(v gs = 10v) (v gs = 10v) (v gs = 4.5v) symbol v ds v gs i dm t j , t stg symbol typ max 34 40 66 80 r jl 20 25 i d = 10a r ds(on) < 19m ? 1.6 50 pulsed drain current c junction and storage temperature range -55 to 150 c 8 continuous drain current a 10 t a =25c i d thermal characteristics units maximum junction-to-ambient a t 10s c/w parameter r ja v v 20 gate-source voltage drain-source voltage 30 AON4420L maximum units parameter absolute maximum ratings t a =25c unless otherwise noted the AON4420L combines advanced trench mosfet technology with a small footprint package to provide low r ds(on) per unit area. this device is ideal for load switch and high speed switching applications. r ds(on) < 25m ? v ds (v) = 30v a t a =70c power dissipation a p d w t a =70c 1 t a =25c maximum junction-to-lead b steady-state c/w steady-state c/w maximum junction-to-ambient a g d s dfn 3x2 top view bottom view pin 1 g d d d s d d d n-channel enhancement mode field general description effect transistor features www.freescale.net.cn 1 / 5
symbol min typ max units bv dss 30 v 1 t j = 55c 5 i gss 100 na v gs(th) 1.4 1.9 2.5 v i d(on) 50 a 16 20 t j =125c 27 21 26 g fs 30 s v sd 0.75 1 v i s 3a c iss 440 550 660 pf c oss 80 110 140 pf c rss 35 55 80 pf r g 246 ? q g (10v) 8 9.8 12 nc q g (4.5v) 4 4.6 5.5 nc q gs 1.5 1.8 2.2 nc q gd 1.3 2.2 3 nc t d(on) 5ns t r 3.2 ns t d(off) 24 ns t f 6ns t rr 81114 ns q rr 11 13 16 nc output capacitance turn-on rise time turn-off delaytime v gs =10v, v ds =15v, r l =1.5 ? , r gen =3 ? turn-off fall time turn-on delaytime gate drain charge total gate charge (10v) v gs =10v, v ds =15v, i d =10a total gate charge (4.5v) i s = 1a,v gs = 0v v ds = 5v, i d = 10a switching parameters gate source charge dynamic parameters maximum body-diode continuous current gate resistance v gs =0v, v ds =0v, f=1mhz v gs =0v, v ds =15v, f=1mhz input capacitance m ? r ds(on) static drain-source on-resistance forward transconductance v gs = 4.5v, i d = 8a diode forward voltage i dss a gate threshold voltage v ds = v gs i d = 250 a v ds = 30v, v gs = 0v v ds = 0v, v gs = 20v zero gate voltage drain current gate-body leakage current electrical characteristics (t j =25c unless otherwise noted) static parameters parameter conditions body diode reverse recovery time body diode reverse recovery charge i f =10a, di/dt=300a/ s drain-source breakdown voltage on state drain current i d = 250 a, v gs = 0v v gs = 10v, v ds = 5v v gs = 10v, i d = 10a reverse transfer capacitance i f =10a, di/dt=300a/ s a: the value of r ja is measured with the device mounted on 1in 2 fr-4 board with 2oz. copper, in a still air environment with t a = 25c. the value in any given application depends on the user's specific board design. b: repetitive rating, pulse width limited by junction temperature. c. the r ja is the sum of the thermal impedence from junction to lead r jl and lead to ambient. d. the static characteristics in figures 1 to 6 are obtained using t 300 s pulses, duty cycle 0.5% max. e. these tests are performed with the device mounted on 1 in 2 fr-4 board with 2oz. copper, in a still air environment with t a =25c. the soa curve provides a single pulse rating. f. the current rating is based on the t 10s thermal resistance rating. rev0: july 2008 AON4420L n-channel enhancement mode field effect transistor www.freescale.net.cn 2 / 5
typical electrical and thermal characteristic s i f =-6.5a, di/dt=100a/ s this product has been designed and qualified for the consumer market. applications or uses as critical components in life support devices or systems are not authorized. aos does not assume any liability arisin g out of such applications or uses of its products. aos reserves the right to improve product design, functions and reliability without notice. 0 10 20 30 40 50 012345 v ds (volts) figure 1: on-region characteristics i d (a) 4v 1 0 v 3.5v 0 10 20 30 40 50 012345 v gs (volts) figure 2: transfer characteristics i d (a) 25c 125c v ds =5v 10 15 20 25 30 0246810 i d (a) figure 3: on-resistance vs. drain current and gate voltage r ds(on) (m ? ) v gs =10v v gs =4.5v 1e-06 1e-05 1e-04 1e-03 1e-02 1e-01 1e+00 1e+01 1e+02 0.0 0.2 0.4 0.6 0.8 1.0 1.2 v sd (volts) figure 6: body-diode characteristics i s (a) 25c 125c 0.8 1.0 1.2 1.4 1.6 1.8 -50 0 50 100 150 200 temperature (c) figure 4: on-resistance vs. junction temperature normalized on-resistance 10 20 30 40 50 60 246810 v gs (volts) figure 5: on-resistance vs. gate-source voltage r ds(on) (m ? ) i d =10a 25c 125c v gs =3v v gs =10v i d =10a v gs =4.5v i d =8a 4.5v AON4420L n-channel enhancement mode field effect transistor www.freescale.net.cn 3 / 5
typical electrical and thermal characteristic s i f =-6.5a, di/dt=100a/ s this product has been designed and qualified for the consumer market. applications or uses as critical components in life support devices or systems are not authorized. aos does not assume any liability arisin g out of such applications or uses of its products. aos reserves the right to improve product design, functions and reliability without notice. 0 2 4 6 8 10 0246810 q g (nc) figure 7: gate-charge characteristics v gs (volts) 0 200 400 600 800 0 5 10 15 20 25 30 v ds (volts) figure 8: capacitance characteristics capacitance (pf) c iss c oss c rss 1 10 100 1000 0.00001 0.001 0.1 10 1000 pulse width (s) figure 10: single pulse power rating junction- to-ambient (note e) power (w) 0.001 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 pulse width (s) figure 11: normalized maximum transient thermal impedance(note e) z ja normalized transient thermal resistance 0.01 0.1 1 10 100 0.1 1 10 100 v ds (volts) i d (amps) figure 9: maximum forward biased safe operating area (note e) 100 s 1 0 m s 1ms 100ms 1 0s d c r ds(on) limited t j(max) =150c t a =25c 10 s v ds =15v i d =10a single pulse d=t on /t t j,pk =t a +p dm .z ja .r ja r ja =80c/w t o n t p d in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse t j(max) =150c t a =25c AON4420L n-channel enhancement mode field effect transistor www.freescale.net.cn 4 / 5
- + vdc ig vds dut - + vdc vgs vgs 10v qg qgs qgd charge gate charge test circuit & waveform ig vgs - + vdc dut l vgs vds isd isd diode recovery test circuit & waveforms vds - vds + i f di/dt i rm rr vdd vdd q = - idt t rr - + vdc dut vdd vgs vds vgs rl rg vgs vds 10% 90% resistive switching test circuit & waveforms tt r d(on) t on t d(off) t f t off AON4420L n-channel enhancement mode field effect transistor www.freescale.net.cn 5 / 5
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