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| inchange semiconductor isc product specification isc silicon npn darlington power transistor 2SD1608 description collector-emitter sustaining voltage- : v ceo(sus) = 120v(min) high dc current gain : h fe = 1000(min) @i c = 4a high speed switching applications designed for medium speed powe r switching applications. absolute maximum ratings(t a =25 ) symbol parameter value unit v cbo collector-base voltage 120 v v ceo collector-emitter voltage 120 v v ebo emitter-base voltage 7 v i c collector current-continuous 8 a i cp collector current-peak 12 a collector power dissipation @ t a =25 2 p c collector power dissipation @ t c =25 50 w t j junction temperature 150 t stg storage temperature range -55~150 isc website www.iscsemi.cn
inchange semiconductor isc product specification isc silicon npn darlington power transistor 2SD1608 electrical characteristics t c =25 unless otherwise specified symbol parameter conditions min typ. max unit v ceo(sus) collector-emitter sustaining voltage i c = 2a; l= 10mh 120 v v ce( sat )-1 collector-emitter saturation voltage i c = 4a; i b = 8ma b 1.5 v v ce( sat )-2 collector-emitter saturation voltage i c = 8a; i b = 80ma b 3.0 v v be( sat )-1 base-emitter saturation voltage i c = 4a; i b = 8ma b 2.0 v v be( sat )-2 base-emitter saturation voltage i c = 8a; i b = 80ma b 3.5 v i cbo collector cutoff current v cb = 120v; i e = 0 100 a i ceo collector cutoff current v ce = 100v; i b = 0 10 a h fe dc current gain i c = 4a; v ce = 3v 1000 20000 switching times t on turn-on time 0.7 s t stg storage time 6.0 s t f fall time i c = 4a, i b1 = -i b2 = 8ma 2.0 s isc website www.iscsemi.cn 2 |
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