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jmnic product specification silicon npn power transistors 2SC1905 description ? ? with to-220c package ? high breakdown voltage ? large collector power dissipation applications ? color tv horizontal deflection driver pinning pin description 1 base 2 collector;connected to mounting base 3 emitter absolute maximum ratings(ta=25 ?? ) symbol parameter conditions value unit v cbo collector-base voltage open emitter 350 v v ceo collector-emitter voltage open base 300 v v ebo emitter-base voltage open collector 7.5 v i c collector current 200 ma i cm collector current-peak 400 ma p c collector power dissipation t c =25 ?? 15 w t j junction temperature 150 ?? t stg storage temperature -55~150 ??
jmnic product specification 2 silicon npn power transistors 2SC1905 characteristics tj=25 ?? unless otherwise specified symbol parameter conditions min typ. max unit v (br)ceo collector-emitter breakdown voltage i c =5ma ; i b =0 300 v v (br)cbo collector-base breakdown voltage i c =100 | a ; i e =0 350 v v (br)ebo emitter-base breakdown voltage i e =100 | a ; i c =0 7.5 v v cesat collector-emitter saturation voltage i c =50ma; i b =5ma 1.0 v i cbo collector cut-off current v cb =200v ;i e =0 2 | a i ebo emitter cut-off current v eb =5v; i c =0 2 | a h fe dc current gain i c =10m a ; v ce =10v 40 250 f t transition frequency i c =10m a ; v ce =30v 50 mhz c ob output capacitance i e =0 ; v cb =50v; f=1mhz 4.5 pf t stg storage time i c =100ma; i b1 =10ma; i b2 =0 5 7.5 | s
jmnic product specification 3 silicon npn power transistors 2SC1905 package outline fig.2 outline dimensions (unindicated tolerance: ? 0.10 mm)

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