process CP701 small signal transistors pnp - high voltage transistor chip princip al device types cmpt6520 cmpta92 cxta92 czta92 mpsa92 process epitaxial planar die size 26 x 26 mils die thickness 9.0 mils base bonding pad area 6.1 x 4.9 mils emitter bonding pad area 5.2 x 5.2 mils top side metalization al - 30,000? back side metalization au - 18,000? process details 145 adams avenue hauppauge, ny 11788 usa tel: (631) 435-1110 fax: (631) 435-1824 www.centralsemi.com geometry backside collector r1 (27- november 2001) gross die per 4 inch w afer 16,880
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