? 2003 ixys all rights reserved 1 - 2 335 ixkf 40N60SCD1 coolmos power mosfet with series schottky diode and ultra fast antiparallel diode in high voltage isoplus i4-pac tm features ? fast coolmos power mosfet- 3 rd generation - high blocking voltage - low on resistance - low thermal resistance due to reduced chip thickness series schottky diode prevents current flow through mosfet?s body diode - very low forward voltage - fast switching ultra fast hiperfred tm anti parallel diode - low operating forward voltage - fast and soft reverse recovery - low switching losses isoplus i4-pac tm high voltage package - isolated back surface - low coupling capacity between pins and heatsink - enlarged creepage towards heatsink - enlarged creepage between high voltage pins - application friendly pinout - high reliability - industry standard outline - ul registered e 72873 applications converters with circuit operation leading to current flow through switches in reverse direction - e. g. - phaseleg with inductive load - resonant circuits high switching frequency examples switched mode power supplies (smps) uninterruptable power supplies (ups) dc-dc converters welding converters converters for inductive heating drive converters coolmos is a trademark of infineon technologies ag. ixys reserves the right to change limits, test conditions and dimensions. i d25 = 38 a v dss = 600 v r dson = 60 m ? ? ? ? ? t rr = 70 ns mosfet t symbol conditions maximum ratings v dss t vj = 25c to 150c 600 v v gs 20 v i d25 t c = 25c 38 a i d90 t c = 90c 25 a symbol conditions characteristic values (t vj = 25 c, unless otherwise specified) min. typ. max. r dson v gs = 10 v; i d = i d90 60 70 m ? v gsth v ds = 20 v; i d = 3 ma; 2.1 3.9 v i dss v ds = v dss ; v gs = 0 v; t vj = 25c 0.3 ma t vj = 125c 0.5 ma i gss v gs = 20 v; v ds = 0 v 100 na q g 250 nc q gs 25 nc q gd 120 nc t d(on) 20 ns t r 30 ns t d(off) 110 ns t f 10 ns r thjc 0.45 k/w r thjh with heat transfer paste 0.9 k/w v gs = 10 v; v ds = 350 v; i d = 50 a v gs = 10 v; v ds = 380 v; i d = 50 a; r g = 1.8 ? preliminary data e 72873
? 2003 ixys all rights reserved 2 - 2 335 ixkf 40N60SCD1 dimensions in mm (1 mm = 0.0394") component symbol conditions maximum ratings v isol i isol 1 ma; 50/60 hz 2500 v~ t vj -40...+150 c t stg -40...+125 c f c mounting force with clip 20 ... 120 n symbol conditions characteristic values min. typ. max. c p coupling capacity between shorted pins and mounting tab in the case 40 pf d s , d a d pin - s pin 7 mm d s , d a pin - backside metal 5.5 mm weight 9g series schottky diode d s symbol conditions maximum ratings i f25 t c = 25c 60 a i f90 t c = 90c 40 a symbol conditions characteristic values (t vj = 25 c, unless otherwise specified) min. typ. max. v f i f = 20 a; t vj = 25c 0.9 v t vj = 125c 0.7 v r thjc 2 k/w r thjh with heat transfer paste 2.9 k/w anti parallel diode d f symbol conditions maximum ratings i f25 t c = 25c 32 a i f90 t c = 90c 16 a symbol conditions characteristic values (t vj = 25 c, unless otherwise specified) min. typ. max. v f i f = 20 a; t vj = 25c 2.1 2.5 v t vj = 125c 1.4 v i rm i f = 30 a; di f /dt = -500 a/s; t vj = 125c 15 a t rr v r = 600 v; v ge = 0 v 70 ns r thjc 1.3 k/w r thjh with heat transfer paste 2.6 k/w
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