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inchange semiconductor product specification silicon npn power transistors 2SD1633 description ? ? with to-220fa package ? darlington ? high speed switching ? good linearity of h fe applications ?power switching applications pinning pin description 1 base 2 collector 3 emitter absolute maximum ratings(ta=25 ?? ) symbol parameter conditions value unit v cbo collector-base voltage open emitter 100 v v ceo collector-emitter voltage open base 100 v v ebo emitter-base voltage open collector 7 v i c collector current (dc) 5 a i cm collector current-peak 8 a i b base current (dc) 0.5 a t a =25 ?? 2 p c collector power dissipation t c =25 ?? 30 w t j junction temperature 150 ?? t stg storage temperature -55~150 ??
inchange semiconductor product specification 2 silicon npn power transistors 2SD1633 characteristics tj=25 ?? unless otherwise specified symbol parameter conditions min typ. max unit v ceo(sus) collector-emitter sustaining voltage i c =0.2a , i b =0 100 v v cesat collector-emitter saturation voltage i c =3a; i b =3ma 1.5 v v besat base-emitter saturation voltage i c =3a; i b =3ma 2.0 v i cbo collector cut-off current v cb =100v;i e =0 100 | a i ceo collector cut-off current v ce =100v; i b =0 100 | a i ebo emitter cut-off current v eb =7v; i c =0 5 ma h fe dc current gain i c =3a ; v ce =3v 1500 10000 switching times t on turn-on time 3.0 | s t s storage time 5.0 | s t f fall time i c =3a ;i b1 =3ma i b2 =-3ma; v cc =50v 3.0 | s ? h fe classifications q p 1500-6000 5000-10000
inchange semiconductor product specification 3 silicon npn power transistors 2SD1633 package outline fig.2 outline dimensions (unindicated tolerance: ? 0.15 mm)

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