may 2009 1 mitsubishi PM25CS1D120 flat-base type insulated package PM25CS1D120 feature inverter + drive & protection ic 3 phase 25a/1200v cstbt tm (the current senser and the thermal senser with a build-in cstbt tm .) monolithic gate drive & protection logic detection, protection & status indication circuits for, short- circuit, over-temperature & under-voltage application general purpose inverter, servo drives and other motor controls package outlines dimensions in mm 5-m4 nut 2- 5.5 mounting holes 23.79 2-2.54 2-2.54 2-2.54 5-2.54 6.5 50 10.16 10.16 15 19 19 19 label 19 10.16 106 0.3 28 11.6 (10) 16.5 30 7 120 14 wvunp 9 67.4 5.57 50 39 8.5 2.5 16.5 25 71015 31.2 1. vwpc 2. wp 3. vwp1 4. vvpc 5. vp 6. vvp1 7. vupc 8. up 9. vup1 10. vnc 11. vn1 12. wn 13. vn 14. un 15. fo te rm inal code 12.7 2.5 12.7 2.5
mitsubishi PM25CS1D120 flat-base type insulated package may 2009 2 1200 25 50 337 ?0 ~ +150 ratings v ces i c i cp p c t j collector-emitter voltage collector current collector current (peak) collector dissipation junction temperature v d = 15v, v cin = 15v t c = 25 c (note-1) t c = 25 c t c = 25 c (note-1) v a a w c maximum ratings (t j = 25 c, unless otherwise noted) inverter part symbol parameter condition unit internal functions block diagram v n u n w p v wp1 v wpc v p v vp1 v vpc u p v up1 v upc nwvup fo rfo v nc v n1 w n gnd in fo vcc gnd si out ot gnd in fo vcc gnd si out ot gnd in fo vcc gnd si out ot gnd in vcc gnd si out ot gnd in vcc gnd si out ot gnd in vcc gnd si out ot rfo = 1.5k ? *: tc measurement point is just under the chip. v fo i fo control part v ma 20 20 supply voltage input voltage fault output supply voltage fault output current symbol parameter condition ratings unit applied between : v up1 -v upc, v vp1 -v vpc v wp1 -v wpc , v n1 -v nc applied between : u p -v upc , v p -v vpc, w p -v wpc u n ?v n ?w n -v nc applied between : f o -v nc sink current at f o terminals 20 20 v d v cin v v
mitsubishi PM25CS1D120 flat-base type insulated package may 2009 3 parameter symbol supply voltage protected by sc supply voltage (surge) storage temperature isolation voltage condition v cc(surge) t stg v iso ratings v cc(prot) 800 1000 ?0 ~ +125 2500 unit v c v rms v v d = 13.5 ~ 16.5v inverter part, t j = +125 c start applied between : p-n, surge value 60hz, sinusoidal, charged part to base, ac 1 min. to ta l system 0.37 0.59 0.046 c/w r th(j-c)q r th(j-c)f r th(c-f) inverter igbt part (per 1 element) (note-1) inverter fwdi part (per 1 element) (note-1) case to fin, (per 1 module) thermal grease applied (note-1) symbol condition unit min. junction to case thermal resistances thermal resistances contact thermal resistance (note-1) tc (under the chip) measurement point is below. parameter limits t yp. max. up igbt 21.4 4.7 vp wp un vn wn fwdi 21.4 ?.9 igbt 65.0 4.7 fwdi 65.0 ?.9 igbt 90.0 4.7 fwdi 90.0 ?.9 igbt 36.0 ?.4 fwdi 36.0 ?.9 igbt 51.0 ?.4 fwdi 51.0 ?.9 igbt 76.0 ?.4 fwdi 76.0 ?.9 arm axis x y (unit : mm) 2.15 2.35 3.50 2.0 0.8 1.0 2.8 1.2 1 10 min. typ. max. collector-emitter saturation volt age collector-emitter cutoff current ? c = 25a, v d = 15v, v cin = 15v (fig. 2) t j = 25 c t j = 125 c electrical characteristics (t j = 25 c, unless otherwise noted) inverter part parameter symbol condition v ce(sat) i ces v ec t on t rr t c(on) t off t c(off) limits 0.3 1.65 1.85 2.50 0.65 0.20 0.35 1.10 0.35 t j = 25 c t j = 125 c fwdi forward voltage switching time v d = 15v, v cin = 0v ? 15v v cc = 600v, i c = 25a t j = 125 c inductive load (fig. 3,4) v ce = v ces , v d = 15v (fig. 5) v d = 15v, i c = 25a v cin = 0v, pulsed (fig. 1) v ma v s unit bottom view x y pnu vw
mitsubishi PM25CS1D120 flat-base type insulated package may 2009 4 ?0 t j 125 c v d = 15v, v cin = 15v (note-2) v d = 15v (note-2) v th(on) v th(off) sc t off(sc) ot ot (hys) uv uv r i fo(h) i fo(l) t fo t rip level hysteresis t rip level reset level ?0 t j 125 c, v d = 15v (fig. 3,6) v d = 15v (fig. 3,6) v d = 15v, v cin = 15v applied between : u p -v upc , v p -v vpc , w p -v wpc u n ?v n ?w n -v nc i d c v ma ms 12 4 1.8 2.3 12.5 0.01 15 ma circuit current input on threshold voltage input off threshold voltage short circuit trip level short circuit current delay t ime over temperature protection supply circuit under-voltage protection fault output current minimum fault output pulse width control part 1.2 1.7 38 135 1 1.5 1.0 parameter symbol condition max. min. typ. unit limits 6 2 1.5 2.0 1.0 20 12.0 12.5 10 1.8 (note-2) fault output is given only when the internal sc, ot & uv protection. fault output of sc, ot & uv protection operate by lower arms. fault output of sc protection given pulse. fault output of ot, uv protection given pulse while over trip level. v s v n1 -v nc v *p1 -v *pc a 3.5 2.0 mounting part screw : m5 main terminal part screw : m4 symbol parameter mounting torque w eight condition unit n ?m g limits min. t yp. max. 2.5 1.5 3.0 1.7 400 mechanical ratings and characteristics recommended conditions for use recommended value unit condition symbol parameter v applied across p-n terminals applied between : v up1 -v upc , v vp1 -v vpc v wp1 -v wpc , v n1 -v nc (note-3) applied between : u p -v upc , v p -v vpc , w p -v wpc u n ?v n ?w n -v nc using application circuit of fig. 8 supply voltage control supply voltage input on voltage input off voltage pwm input frequency 800 15.0 1.5 0.8 9.0 20 v cc v cin(on) v cin(off) f pwm v d v v khz (note-3) with ripple satisfying the following conditions: dv/dt swing 5v/ s, variation 2v peak to peak t dead arm shoot-through blocking t ime for ipm s each input signals (fig. 7) 2.5 s 5v/ s 2v gnd 15v detect temperature of igbt chip
mitsubishi PM25CS1D120 flat-base type insulated package may 2009 5 precautions for testing 1. before applying any control supply voltage (v d ), the input terminals should be pulled up by resistors, etc. to their corre- sponding supply voltage and each input signal should be kept off state. after this, the specified on and off level setting for each input signal should be done. 2. when performing ?c?tests, the turn-off surge voltage spike at the corresponding protection operation should not be al- lowed to rise above v ces rating of the device. (these test should not be done by using a curve tracer or its equivalent.) p, (u,v,w) u,v,w, (n) u,v,w, (n) v d (all) in fo in fo v d (all) v cin (0v) ic v v p, (u,v,w) v cin (15v) ic fig. 7 dead time measurement point example fig. 1 v ce(sat) test fig. 2 v ec, ( v fm ) test 0v 1.5v 1.5v 1.5v 2v 2v 2v 0v t t t dead t dead t dead 1.5v: input on threshold voltage vth(on) typical value, 2v: input off threshold voltage vth(off) typical value ipm?input signal v cin (upper arm) ipm?input signal v cin (lower arm) 10% 90% trr irr tr td(on) tc(on) tc(off) td(off) v cin ic v ce 10% 10% 10% 90% tf (ton = td(on) + tr) (toff = td(off) + tf) fo p n n c s c s u,v,w vcc vcc ic ic v d (all) v d (all) p u,v,w v cin v cin v cin ( 15v ) v cin ( 15v ) fo fig. 3 switching time and sc test circuit fig. 4 switching time test waveform a) lower arm switching signal input (upper arm) signal input (lower arm) signal input (upper arm) signal input (lower arm) b) upper arm switching v cin fig. 5 i ces test fig. 6 sc test waveform sc trip short circuit current toff(sc) v d (all) u,v,w, (n) p, (u,v,w) a pulse v ce v cin (15v) ic fo in fo constant current
mitsubishi PM25CS1D120 flat-base type insulated package may 2009 6 notes for stable and safe operation ; design the pcb pattern to minimize wiring length between opto-coupler and ipm s input terminal, and also to minimize the stray capacity between the input and output wirings of opto-coupler. connect low impedance capacitor between the vcc and gnd terminal of each fast switching opto-coupler. fast switching opto-couplers: t plh , t phl 0.8 s, use high cmr type. slow switching opto-coupler: ctr > 100% use 4 isolated control power supplies (v d ). also, care should be taken to minimize the instantaneous voltage charge of the power supply. make inductance of dc bus line as small as possible, and minimize surge voltage using snubber capacitor between p and n terminal. use line noise filter capacitor (ex. 4.7nf) between each input ac line and ground to reject common-mode noise from ac line and improve noise immunity of the system. : interface which is the same as u-phase fig. 8 application example circuit out si ot ot ot ot gnd gnd in vcc u v w n p m if + out si gnd gnd in vcc out si gnd gnd in vcc out si gnd gnd in fo vcc ot out si gnd gnd in fo vcc ot out si gnd gnd in fo vcc vwp1 wp vwpc un vn vn1 wn vnc rfo fo vvp1 vp vvpc 0.1 1k ? 0.1 0.1 20k ? 20k ? 20k ? 10 10 10 20k ? 10 0.1 vup1 up vupc if if if 5v v d v d v d v d
mitsubishi PM25CS1D120 flat-base type insulated package may 2009 7 performance curves 0 0 0.5 1.0 1.5 2.0 35 30 25 20 15 10 5 0 0.5 1.0 1.5 2.0 2.5 3.0 0 0510 15 20 25 30 35 0.5 1.0 1.5 2.0 2.5 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 12 13 14 15 16 17 18 t j = 25 c 15v 13v v d = 17v v d = 15v t j = 25 c t j = 125 c v d = 15v t j = 25 c t j = 125 c i c = 25a t j = 25 c t j = 125 c t on t off v cc = 600v v d = 15v t j = 25 c t j = 125 c inductive load v cc = 600v v d = 15v t j = 25 c t j = 125 c inductive load t c(on) t c(off) output characteristics (typical) collector current i c (a) collector-emitter voltage v ce(sat) (v) collector-emitter saturation voltage v ce(sat) (v) collector-emitter saturation voltage (vs. ic) characteristics (typical) collector current i c (a) collector-emitter saturation voltage (vs. v d ) characteristics (typical) collector-emitter saturation voltage v ce(sat) (v) control power supply voltage v d (v) switching time t on , t off ( s) switching time (t on , t off ) characteristics (typical) collector current i c (a) switching time (tc (on) , tc (off) ) characteristics (typical) switching time t c(on) , t c(off) ( s) collector current i c (a) 10 0 10 2 7 5 3 2 10 1 7 5 3 2 4 4 10 0 10 1 23457 10 2 23457 10 ? 10 0 2 3 4 5 7 10 1 2 3 4 5 7 10 ? 10 0 2 3 4 5 7 10 1 2 3 4 5 7 10 0 10 1 23457 10 2 23457 collector recovery current ? c (a) emitter-collector voltage v ec (v) diode forward characteristics (typical)
mitsubishi PM25CS1D120 flat-base type insulated package may 2009 8 0 0.5 1.0 1.5 2.0 2.5 3.0 0 5 10 15 20 25 30 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 0 5 10 15 20 25 0 5 10 15 20 25 30 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 0 5 10 15 20 25 30 0 0 5.0 10.0 15.0 20.0 25.0 5 10 15 20 25 0 2 4 6 8 10 12 14 16 18 20 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 e on e off v cc = 600v v d = 15v t j = 25 c t j = 125 c inductive load v cc = 600v v d = 15v t j = 25 c t j = 125 c inductive load t rr i rr v cc = 600v v d = 15v t j = 25 c t j = 125 c inductive load n-side p-side v d = 15v t j = 25 c t j = 125 c v d = 15v ?0 0 50 100 150 ?0 0 50 100 150 uv t uv r collector current i c (a) switching loss characteristics (typical) switching loss e on , e off (mj/pulse) collector recovery current ? c (a) switching recovery loss characteristics (typical) switching loss e rr (mj/pulse) diode reverse recovery characteristics (typical) collector recovery current ? c (a) recovery time t rr ( s) recovery current l rr (a) f c (khz) i d vs. f c characteristics (typical) i d (ma) t j ( c) uv trip level vs. t j characteristics (typical) sc trip level vs. t j characteristics (typical) uv t /uv r t j ( c) sc
mitsubishi PM25CS1D120 flat-base type insulated package may 2009 9 transient thermal impedance characteristics (typical) normalized transient thermal impedance z th(j-c) 23 57 10 ? 23 57 23 57 10 ? 23 57 10 1 23 57 10 0 10 ? 23 57 10 ? 10 ? 10 ? 10 ? 10 ? 5 7 10 0 2 3 5 7 2 3 5 7 2 3 single pulse igbt part; per unit base = r th(j-c) q = 0.37 c/ w fwdi part; per unit base = r th(j-c) f = 0.59 c/ w
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