit). the thermal shutdown circuit (tsd circuit) is designed only to shut the ic off to prevent thermal runaway. it is not designed to protect the ic or guarantee its operation. do not continue to use the ic after operat ing this circuit or use the ic in an envir onment where the operation of this circuit is assumed. tsd on temperature [c] (typ.) bd35281hfn 175 10. testing on application boards when testing the ic on an application boar d, connecting a capacitor to a pin with low impedance subjects the ic to stress. always discharge capacitors after each process or step. always turn the ic's power supply off before connecting it to or removing it from a jig or fixture during the inspection pr ocess. ground the ic during assembly steps as an antistatic measure. use similar precaution wh en transporting or storing the ic. output pin (example) technical note 14/15 www.rohm.com 2011.01 - rev. a ? 2011 rohm co., ltd. all rights reserved. bd35281hfn 11. regarding input pin of the ic this monolithic ic contains p+ isolation and p substrate layers between adjacent el ements in order to keep them isolated. p-n junctions are formed at the intersection of these p layers wi th the n layers of other elem ents, creating a parasitic diode or transistor. for example, the relation between each potential is as follows: when gnd > pin a and gnd > pin b, the p-n j unction operates as a parasitic diode. when gnd > pin b, the p-n junction operates as a parasitic transistor. parasitic diodes can occur inevitable in the structure of th e ic. the operation of parasitic diodes can result in mutual interference among circuits, operational faults, or physical damage. accordingly, methods by which parasitic diodes operate, such as applying a voltage that is lower than the gnd (p substrate) voltage to an input pin, should not be used. 12. ground wiring pattern. when using both small signal and large current gnd pattern s, it is recommended to isolate the two ground patterns, placing a single ground point at the gr ound potential of applicatio n so that the pattern wiring resistance and voltage variations caused by large currents do not cause variations in the small signal ground voltage. be careful not to change the gnd wiring pattern of any external components, either. example of ic structure resistor transistor (npn) n n n p + p + p p substrate gnd parasitic element pin a n n p + p + p p substrate gnd parasitic element pin b c b e n gnd pin a parasitic element pin b other adjacent elements e b c gnd parasitic element technical note 15/15 www.rohm.com 2011.01 - rev. a ? 2011 rohm co., ltd. all rights reserved. bd35281hfn ordering part number b d 3 5 2 8 1 h f n - t r part no. part no. package hfn: hson8 packaging and forming specification tr: embossed tape and reel direction of feed reel ? order quantity needs to be multiple of the minimum quantity. r1120 a www.rohm.com ? 2011 rohm co., ltd. all rights reserved. notice rohm customer support system http://www.rohm.com/contact/ thank you for your accessing to rohm product informations. more detail product informations and catalogs are available, please contact us. notes no copying or reproduction of this document, in part or in whole, is permitted without the consent of rohm co.,ltd. the content specied herein is subject to change for improvement without notice. the content specied herein is for the purpose of introducing rohm's products (hereinafter "products"). if you wish to use any such product, please be sure to refer to the specications, which can be obtained from rohm upon request. examples of application circuits, circuit constants and any other information contained herein illustrate the standard usage and operations of the products. the peripheral conditions must be taken into account when designing circuits for mass production. great care was taken in ensuring the accuracy of the information specied in this document. however, should you incur any damage arising from any inaccuracy or misprint of such information, rohm shall bear no responsibility for such damage. the technical information specied herein is intended only to show the typical functions of and examples of application circuits for the produc ts. rohm does not grant you, explicitly or implicitly, any license to use or exercise intellectual property or other rights held by rohm and other parties. rohm shall bear no responsibility whatsoever for any dispute arising from the use of such technical information. the products specied in this document are intended to be used with general-use electronic equipment or devices (such as audio visual equipment, ofce-automation equipment, commu- nication devices, electronic appliances and amusement devices). the products specied in this document are not designed to be radiation tolerant. while rohm always makes efforts to enhance the quality and reliability of its products, a product may fail or malfunction for a variety of reasons. please be sure to implement in your equipment using the products safety measures to guard against the possibility of physical injury, re or any other damage caused in the event of the failure of any product, such as derating, redundancy, re control and fail-safe designs. rohm shall bear no responsibility whatsoever for your use of any product outside of the prescribed scope or not in accordance with the instruction manual. the products are not designed or manufactured to be used with any equipment, device or system which requires an extremely high level of reliability the failure or malfunction of which may result in a direct threat to human life or create a risk of human injury (such as a medical instrument, transportation equipment, aerospace machinery, nuclear-reactor controller, fuel- controller or other safety device). rohm shall bear no responsibility in any way for use of any of the products for the above special purposes. if a product is intended to be used for any such special purpose, please contact a rohm sales representative before purchasing. if you intend to export or ship overseas any product or technology specied herein that may be controlled under the foreign exchange and the foreign trade law, you will be required to obtain a license or permit under the law. |
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