2007. 6. 13 1/2 semiconductor technical data SMBB26 schottky barrier type diode revision no : 1 switching type power supply applications. features low profile surface mount package. low power loss, high efficiency. for use in low voltage, high frequency inverters, free wheeling, and polarity protection applications. application switching power supply. dc/dc converter. home appliances, office equipment. telecommunication. maximum rating (ta=25 ) characteristic symbol rating unit maximum repetitive peak reverse voltage v rrm 60 v average output rectitifed current i o 2 a peak one cycle surge forward current (non-repetitive 60hz) i fsm 50 a junction temperature t j -40 150 storage temperature range t stg -40 150 electrical characteristics (ta=25 ) characteristic symbol test condition min. typ. max. unit peak forward voltage v fm i fm =2.0a - - 0.65 v repetitive peak reverse current i rrm v rrm =rated, tj=25 - - 0.1 ma v rrm =rated, tj=100 - - 10 ma total capacitance c t v r =4v, f=1mhz - - 200 pf thermal resistance r th(j-1) junction to lead - - 15 /w type name marking b26 lot no. smb dim millimeters a a b b 1 2 c c d d e e e f f g 4.25 ~ 4.75 3.48 ~ 3.73 1.93 ~ 2.08 5.26 ~ 5.46 0.90 ~ 1.41 1.99 ~ 2.61 0.15 ~ 0.31 0.10 ~ 0.20 h g h 1. anode 2. cathode
2007. 6. 13 2/2 SMBB26 revision no : 1 i f - v f forward voltage v f (v) forward current i f (a) number of cycles at 60hz peak surge forward current i (a) 1 0 20 40 80 60 fsm 10 surge forward current (non - repetitive) 100 ta=25 c f=60hz p f - i f forward current i f (a) 0 0.0 0.5 1.0 1.5 3.5 2.5 3.0 2.0 forward power p f (w) 123456 tp t t l - i f forward current (a) 0 0 20 40 60 80 100 120 160 140 12 maximum allowable temperature tl max ( c) 0 0.2 0.4 0.6 0.8 1.0 1.2 10 1 0.1 t j =150 c i r - v r reverse voltage v r (v) reverse current i r (ma) 0 102030 5060 40 100 10 0.1 0.001 0.01 1 d=tp/t 0.1 0.2 0.5 d=0.8 dc t j =150 c t j =100 c t j =25 c t j =150 c t j =100 c t j =25 c
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