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| inchange semiconductor isc product specification isc silicon npn power transistor 2SC3910 description high speed switching high collector-base breakdown voltage- : v (br)ceo = 800v(min) good linearity of h fe applications designed for high speed switching applications absolute maximum ratings(t a =25 ) symbol parameter value unit v cbo collector-base voltage 800 v v ceo collector-emitter voltage 500 v v ebo emitter-base voltage 7 v i c collector current-continuous 15 a i cm collector current-peak 30 a i b b base current-continuous 5 a collector power dissipation @ t c =25 150 p c collector power dissipation @ t a =25 3.5 w t j junction temperature 150 t stg storage temperature range -55~150 isc website www.iscsemi.cn
inchange semiconductor isc product specification isc silicon npn power transistor 2SC3910 electrical characteristics t c =25 unless otherwise specified symbol parameter conditions min typ. max unit v ceo(sus) collector-emitter sustaining voltage i c = 0.5a ;l= 25mh 500 v v ce (sat) collector-emitter saturation voltage i c = 8.0a; i b = 1.6a 1.0 v v be (sat) base-emitter saturation voltage i c = 8.0a; i b = 1.6a 1.5 v i cbo collector cutoff current v cb = 800v ; i e = 0 100 a i ebo emitter cutoff current v eb = 7v; i c = 0 100 a h fe-1 dc current gain i c = 0.1a ; v ce = 5v 15 h fe-2 dc current gain i c = 8a ; v ce = 5v 10 f t current-gain?bandwidth product i c = 0.5a;v ce = 10v;f= 0.5mhz 2 mhz switching times t on turn-on time 1.0 s t stg storage time 3.0 s t f fall time i c = 8a ;i b1 = 1.6a; i b2 = -1.6a; v cc = 200v 1.0 s isc website www.iscsemi.cn 2 |
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