composite transistors 1 publication date: may 2002 sjj00236aed XP03390 silicon npn epitaxial planar transistor (tr1) silicon pnp epitaxial planar transistor (tr2) for digital circuits features ? two elements incorporated into one package (transistors with built-in resistor) ? reduction of the mounting area and assembly cost by one half basic part number of element ? unr1213 (un1213) + unr1114 (un1114) absolute maximum ratings t a = 25 c marking symbol: ex internal connection unit: mm 1: emitter (tr1) 4: collector (tr2) 2: base (tr1) 5: collector (tr1) 3: emitter (tr2) : base (tr2) eiaj: sc-88a smini5-g1 package 2.1 0.1 0.9 +0.2 ?0.1 0.9 0.1 0 to 0.1 1.25 0.10 1 3 2 0.20 0.05 (0.425) 1.3 0.1 2.0 0.1 54 (0.65) (0.65) 0.2 0.1 0.12 +0.05 ?0.02 5? 10? parameter symbol rating unit collector to base voltage v cbo 50 v tr1 collector to emitter voltage v ceo 50 v collector current i c 100 ma collector to base voltage v cbo ? 50 v tr2 collector to emitter voltage v ceo ? 50 v collector current i c ? 100 ma total power dissipation p t 150 mw total junction temperature t j 150 c storage temperature t stg ? 55 to + 150 c parameter symbol conditions min typ max unit collector to base voltage v cbo i c = 10 a, i e = 050 v collector to emitter voltage v ceo i c = 2 ma, i b = 050v collector cutoff current i cbo v cb = 50 v, i e = 0 0.1 a i ceo v ce = 50 v, i b = 0 0.5 emitter cutoff current i ebo v eb = 6 v, i c = 0 0.1 ma dc current gain h fe v ce = 10 v, i c = 5 ma 80 collector to emitter saturation voltage v ce(sat) i c = 10 ma, i b = 0.3 ma 0.25 v high-level output voltage v oh v cc = 5 v, v b = 0.5 v, r l = 1 k ? 4.9 v low-level output voltage v ol v cc = 5 v, v b = 3.5 v, r l = 1 k ? 0.2 v input resistance r 1 ? 30% 47 + 30% k ? resistance ratio r 1 /r 2 0.8 1.0 1.2 gain bandwidth product f t v cb = 10 v, i e = ? 2 ma, f = 200mhz 150 mhz electrical characteristics t a = 25 c 3 c ? tr1 1 tr2 tr1 23 4 5 note) the part number in the parenthesis shows conventional part number.
XP03390 2 sjj00236aed common characterisitcs chart p t ? t a electrical characteristics (continued) t a = 25 c 3 c ? tr2 parameter symbol conditions min typ max unit collector to base voltage v cbo i c = ? 10 a, i e = 0 ? 50 v collector to emitter voltage v ceo i c = ? 2 ma, i b = 0 ? 50 v collector cutoff current i cbo v cb = ? 50 v, i e = 0 ? 0.1 a i ceo v ce = ? 50 v, i b = 0 ? 0.5 emitter cutoff current i ebo v eb = ? 6 v, i c = 0 ? 0.2 ma dc current gain h fe v ce = ? 10 v, i c = ? 5 ma 80 collector to emitter saturation voltage v ce(sat) i c = ? 10 ma, i b = ? 0.3 ma ? 0.25 v high-level output voltage v oh v cc = ? 5 v, v b = ? 0.5 v, r l = 1 k ?? 4.9 v low-level output voltage v ol v cc = ? 5 v, v b = ? 2.5 v, r l = 1 k ?? 0.2 v input resistance r 1 ? 30% 10 + 30% k ? resistance ratio r 1 /r 2 0.17 0.21 0.25 gain bandwidth product f t v cb = ? 10 v, i e = 1 ma, f = 200mhz 80 mhz 175 150 75 100 125 50 25 0 04060 20 80 100 120 140 160 ambient temperature t a ( c ) total power dissipation p t ( mw ) characterisitcs chart of tr1 i c ? v ce v ce(sat) ? i c h fe ? i c 0 012 210 48 6 140 120 100 80 60 40 20 collector to emitter voltage v ce ( v ) collector current i c ( ma ) t a = 25 c i b = 1.0 ma 0.1 ma 0.2 ma 0.3 ma 0.4 ma 0.5 ma 0.6 ma 0.7 ma 0.9 ma 0.8 ma 0.01 0.1 10 1 10 100 i c / i b = 10 0.1 1 t a = 75 c 25 c ? 25 c collector to emitter saturation voltage v ce(sat) ( v ) collector current i c ( ma ) 0 0.1 1 10 100 80 160 240 40 120 200 280 320 1 000 v ce = 10 v t a = 75 c 25 c ? 25 c dc current gain h fe collector current i c ( ma )
XP03390 3 sjj00236aed characterisitcs chart of tr2 c ob ? v cb i o ? v in v in ? i o i c ? v ce v ce(sat) ? i c h fe ? i c c ob ? v cb i o ? v in v in ? i o 1 0 102030 10 40 5152535 f = 1 mhz t a = 25 c collector output capacitance c ob ( pf ) collector to base voltage v cb ( v ) 0 ? 12 ? 2 ? 10 ? 4 ? 8 ? 6 0 ? 140 ? 20 ? 40 ? 60 ? 80 ? 100 ? 120 i b = ? 1.0 ma ? 0.2 ma ? 0.4 ma ? 0.5 ma t a = 25 c ? 0.3 ma ? 0.1 ma collector to emitter voltage v ce ( v ) collector current i c ( ma ) ? 0.6 ma ? 0.7 ma ? 0.8 ma ? 0.9 ma ? 0.01 ? 1 ? 0.1 ? 1 ? 10 ? 100 ? 1 000 i c / i b = 10 t a = 75 c 25 c ? 25?c collector to emitter saturation voltage v ce(sat) ( v ) collector current i c ( ma ) ? 0.1 ? 1 ? 10 ? 100 0 ? 0.5 ? 1 ? 1.5 ? 2 ? 2.5 v o = ? 5 v t a = 25 c output current i o (m a ) input voltage v in ( v ) ? 0.1 ? 0.1 ? 1 ? 100 ? 1 ? 10 ? 100 v o = ? 0.2 v t a = 25 c input voltage v in ( v ) output current i o ( ma ) ? 10 0.1 100 1 10 100 v o = 0.2 v t a = 25 c input voltage v in ( v ) output current i o ( ma ) 0.1 1 10 0 50 100 150 200 250 ? 1 ? 10 ? 100 300 ? 1 000 v ce = ? 10 v dc current gain h fe collector current i c ( ma ) t a = 75 c 25 c ? 25 c 024681012 v o = 5 v t a = 25 c output current i o (m a ) input voltage v in ( v ) 0.1 100 1 10 0 ? 10 ? 20 ?1 5 ? 35 ? 5 ? 25 ? 30 ? 40 1 0 1 3 f = 1 mhz t a = 25 c collector to base voltage v cb ( v ) collector output capacitance c ob ( pf )
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