? 2002 ixys all rights reserved symbol test conditions maximum ratings v dss t j = 25 c to 150 c 600 v v dgr t j = 25 c to 150 c; r gs = 1 m ? 600 v v gs continuous 20 v v gsm transient 30 v i d25 t c = 25 c26a i dm t c = 25 c, pulse width limited by t jm 104 a i ar t c = 25 c26a e ar t c = 25 c45mj e as t c = 25 c 1.5 j dv/dt i s i dm , di/dt 100 a/ s, v dd v dss , 5 v/ns t j 150 c, r g = 2 ? p d t c = 25 c 360 w t j -55 ... +150 c t jm 150 c t stg -55 ... +150 c t l 1.6 mm (0.063 in) from case for 10 s 300 c m d mounting torque to-264 0.9/6 nm/lb.in. weight plus-247 6 g to-264 10 g hiperfet tm power mosfets q-class n-channel enhancement mode avalanche rated, high dv/dt, low q g features z low gate charge z international standard packages z epoxy meet ul 94 v-0, flammability classification z low r ds (on) hdmos tm process z rugged polysilicon gate cell structure z avalanche energy and current rated z fast intrinsic rectifier advantages z easy to mount z space savings z high power density symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. v dss v gs = 0 v, i d = 250 a 600 v v gs(th) v ds = v gs , i d = 4 ma 2.5 4.5 v i gss v gs = 20 v dc , v ds = 0 200 na i dss v ds = v dss t j = 25 c25 a v gs = 0 v t j = 125 c1ma r ds(on) v gs = 10 v, i d = 0.5 ? i d25 0.25 ? pulse test, t 300 s, duty cycle d 2 % g = gate d = drain s = source tab = drain ds98919a(12/02) to-264 aa (ixfk) s g d d (tab) v dss = 600 v i d25 = 26 a r ds(on) = 0.25 ? ? ? ? ? t rr 250 ns ixfk 26n60q ixfx 26n60q plus 247 tm (ixfx) g d d (tab) preliminary data
ixys reserves the right to change limits, test conditions, and dimensions. ixys mosfets and igbts are covered by one or more of the following u.s. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728b1 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. g fs v ds = 10 v; i d = 0.5 ? i d25 , pulse test 14 22 s c iss 5100 pf c oss v gs = 0 v, v ds = 25 v, f = 1 mhz 560 pf c rss 210 pf t d(on) 30 ns t r v gs = 10 v, v ds = 0.5 ? v dss , i d = 0.5 ? i d25 32 ns t d(off) r g = 2.0 ? (external), 80 n s t f 16 ns q g(on) 150 200 nc q gs v gs = 10 v, v ds = 0.5 ? v dss , i d = 0.5 ? i d25 34 nc q gd 80 nc r thjc 0.35 k/w r thck to-264 0.15 k/w source-drain diode characteristic values (t j = 25 c, unless otherwise specified) symbol test conditions min. typ. max. i s v gs = 0 v 26 a i sm repetitive; pulse width limited by t jm 104 a v sd i f = i s , v gs = 0 v, 1.5 v pulse test, t 300 s, duty cycle d 2 % t rr 250 ns q rm 1 c i rm 1 0 a i f = i s -di/dt = 100 a/ s, v r = 100 v to-264 aa outline millimeter inches min. max. min. max. a 4.82 5.13 .190 .202 a1 2.54 2.89 .100 .114 a2 2.00 2.10 .079 .083 b 1.12 1.42 .044 .056 b1 2.39 2.69 .094 .106 b2 2.90 3.09 .114 .122 c 0.53 0.83 .021 .033 d 25.91 26.16 1.020 1.030 e 19.81 19.96 .780 .786 e 5.46 bsc .215 bsc j 0.00 0.25 .000 .010 k 0.00 0.25 .000 .010 l 20.32 20.83 .800 .820 l1 2.29 2.59 .090 .102 p 3.17 3.66 .125 .144 q 6.07 6.27 .239 .247 q1 8.38 8.69 .330 .342 r 3.81 4.32 .150 .170 r1 1.78 2.29 .070 .090 s 6.04 6.30 .238 .248 t 1.57 1.83 .062 .072 dim. ixfk 26n60q ixfx 26n60q dim. millimeter inches min. max. min. max. a 4.83 5.21 .190 .205 a 1 2.29 2.54 .090 .100 a 2 1.91 2.16 .075 .085 b 1.14 1.40 .045 .055 b 1 1.91 2.13 .075 .084 b 2 2.92 3.12 .115 .123 c 0.61 0.80 .024 .031 d 20.80 21.34 .819 .840 e 15.75 16.13 .620 .635 e 5.45 bsc .215 bsc l 19.81 20.32 .780 .800 l1 3.81 4.32 .150 .170 q 5.59 6.20 .220 0.244 r 4.32 4.83 .170 .190 terminals: 1 - gate 2 - drain (collector) 3 - source (emitter) 4 - drain (collector) plus 247 tm outline
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