SSF2336 d g s description the SSF2336 uses advanced trench technology to provide excellent r ds(on) , low gate charge and operation with gate voltages as low as 2.5v. this device is suitable for use as a battery protection or in other switching application. schematic diagram package marking and ordering information device marking device device package reel size tape width quantity 2336 SSF2336 sot-23 ?180mm 8 mm 3000 units absolute maximum ratings(ta=25 unless otherwise noted) parameter symbol limit unit drain-source voltage v ds 20 v gate-source voltage v gs 12 v i d 4.2 a drain current-continuous@ current-pulsed (note 1) i dm 33 a maximum power dissipation p d 1.25 w operating junction and st orage temperature range t j ,t stg -55 to 150 thermal characteristics thermal resistance,junction-to-ambient (note 2) r ja 140 /w electrical characteristics (ta=25 unless otherwise noted) parameter symbol condition min typ max unit off characteristics drain-source breakdown voltage bv dss v gs =0v i d =250 a 20 v general features v = 20v,i ds d = 4.2a < 80m ? @ v r ds(on) gs =2.5v < 45m ? @ v r ds(on) gs =4.5v high power and current handing capability lead free product is acquired markin g and p in assi g nment surface mount package application battery protection load switch power management sot-23 to p view ?silikron semiconductor co.,ltd. 1 http://www.silikron.com v1.0
SSF2336 zero gate voltage drain current i v =20v,v =0v 1 a dss ds gs gate-body leakage current i v =12v,v =0v 100 na gss gs ds on characteristics (note 3) gate threshold voltage v v =v gs(th) ds gs ,i d =250 a 0.6 1.2 v v =2.5v, i gs d =3.6a 50 80 m ? drain-source on-state resistance r ds(on) v =4.5v, i gs d =4.2a 35 45 m ? forward transconductance g v =10v,i fs ds d =4a 8 s dynamic characteristics (note4) input capacitance c 700 pf lss output capacitance c oss 100 pf v =15v,v reverse transfer capacitance c rss ds gs =0v, f=1.0mhz 90 pf switching characteristics (note 4) turn-on delay time t 7 ns d(on) turn-on rise time t r 50 ns v =10v, r = 2.8 ? dd l turn-off delay time t d(off) 26 ns =4.5v,r turn-off fall time t f v gs gen =6 ? , i d =3.6a, 10 ns total gate charge q 9 nc g gate-source charge q gs 2 nc v =10v,i gate-drain charge q gd ds d =4.2a,v =4.5v gs 1.8 nc drain-source diode characteristics diode forward voltage (note 3) v v =0v,i =1.3a 1.2 v sd gs s notes: 1. repetitive rating: pulse width limited by maximum junction temperature. 2. surface mounted on fr4 board, t 10 sec. 3. pulse test: pulse width 300 s, duty cycle 2%. 4. guaranteed by design, not subject to production testing. ?silikron semiconductor co.,ltd. 2 http://www.silikron.com v1.0
SSF2336 typical electrical and th ermal characteristics v in v out 10% 10% 50% 50% pulse width inverted t d(on) 90% t r t on 90% 10% t off t d(off) t f 90% v in v out 10% 10% 50% 50% pulse width inverted t d(on) 90% 90% t r t on 90% 10% t off t d(off) t f 90% vgs rgen vin g vdd rl vout s d figure 2:switching waveforms figure 1: switching test circuit normalized effective transient thermal impedance square wave pluse duration(sec) figure 3: normalized maximum transient thermal impedance ?silikron semiconductor co.,ltd. 3 http://www.silikron.com v1.0
SSF2336 sot-23 package information dimensions in millimeters (unit:mm) dimensions in millimeters symbol min. max. a 0.900 1.150 a1 0.000 0.100 a2 0.900 1.050 b 0.300 0.500 c 0.080 0.150 d 2.800 3.000 e 1.200 1.400 e1 2.250 2.550 e 0.950typ e1 1.800 2.000 l 0.550ref l1 0.300 0.500 0 8 notes 1. all dimensions are in millimeters. 2. tolerance 0.10mm (4 mil) unless otherwise specified 3. package body sizes exclude mold flash and gate burrs. mold flash at the non-lead sides should be less than 5 mils. 4. dimension l is measured in gauge plane. 5. controlling dimension is millimeter, converted inch dimensions are not necessarily exact. ?silikron semiconductor co.,ltd. 4 http://www.silikron.com v1.0
SSF2336 attention: any and all silikron products described or contained herein do not have specifications that c an handle applications that requ ire extremely high levels of reliability, such as life-support system s, aircraft's control systems, or other applications whose fai lure can be reasonably expected to result in serious physical and/or material damage. consult with your silikron representative nearest you before using an y silikron products described or contained herein in such applications. silikron assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum rati ngs, operating condition ranges, or other parameters) listed in products specifications of any and all sili kron products described or contained herein. specifications of an y and all silikron products described or contained here in stipulate the performance, characteristics, and functions of the described products in the independent state, and are no t guarantees of the performanc e, characteristics, and functions of the described products as moun ted in the customer?s products or equipm ent. to verify symptoms and states that cannot be evaluated in an indepen dent device, the customer should always evaluate and test devices mounted in the customer ?s products or equipment. silikron semiconductor co.,ltd. strives to supply high-quality high-reliability prod ucts. however, any a nd all semiconductor products fail with some probability. it is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. when designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, an d structural design. in the event that any or all silikron products(including te chnical data, services) described or contained herein are controll ed under any of applicable local export control laws and regulations, su ch products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law. no part of this publication may be repro duced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any informat ion storage or retrieval system, or other wise, without the prior written permission of silikron semiconductor co.,ltd. information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. silikron believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual proper ty rights or other rights of third parties. any and all information described or contained herein are subject to change without notice due to product/technology improvement, et c. when designing equipment, re fer to the "delivery specific ation" for the silikron product that you intend to use. this catalog provides information as of dec, 2008. specificat ions and information herein are subject to change without notice . ?silikron semiconductor co.,ltd. 5 http://www.silikron.com v1.0
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