tm march 2009 FDB088N08 n-channel powertrench ? mosfet ?2009 fairchild semiconductor corporation FDB088N08 rev. a www.fairchildsemi.com 1 FDB088N08 n-channel powertrench ? mosfet 75v, 85a, 8.8m features ?r ds(on) = 7.3 m ( typ.)@ v gs = 10v, i d = 75a ? fast switching speed ? low gate charge ? high performance trench tec hnology for extremely low r ds(on) ? high power and current handling capability ? rohs compliant description this n-channel mosfet is pr oduced using fairchild semicon- ductor?s adcanced powertrench process that has been espe- cially tailored to minimize the on-state resistance and yet maintain superior switching performance. application ? dc to dc convertors / synchronous rectification absolute maximum ratings t c = 25 o c unless otherwise noted* thermal characteristics symbol parameter FDB088N08 units v dss drain to source voltage 75 v v gss gate to source voltage 20 v i d drain current - continuous (t c = 25 o c, silicon limited) - continuous (t c = 100 o c, silicon limited) - continuous (t c = 25 o c, package limited) 85* a 60 a 75 a i dm d r a i n c u r r e n t - p u l s e d (note 1) 340 a e as single pulsed avalanche energy (note 2) 309 mj dv/dt peak diode recovery dv/dt (note 3) 6.3 v/ns p d power dissipation (t c = 25 o c) 160 w - derate above 25 o c1.06w/ o c t j , t stg operating and storage temperature range -55 to +175 o c t l maximum lead temperature for soldering purpose, 1/8? from case for 5 seconds 300 o c symbol parameter ratings units r jc thermal resistance, junction to case 0.94 o c/w r ja thermal resistance, junction to ambient 62.5 * calculated continuous current based on maximum allowable junction temperature. package limitation current is 75a. d g s g s d d 2 -pak fdb series
FDB088N08 n-channel powertrench ? mosfet FDB088N08 rev. a www.fairchildsemi.com 2 package marking and ordering information t c = 25 o c unless otherwise noted electrical characteristics off characteristics on characteristics dynamic characteristics switching characteristics drain-source diod e characteristics device marking device package reel size tape width quantity FDB088N08 FDB088N08 d2-pak 330mm 24mm 800 symbol parameter test conditions min. typ. max. units bv dss drain to source breakdown voltage i d = 250 a, v gs = 0v, t c = 25 o c75 - - v bv dss t j breakdown voltage temperature coefficient i d = 250 a, referenced to 25 o c - 0.07 - v/ o c i dss zero gate voltage drain current v ds = 75v, v gs = 0v - - 1 a v ds = 75v, t c = 150 o c - - 500 i gss gate to body leakage current v gs = 20v, v ds = 0v - - 100 na v gs(th) gate threshold voltage v gs = v ds , i d = 250 a2.0-4.0v r ds(on) static drain to source on resistance v gs = 10v, i d = 75a - 7.3 8.8 m g fs forward transconductance v ds = 10v, i d = 37.5a (note 4) - 300 - s c iss input capacitance v ds = 25v, v gs = 0v f = 1mhz - 4960 6595 pf c oss output capacitance - 355 470 pf c rss reverse transfer capacitance - 200 300 pf q g(tot) total gate charge at 10v v ds = 60v, i d = 75a v gs = 10v (note 4, 5) - 91 118 nc q gs gate to source gate charge - 22 - nc q gd gate to drain ?miller? charge - 28 - nc t d(on) turn-on delay time v dd = 37.5v, i d = 75a r gen = 25 , v gs = 10v (note 4, 5) - 45 100 ns t r turn-on rise time - 158 326 ns t d(off) turn-off delay time - 244 498 ns t f turn-off fall time - 102 214 ns i s maximum continuous drain to source diode forward current - - 85 a i sm maximum pulsed drain to source diode forward current - - 340 a v sd drain to source diode forward voltage v gs = 0v, i sd = 75a - - 1.25 v t rr reverse recovery time v gs = 0v, i sd = 75a di f /dt = 100a/ s (note 4) - 41.1 - ns q rr reverse recovery charge - 80.7 - nc notes: 1. repetitive rating: pulse width limited by maximum junction temperature 2. l = 0.11mh, i as = 75a, v dd = 50v, r g = 25 , starting t j = 25 c 3. i sd 75a, di/dt 200a/ s, v dd bv dss , starting t j = 25 c 4. pulse test: pulse width 300 s, duty cycle 2% 5. essentially independent of operating temperature typical characteristics
FDB088N08 n-channel powertrench ? mosfet FDB088N08 rev. a www.fairchildsemi.com 3 typical performance characteristics figure 1. on-region characteristics figure 2. transfer characteristics figure 3. on-resistance variation vs. figure 4. body diode forward voltage drain current and gate vo ltage variation vs. source current and temperature figure 5. capacitance characteristics figure 6. gate charge characteristics 0.1 1 10 10 100 0.2 2 *notes: 1. 250 s pulse test 2. t c = 25 o c v gs = 15.0 v 10.0 v 8.0 v 7.0 v 6.5 v 6.0 v 5.5 v 5.0 v v ds ,drain-source voltage[v] i d ,drain current[a] 500 234567 1 10 100 500 25 o c -55 o c 175 o c *notes: 1. v ds = 20v 2. 250 s pulse test v gs ,gate-source voltage[v] i d ,drain current[a] 0.0 0.4 0.8 1.2 1.6 10 100 3 *notes: 1. v gs = 0v 2. 250 s pulse test 175 o c i s , reverse drain current [a] v sd , body diode forward voltage [v] 25 o c 500 0 100 200 300 0.005 0.010 0.015 0.020 *note: t c = 25 o c v gs = 20v v gs = 10v r ds(on) [ ] , drain-source on-resistance i d , drain current [a] 0.1 1 10 30 0 2000 4000 6000 8000 c oss c iss c iss = c gs + c gd (c ds = shorted) c oss = c ds + c gd c rss = c gd *notes: 1. v gs = 0v 2. f = 1mhz c rss capacitances [pf] v ds , drain-source voltage [v] 0 20406080100 0 2 4 6 8 10 *note: i d = 75a v ds = 15v v ds = 37.5v v ds = 60v v gs , gate-source voltage [v] q g , total gate charge [nc]
FDB088N08 n-channel powertrench ? mosfet FDB088N08 rev. a www.fairchildsemi.com 4 typical performance characteristics (continued) figure 7. breakdown voltage variation figure 8. on-resistance variation vs. temperature vs. temperature figure 9. maximum safe operating area figure 10. maximum drain current vs. case temperature figure 11. transient thermal response curve -100 -50 0 50 100 150 200 0.0 0.5 1.0 1.5 2.0 2.5 3.0 *notes: 1. v gs = 10v 2. i d = 75a r ds(on) , [normalized] drain-source on-resistance t j , junction temperature [ o c] -100 -50 0 50 100 150 200 0.8 0.9 1.0 1.1 1.2 *notes: 1. v gs = 0v 2. i d = 1ma bv dss , [normalized] drain-source breakdown voltage t j , junction temperature [ o c ] 25 50 75 100 125 150 175 0 20 40 60 80 100 i d , drain current [a] t c , case temperature [ o c] limited by package 110100200 0.1 1 10 100 1000 10 s 100 s 1ms 10ms i d , drain current [a] v ds , drain-source voltage [v] operation in this area is limited by r ds(on) *notes: 1. t c = 25 o c 2. t j = 175 o c 3. single pulse dc 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 0.05 0.01 0.1 1 2 0.01 0.1 0.2 0.05 0.02 *notes: 1. z jc (t) = 0.94 o c/w max. 2. duty factor, d= t 1 /t 2 3. t jm - t c = p dm * z jc (t) 0.5 single pulse thermal response [z jc ] rectangular pulse duration [sec] t 1 p dm t 2
FDB088N08 n-channel powertrench ? mosfet FDB088N08 rev. a www.fairchildsemi.com 5 mechanical dimensions
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