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4v drive nch + pch mosfet QS8M13 ? structure silicon n-channel mosfet/ silicon p-channel mosfet ? features 1) low on-resistance. 2) high power package(tsmt8). 3) low voltage drive(4v drive). ? application switching ? packaging specifications package taping code tcr basic ordering unit (pieces) 3000 QS8M13 ? ? absolute maximum ratings (ta = 25 ? c) tr1 : n-ch tr2 : p-ch drain-source voltage v dss 30 ? 30 v gate-source voltage v gss ? 20 ? 20 v continuous i d ? 6 ? 5a pulsed i dp ? 18 ? 18 a continuous i s 1.0 ? 1.0 a pulsed i sp 18 ? 18 a w / total w / element channel temperature tch ? c range of storage temperature tstg ? c *1 pw ? 10 ? s, duty cycle ? 1% *2 mounted on a ceramic board. type source current (body diode) drain current parameter power dissipation p d symbol 1.5 ? 55 to ? 150 unit limits 1.25 150 (1) tr1 source (2) tr1 gate (3) tr2 source (4) tr2 gate (5) tr2 drain (6) tr2 drain (7) tr1 drain (8) tr1 drain ?1 esd protection diode ?2 body diode tsmt8 (8) (7) (5)(6) (1) (2) (4)(3) *1 *1 *2 abbreviated symbol : m13 ?dimensions (unit : mm) ?inner circuit ?2 ?1 (8) (7) (1) (2) ?2 ?1 (6) (5) (3) (4) 1/10 2011.05 - rev.a data sheet www.rohm.com ? 2011 rohm co., ltd. all rights reserved.
QS8M13 ? electrical characteristics (ta = 25 ? c) QS8M13 ? electrical characteristics (ta = 25 ? c) QS8M13 ? electrical characteristic curves (ta=25 ? c) tr.1(nch) 0 1 2 3 4 5 6 0 0.2 0.4 0.6 0.8 1 drain current : i d [a] drain - source voltage : v ds [v] fig.1 typical output characteristics ( ) v gs =10.0v v gs =4.0v v gs =4.5v v gs =3.0v v gs =2.0v v gs =2.8v v gs =2.5v t a =25 pulsed 0 1 2 3 4 5 6 0 2 4 6 8 10 drain current : i d [a] drain - source voltage : v ds [v] fig.2 typical output characteristics ( ) v gs =2.0v v gs =10.0v v gs =4.0v v gs =4.5v v gs =2.5v v gs =2.8v t a =25 pulsed 1 10 100 1000 0.01 0.1 1 10 100 static drain - source on - state resistance r ds(on) [m ] drain current : i d [a] fig.3 static drain - source on - state resistance vs. drain current v gs =4.0v v gs =4.5v v gs =10v t a =25 pulsed 1 10 100 1000 0.01 0.1 1 10 static drain - source on - state resistance r ds(on) [m ] drain current : i d [a] fig.4 static drain - source on - state resistance vs. drain current v gs =10v pulsed t a = 125 t a = 75 c t a = 25 c t a = - 25 c 1 10 100 1000 0.01 0.1 1 10 static drain - source on - state resistance r ds(on) [m ] drain current : i d [a] fig.5 static drain - source on - state resistance vs. drain current v gs =4.5v pulsed t a = 125 t a = 75 c t a = 25 c t a = - 25 c 1 10 100 1000 0.01 0.1 1 10 static drain - source on - state resistance r ds(on) [m ] drain current : i d [a] fig.6 static drain - source on - state resistance vs. drain current v gs =4v pulsed t a = 125 t a = 75 c t a = 25 c t a = - 25 c 4/10 2011.05 - rev.a www.rohm.com ? 2011 rohm co., ltd. all rights reserved. data sheet QS8M13 0.01 0.1 1 10 0.001 0.01 0.1 1 10 forward transfer admittance y fs [s] drain current : i d [a] fig.7 forward transfer admittance vs. drain current v ds =10v pulsed t a = 125 t a = 75 c t a = 25 c t a = - 25 c 0.001 0.01 0.1 1 10 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 drain currnt : i d [a] gate - source voltage : v gs [v] fig.8 typical transfer characteristics v ds =10v pulsed t a = 125 t a = 75 c t a = 25 c t a = - 25 c 0.01 0.1 1 10 0.0 0.5 1.0 1.5 2.0 source current : i s [a] source - drain voltage : v sd [v] fig.9 source current vs. source - drain voltage v gs =0v pulsed t a = 125 t a = 75 c t a = 25 c t a = - 25 c 0 20 40 60 80 100 0 2 4 6 8 10 static drain - source on - state resistance r ds(on) [m ] gate - source voltage : v gs [v] fig.10 static drain - source on - state resistance vs. gate - source voltage i d =6.0a i d =3.0a t a =25 pulsed 1 10 100 1000 0.01 0.1 1 10 switching time : t [ns] drain current : i d [a] fig.11 switching characteristics t d(on) t r t d(off) t f v dd P 15v v gs =10v r g =10 t a =25 c pulsed 0 2 4 6 8 10 0 2 4 6 8 10 gate - source voltage : v gs [v] total gate charge : q g [nc] fig.12 dynamic input characteristics t a =25 c v dd =15v i d =6a pulsed 5/10 2011.05 - rev.a www.rohm.com ? 2011 rohm co., ltd. all rights reserved. data sheet QS8M13 10 100 1000 10000 0.01 0.1 1 10 100 capacitance : c [pf] drain - source voltage : v ds [v] fig.13 typical capacitance vs. drain - source voltage t a =25 c f=1mhz v gs =0v c iss c oss c rss 0.01 0.1 1 10 100 0.1 1 10 100 drain current : i d [ a ] drain - source voltage : v ds [ v ] fig.14 maximum safe operating area t a =25 c single pulse : 1unit mounted on a ceramic board. (30mm 30mm 0.8mm) operation in this area is limited by r ds(on) (v gs = 10v) p w = 100 s p w = 1ms p w = 10ms dc operation 0.001 0.01 0.1 1 10 0.0001 0.001 0.01 0.1 1 10 100 1000 normalized transient thermal resistance : r t pulse width : pw (s) fig.15 normalized transient thermal resistance v.s. pulse width t a =25 c single pulse : 1unit mounted on a ceramic board. 30mm 30mm 0.8mm) rth (ch - a) =100 c /w rth (ch - a) (t)=r(t) rth (ch - a) 6/10 2011.05 - rev.a www.rohm.com ? 2011 rohm co., ltd. all rights reserved. data sheet QS8M13 tr.2(pch) 0 1 2 3 4 5 0 0.2 0.4 0.6 0.8 1 drain current : - i d [a] drain - source voltage : - v ds [v] fig.1 typical output characteristics ( ) v gs = - 2.5v v gs = - 10.0v v gs = - 4.0v v gs = - 4.5v v gs = - 2.8v v gs = - 3.0v t a =25 c pulsed 0 1 2 3 4 5 0 2 4 6 8 10 drain current : - i d [a] drain - source voltage : - v ds [v] fig.2 typical output characteristics ( ) v gs = - 2.5v v gs = - 10.0v v gs = - 4.0v v gs = - 4.5v v gs = - 2.8v v gs = - 3.0v t a =25 c pulsed 1 10 100 1000 0.01 0.1 1 10 100 static drain - source on - state resistance r ds(on) [m ] drain current : - i d [a] fig.3 static drain - source on - state resistance vs. drain current v gs = - 4.0v v gs = - 4.5v v gs = - 10v t a =25 c pulsed 1 10 100 1000 0.01 0.1 1 10 100 static drain - source on - state resistance r ds(on) [m ] drain current : - i d [a] fig.4 static drain - source on - state resistance vs. drain current v gs = - 10v pulsed t a = 125 c t a = 75 c t a = 25 c t a = - 25 c 1 10 100 1000 0.01 0.1 1 10 100 static drain - source on - state resistance r ds(on) [m ] drain current : - i d [a] fig.5 static drain - source on - state resistance vs. drain current v gs = - 4.5v pulsed t a = 125 c t a = 75 c t a = 25 c t a = - 25 c 1 10 100 1000 0.01 0.1 1 10 100 static drain - source on - state resistance r ds(on) [m ] drain current : - i d [a] fig.6 static drain - source on - state resistance vs. drain current v gs = - 4v pulsed t a = 125 c t a = 75 c t a = 25 c t a = - 25 c 7/10 2011.05 - rev.a www.rohm.com ? 2011 rohm co., ltd. all rights reserved. data sheet QS8M13 0.01 0.1 1 10 100 0.01 0.1 1 10 forward transfer admittance y fs [s] drain current : - i d [a] fig.7 forward transfer admittance vs. drain current v ds = - 10v pulsed t a = 125 c t a = 75 c t a = 25 c t a = - 25 c 0.001 0.01 0.1 1 10 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 drain currnt : - i d [a] gate - source voltage : - v gs [v] fig.8 typical transfer characteristics v ds = - 10v pulsed t a = 125 c t a = 75 c t a = 25 c t a = - 25 c 0.01 0.1 1 10 0.0 0.5 1.0 1.5 2.0 source current : - i s [a] source - drain voltage : - v sd [v] fig.9 source current vs. source - drain voltage v gs =0v pulsed t a = 125 c t a = 75 c t a = 25 c t a = - 25 c 0 20 40 60 80 100 0 2 4 6 8 10 static drain - source on - state resistance r ds(on) [m ] gate - source voltage : - v gs [v] fig.10 static drain - source on - state resistance vs. gate - source voltage i d = - 5.0a i d = - 2.5a t a =25 c pulsed 1 10 100 1000 0.01 0.1 1 10 switching time : t [ns] drain current : - i d [a] fig.11 switching characteristics t d(on) t r t d(off) t f v dd P - 15v v gs = - 10v r g =10 t a =25 c pulsed 0 2 4 6 8 10 0 5 10 15 20 gate - source voltage : - v gs [v] total gate charge : q g [nc] fig.12 dynamic input characteristics t a =25 c v dd = - 15v i d = - 5a pulsed 8/10 2011.05 - rev.a www.rohm.com ? 2011 rohm co., ltd. all rights reserved. data sheet QS8M13 10 100 1000 10000 0.01 0.1 1 10 100 capacitance : c [pf] drain - source voltage : - v ds [v] fig.13 typical capacitance vs. drain - source voltage t a =25 c f=1mhz v gs =0v c iss c oss c rss 0.01 0.1 1 10 100 0.1 1 10 100 drain current : - i d [ a ] drain - source voltage : - v ds [ v ] fig.14 maximum safe operating area t a =25 c single pulse : 1unit mounted on a ceramic board. (30mm 30mm 0.8mm) operation in this area is limited by r ds(on) (v gs = - 10v) p w = 100 s p w = 1ms p w = 10ms dc operation 0.001 0.01 0.1 1 10 0.0001 0.001 0.01 0.1 1 10 100 1000 normalized transient thermal resistance : r t pulse width : pw (s) fig.15 normalized transient thermal resistance v.s. pulse width t a =25 c single pulse : 1unit mounted on a ceramic board. (30mm 30mm 0.8mm) rth (ch - a) =100 c /w rth (ch - a) (t)=r(t) rth (ch - a) 9/10 2011.05 - rev.a www.rohm.com ? 2011 rohm co., ltd. all rights reserved. data sheet QS8M13 ? measurement circuits r 1 120 a ww w .rohm.com ? 20 1 1 rohm co., ltd. all rights reserved. notice rohm customer support system http://ww w . r ohm.com/contact/ thank you for your accessing to rohm p r oduct informations. mo r e detail p r oduct informations and catalogs a r e available, please contact us. notes |
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