10v drive nch mosfet R6046FNZ ? structure ? dimensions (unit : mm) silicon n-channel mosfet ? features 1) low on-resistance. 2) low input capacitance. 3) high esd. ? application switching ? packaging specifications ? inner circuit package bulk code - basic ordering unit (pieces) 360 R6046FNZ ? ? absolute maximum ratings (ta = 25 ? c) symbol limits unit drain-source voltage v dss 600 v gate-source voltage v gss ? 30 v continuous i d ? 46 a pulsed i dp ? 115 a continuous i s 46 a pulsed i sp 115 a avalanche current i as 23 a avalanche energy e as 142 mj power dissipation p d 120 w channel temperature t ch 150 ? c range of storage temperature t stg ? 55 to ? 150 ? c *1 pw ? 10 ? s, duty cycle ? 1% *2 l 500 ? h, v dd =50v, r g =25 ? , t ch =25c *3 limited only by maximum channel temperature allowed. *4 t c =25c ? thermal resistance symbol limits unit channel to case r th (ch-c) 1.04 ? c / w parameter type source current (body diode) drain current parameter *1 *1 (1) gate (2) drain (3) source ? 1 body diode *2 *2 *3 *4 *3 15.5 3.6 5.5 3.0 2.0 3.0 0.9 5.45 5.45 0.75 2.0 4.5 2.0 14.5 16.5 26.5 2.5 14.8 0.44 16.5 3.5 10.0 to-3pf (1) (2) (3) (1) (3) (2) ?1 (1) gate (2) drain (3) source 1/6 2011.10 - rev.a data sheet www.rohm.com ? 2011 rohm co., ltd. all rights reserved.
R6046FNZ ? electrical characteristics (ta = 25 ? c) symbol min. typ. max. unit gate-source leakage i gss -- ? 100 na v gs = ? 30v, v ds =0v drain-source breakdown voltage v (br)dss 600 - - v i d =1ma, v gs =0v zero gate voltage drain current i dss - - 100 ? av ds =600v, v gs =0v gate threshold voltage v gs (th) 3.0 - 5.0 v v ds =10v, i d =1ma forward transfer admittance l y fs l21 35 - sv ds =10v, i d =23a input capacitance c iss - 6100 - pf v ds =25v output capacitance c oss - 3600 - pf v gs =0v reverse transfer capacitance c rss - 90 - pf f=1mhz turn-on delay time t d(on) - 77 - ns v dd 300v, i d =23a rise time t r - 150 - ns v gs =10v turn-off delay time t d(off) - 230 - ns r l =13.04 ? fall time t f - 80 - ns r g =10 ? total gate charge q g - 150 - nc v dd 300v gate-source charge q gs - 40 - nc i d =46a gate-drain charge q gd - 60 - nc v gs =10v *pulsed ? body diode characteristics (source-drain) symbol min. typ. max. unit forward voltage v sd - - 1.5 v i s =12.5a, v gs =0v reverse recovery time t rr - 145 - ns i s =46a, di/dt=100a/s *pulsed parameter conditions conditions m ? parameter static drain-source on-state resistance r ds (on) i d =23a, v gs =10v -7593 * * * * * * * * * * * 2/6 2011.10 - rev.a www.rohm.com ? 2011 rohm co., ltd. all rights reserved. data sheet
R6046FNZ ? electrical characteristic curves (ta=25 ? c) 0 2 4 6 8 10 12 14 16 18 20 22 24 0 1 2 3 4 5 6 7 8 9 10 drain current : i d [a] drain - source voltage : v ds [v] fig.1 typical output characteristics ( ) v gs = 10.0 v v gs =6.0v v gs =5.0v v gs =8.0v v gs =6.5v t a =25 c pulsed 0 10 20 30 40 0 2 4 6 8 10 drain current : i d [a] drain - source voltage : v ds [v] fig.2 typical output characteristics ( ) v gs =10.0v v gs =6.0v v gs =5.0v v gs =6.5v v gs =8.0v t a =25 c pulsed 0.001 0.01 0.1 1 10 100 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 drain currnt : i d [a] gate - source voltage : v gs [v] fig.3 typical transfer characteristics v ds =10v pulsed t a =125 c t a =75 c t a =25 c t a = - 25 c 2 3 4 5 6 -50 0 50 100 150 gate threshold voltage : v gs(th) [v] channel temperature : t ch [ ] fig.4 gate threshold voltage vs. channel temperature v ds =10v i d =1ma pulsed 10 100 1000 0.01 0.1 1 10 100 static drain - source on - state resistance r ds(on) [m ] drain current : i d [a] fig.5 static drain - source on - state resistance vs. drain current v gs =10v pulsed t a =125 c t a =75 c t a =25 c t a = - 25 c 0 20 40 60 80 100 120 140 160 180 200 -50 0 50 100 150 static drain - source on - state resistance : r ds(on) [m ] channel temperature : t ch [ ] fig.6 static drain - source on - state resistance vs. channel temperature v gs =10v pulsed i d =23a i d =46a 3/6 2011.10 - rev.a www.rohm.com ? 2011 rohm co., ltd. all rights reserved. data sheet
R6046FNZ 0.01 0.1 1 10 100 0.01 0.1 1 10 100 forward transfer admittance y fs [s] drain current : i d [a] fig.7 forward transfer admittance vs. drain current v ds =10v pulsed t a =125 c t a =75 c t a =25 c t a = - 25 c 0.01 0.1 1 10 100 0.0 0.5 1.0 1.5 2.0 source current : is [a] source - drain voltage : v sd [v] fig.8 source current vs. source - drain voltage v gs =0v pulsed t a =125 c t a =75 c t a =25 c t a = - 25 c 0 10 20 30 40 50 60 70 80 90 100 110 120 130 140 150 0 2 4 6 8 10 12 14 16 18 20 static drain - source on - state resistance r ds(on) [m ] gate - source voltage : v gs [v] fig.9 static drain - source on - state resistance vs. gate - source voltage i d =23a i d =46a t a =25 c pulsed 1 10 100 1000 10000 100000 0.01 0.1 1 10 100 switching time : t [ns] drain current : i d [a] fig.10 switching characteristics t d(on) t r t d(off) t f v dd P 300v v gs =10v r g =10 t a =25 c pulsed 0 2 4 6 8 10 12 0 20 40 60 80 100 120 140 160 180 gate - source voltage : v gs [v] total gate charge : q g [nc] fig.11 dynamic input characteristics t a =25 c v dd =300v i d =46a pulsed 1 10 100 1000 10000 100000 0.01 0.1 1 10 100 1000 capacitance : c [pf] drain - source voltage : v ds [v] fig.12 typical capacitance vs. drain - source voltage t a =25 c f=1mhz v gs =0v c iss c oss c rss 4/6 2011.10 - rev.a www.rohm.com ? 2011 rohm co., ltd. all rights reserved. data sheet
R6046FNZ 10 100 1000 0 1 10 100 reverse recovery time : t rr [ns] source current : i s [a] fig.13 reverse recovery time vs. source current t a =25 c v gs =0v di/dt=100a/s pulsed 5/6 2011.10 - rev.a www.rohm.com ? 2011 rohm co., ltd. all rights reserved. data sheet
R6046FNZ ? measurement circuits f ig.1-1 switching time measurement circu it v gs r g v ds d.u.t. i d r l v dd fig.1-2 switching waveforms 90% 90% 90 % 10% 10% 50% 10% 50% v gs pulse width v ds t on t off t r t d(on) t f t d(off) fig.2-2 gate charge waveform v g v gs charge q g q gs q gd fig.3-1 avalanche measurement circuit v gs r g v ds d.u.t. i as l v dd fig.3-2 avalanche waveform i as v dd v (br)dss i as 2 l e as = v (br)dss - v dd v (br)dss 1 2 f ig.2-1 gate charge measurement circuit v gs i g(const.) r g v d s d.u.t. i d r l v dd 6/6 2011.10 - rev.a www.rohm.com ? 2011 rohm co., ltd. all rights reserved. data sheet
r 1 120 a ww w .rohm.com ? 20 1 1 rohm co., ltd. all rights reserved. notice rohm customer support system http://ww w . r ohm.com/contact/ thank you for your accessing to rohm p r oduct informations. mo r e detail p r oduct informations and catalogs a r e available, please contact us. notes
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