3.3a 1 UM0204 dual n-ch 100v fast switching mosfets symbol parameter rating units v ds drain-source voltage 100 v v gs gate-sou r ce voltage 20 v i d @t a =25 continuous drain current, v gs @ 10v 1 3.3 a i d @t a =70 continuous drain current, v gs @ 10v 1 2.7 a i dm pulsed drain current 2 17 a eas single pulse avalanche energy 3 10 mj i as avalanche current 14 a p d @t a =25 total power dissipation 4 2.0 w t stg storage temperature range -55 to 150 t j operating junction temperature range -55 to 150 symbol parameter typ. max. unit r ja thermal resistance junction-ambient 1 --- 62.5 /w r jc thermal resistance junction-case 1 --- 40 /w bvdss rdson id 100v 80m the UM0204 is the highest performance trench n-ch mosfets with extreme high cell density , which provide excellent rdson and gate charge for most of the synchronous buck converter applications . the UM0204 meet the rohs and green product requirement , 100% eas guaranteed with full function reliability approved. z advanced high cell density trench technology z super low gate charge z excellent cdv/dt effect decline z 100% eas guaranteed z green device available general description features applications z high frequency point-of-load synchronous buck converter for mb/nb/umpc/vga z networking dc-dc power system z load switch absolute maximum ratings thermal data sop8 pin configuration product summery
2 dual n-ch 100v fast switching mosfets symbol parameter conditions min. typ. max. unit bv dss drain-source breakdown voltage v gs =0v , i d =250ua 100 --- --- v bv dss / t j bvdss temperature coefficient reference to 25 , i d =1ma --- 0.044 --- v/ r ds(on) static drain-source on-resistance 2 v gs =10v , i d =4a --- 63.5 80 m v gs =4.5v , i d =3a --- 70 91 v gs(th) gate threshold voltage v gs =v ds , i d =250ua 1.6 2.2 2.7 v v gs(th) v gs(th) temperature coefficient --- --- --- mv/ i dss drain-source leakage current v ds =48v , v gs =0v , t j =25 --- --- 1 ua v ds =48v , v gs =0v , t j =55 --- --- 5 i gss gate-source leakage current v gs = 20v , v ds =0v --- --- 100 na gfs forward transconductance v ds =5v , i d =3a --- 20 --- s r g gate resistance v ds =0v , v gs =0v , f=1mhz 0.7 1.45 2.2 q g total gate charge (10v) v ds =50v , v gs =10v , i d =3a 13 16.3 20 nc q gs gate-source charge 2.2 2.8 3.4 q gd gate-drain charge 2.4 4.1 5.8 t d(on) turn-on delay time v dd =50v , v gs =10v , r g =3 --- 6 --- ns t r rise time --- 2.5 --- t d(off) turn-off delay time --- 21 --- t f fall time --- 2.4 --- c iss input capacitance v ds =15v , v gs =0v , f=1mhz 620 778 974 pf c oss output capacitance 38 55 81 c rss reverse transfer capacitance 13 24 35 symbol parameter conditions min. typ. max. unit eas single pulse avalanche energy 5 v dd =25v , l=0.1mh , i as =15a 15.4 --- --- mj symbol parameter conditions min. typ. max. unit i s continuous source current 1,6 v g =v d =0v , force current --- --- 2.5 a note : 1.the data tested by surface mounted on a 1 inch 2 fr-4 board with 2oz copper. 2.the data tested by pulsed , pulse width Q 300us , duty cycle Q 2% 3.the eas data shows max. rating . the test condition is v dd =25v,v gs =10v,l=0.1mh,i as =21a 4.the power dissipation is limited by 150 junction temperature 5.the min. value is 100% eas tested guarantee. 6.the data is theoretically the same as i d and i dm , in real applications , should be limited by total power dissipation. electrical characteristics (t j =25 , unless otherwise noted) diode characteristics guaranteed avalanche characteristics UM0204
3 dual n-ch 100v fast switching mosfets 0 5 10 15 20 00.511.522.5 v ds , drain-to-source voltage (v) i d drain current (a) v gs =10v v gs =7v v gs =5v v gs =4.5v v gs =3v 30 38 45 53 60 246810 v gs (v) r dson (m ? ) i d =4a 0 2 4 6 8 10 00.30.60.9 v sd , source-to-drain voltage (v) i s - source current(a) t j =150 t j =25 0.2 0.6 1 1.4 1.8 -50 0 50 100 150 t j ,junction temperature ( ) normalized v gs(th) 0.2 0.6 1.0 1.4 1.8 2.2 -50 0 50 100 150 t j , junction temperature ( ) normalized on resistanc e typical characteristics fig.1 typical output characteristics fig.2 on-resistance vs. gate-source fig.3 forward characteristics of reverse fig.4 gate-charge characteristics fig.5 normalized v gs(th) vs. t j fig.6 normalized r dson vs. t j UM0204
4 dual n-ch 100v fast switching mosfets 10 100 1000 10000 15913172125 v ds drain to source voltage(v) capacitance(pf) f=1.0mhz ciss coss crss 0.001 0.01 0.1 1 0.0001 0.001 0.01 0.1 1 10 100 1000 t , pulse width (s) normalized thermal response (r ja ) 0.01 0.05 0.1 0.2 duty=0.5 single p dm d = t on /t t jpeak = t a +p dm xr ja t on t fig.8 safe operating area fig.9 normalized maximum transient thermal impedance fig.7 capacitance fig.10 switching time waveform fig.11 unclamped inductive switching waveform UM0204
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