DMN3150LW document number: ds31514 rev. 1 - 2 1 of 4 www.diodes.com august 2008 ? diodes incorporated dmn3150l w new product n-channel enhancement mode fi eld effect transistor features ? low on-resistance: r ds(on) < 88m? @ v gs = 4.5v r ds(on) < 138m? @ v gs = 2.5v ? low gate threshold voltage ? low input capacitance ? fast switching speed ? low input/output leakage ? lead free by design/rohs compliant (note 2) ? "green" device (note 3) ? qualified to aec-q101 standards for high reliability mechanical data ? case: sot-323 ? case material: molded plastic, ?green? molding compound. ul flammability classification rating 94v-0 ? moisture sensitivity: level 1 per j-std-020d ? terminals: finish - matte tin annealed over alloy 42 leadframe. solderable per mil-std-202, method 208 ? terminal connecti ons: see diagram ? marking information: see page 3 ? ordering information: see page 3 ? weight: 0.006 grams (approximate) source equivalent circuit gate drain sot-323 d gs pin configuration top view maximum ratings @t a = 25c unless otherwise specified characteristic symbol value unit drain source voltage v dss 28 v gate-source voltage v gss 12 v drain current (note 1) t a = 25c t a = 70c i d 1.6 1.2 a drain current (note 1) pulsed i dm 6.4 a body-diode continuous current (note 1) i s 1.5 a thermal characteristics characteristic symbol value unit total power dissipation (note 1) p d 350 mw thermal resistance, junction to ambient @t a = 25c (note 1) r ja 357 c/w operating and storage temperature range t j, t stg -55 to +150 c electrical characteristics @t a = 25c unless otherwise specified characteristic symbol min typ max unit test condition off characteristics (note 4) drain-source breakdown voltage bv dss 28 ? ? v v gs = 0v, i d = 250 a zero gate voltage drain current i dss ? ? 800 na v ds = 28v, v gs = 0v gate-body leakage i gss ? ? 80 800 na v gs = 12v, v ds = 0v v gs = 19v, v ds = 0v on characteristics (note 4) gate threshold voltage v gs(th) 0.62 0.94 1.4 v v ds = v gs , i d = 250 a static drain-source on-resistance r ds(on) ? ? 73 115 88 138 m v gs = 4.5v, i d = 1.6a v gs = 2.5v, i d = 1.2a forward transconductance |y fs | ? 5.4 ? s v ds = 5v, i d = 2.7a source-drain diode forward voltage v sd ? ? 1.16 v v gs = 0v, i s = 1.5a dynamic characteristics input capacitance c iss ? 305 ? pf output capacitance c oss ? 74 ? pf reverse transfer capacitance c rss ? 48 ? pf v ds = 5v, v gs = 0v f = 1.0mhz notes: 1. device mounted on 1in 2 fr-4 pcb on 2oz. copper. t 10 sec. 2. no purposefully added lead. 3. diodes inc.'s "green" policy can be found on our website at http:// www.di odes.com/products/l ead_free/index.php. 4. short duration pulse test used to minimize self-heating effect.
dmn3150l w 0 2 4 6 8 v , drain-source voltage (v) fig. 1 typical output characteristics ds 0 2 4 6 8 0.5 1 1.5 2 2.5 3 v , gate-source voltage (v) fig. 2 typical transfer characteristics gs v = 5v pulsed ds 0 0.04 0.08 0.12 0.16 02 4 6 i , drain current (a) fig. 3 d on-resistance vs. drain current and gate voltage new product 8 r , s t a t i c d r ain-s o u r c e on-resistance ( ) ds(on) v = 4.5v gs v = 10v gs v = 2.5v gs fig. 4 typical total capacitance v , drain-source voltage (v) ds c , c a p a c i t an c e (p f ) c iss c oss c rss f = 1 mhz t = 25c a 0.4 0.6 0.8 1.0 1.2 1.4 0.6 0.8 1.0 1.2 1.4 1.6 -50 -25 0 25 50 75 100 125 150 t , ambient temperature (c) a fig. 6 normalized static drain-source on-resistance vs. ambient temperature r , s t a t i c d r ai n -s o u r c e on-resistance (normalized) ds(on) v = 4.5v i = 1.6a gs d DMN3150LW document number: ds31514 rev. 1 - 2 2 of 4 www.diodes.com august 2008 ? diodes incorporated
dmn3150l w 0 2 4 6 8 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 new product ordering information (note 5) part number case packaging DMN3150LW-7 sot-323 3000/tape & reel notes: 5. for packaging deta ils, go to our website at http://www.di odes.com/datasheets/ap02007.pdf . marking information 31n ym 31n = product type marking code ym = date code marking y = year (ex: v = 2008) m = month (ex: 9 = september) date code key year 2008 2009 2010 2011 2012 2013 2014 2015 code v w x y z a b c month jan feb mar apr may jun jul aug sep oct nov dec code 1 2 3 4 5 6 7 8 9 o n d package outline dimensions a m j l df b c h k g top view sot-323 dim min max typ a 0.25 0.40 0.30 b 1.15 1.35 1.30 c 2.00 2.20 2.10 d - - 0.65 f 0.30 0.40 0.425 g 1.20 1.40 1.30 h 1.80 2.20 2.15 j 0.0 0.10 0.05 k 0.90 1.00 1.00 l 0.25 0.40 0.30 m 0.10 0.18 0.11 0 8 - all dimensions in mm DMN3150LW document number: ds31514 rev. 1 - 2 3 of 4 www.diodes.com august 2008 ? diodes incorporated
DMN3150LW document number: ds31514 rev. 1 - 2 4 of 4 www.diodes.com august 2008 ? diodes incorporated dmn3150l w suggested pad layout new product important notice diodes incorporated and its subsidiaries rese rve the right to make modifications, enhancements, improvements, corrections or ot her changes without further notice to any product herein. diodes incorporat ed does not assume any liability arising out of the application or use of any product described herein; neither does it convey any license under its patent rights, nor the ri ghts of others. the user of products in such applications shall assume all risks of such use and will agree to hold diodes inco rporated and all the companies whose products are represented on our website, harmless against all damages. life support diodes incorporated products are not authoriz ed for use as critical components in life support devices or systems without the e xpressed written approval of the president of diodes incorporated. x e y c z dimensions value (in mm) z 2.8 x 0.7 y 0.9 c 1.9 e 1.0
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