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| savantic semiconductor product specification silicon npn power transistors BD743/a/b/c description with to-220c package complement to type bd744/a/b/c high current capability high power dissipation applications for use in power linear and switching applications pinning pin description 1 base 2 collector;connected to mounting base 3 emitter absolute maximum ratings (ta=25 ) symbol parameter conditions value unit BD743 50 BD743a 70 BD743b 90 v cbo collector-base voltage BD743c open emitter 110 v BD743 45 BD743a 60 BD743b 80 v ceo collector-emitter voltage BD743c open base 100 v v ebo emitter-base voltage open collector 5 v i c collector current 15 a i cm collector current-peak 20 a i b base current 5 a t c =25 90 p c collector power dissipation t a =25 2 w t j junction temperature 150 t stg storage temperature -65~150
savantic semiconductor product specification 2 silicon npn power transistors BD743/a/b/c characteristics tj=25 unless otherwise specified symbol parameter conditions min typ. max unit BD743 45 BD743a 60 BD743b 80 v (br)ceo collector-emitter breakdown voltage BD743c i c =30ma; i b =0 100 v v cesat-1 collector-emitter saturation voltage i c =5 a;i b =0.5 a 1.0 v v cesat-2 collector-emitter saturation voltage i c =15 a;i b =5 a 3.0 v v be -1 base-emitter on voltage i c =5a ; v ce =4v 1.0 v v be -2 base-emitter on voltage i c =15a ; v ce =4v 3.0 v BD743/a v ce =30v; i b =0 i ceo collector cut-off current BD743b/c v ce =60v; i b =0 0.1 ma BD743 v ce =50v; v be =0 t c =125 0.1 5.0 BD743a v ce =70v; v be =0 t c =125 0.1 5.0 BD743b v ce =90v; v be =0 t c =125 0.1 5.0 i cbo collector cut-off current BD743c v ce =110v; v be =0 t c =125 0.1 5.0 ma i ebo emitter cut-off current v eb =5v; i c =0 0.5 ma h fe-1 dc current gain i c =1a ; v ce =4v 40 h fe-2 dc current gain i c =5a ; v ce =4v 20 150 h fe-3 dc current gain i c =15a ; v ce =4v 5 switching times resistive load t d delay time 0.02 s t r rise time 0.35 s t s storage time 0.5 s t f fall time i c =5 a;i b1 =-i b2 =0.5 a v be(off) =-4.2v; r l =6 @ t p =20s 0.4 s thermal characteristics symbol parameter max unit r th j-c thermal resistance junction to case 1.40 /w savantic semiconductor product specification 3 silicon npn power transistors BD743/a/b/c package outline fig.2 outline dimensions (unindicated tolerance: 0.10 mm) |
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